/TechnicalInformation IGBT- IGBT-modules IGBT- FP50R12KE3 /IGBT,Inverter /MaximumRatedValues Collector-emittervoltage Tvj = 25C VCES DC ContinuousDCcollectorcurrent TC = 80C, Tvj max = 150C TC = 25C, Tvj max = 150C IC nom IC 50 75 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 100 A Totalpowerdissipation TC = 25C, Tvj max = 150 Ptot 280 W Gate-emitterpeakvoltage VGES +/-20 V /CharacteristicValues min. Collector-emittersaturationvoltage IC = 50 A, VGE = 15 V IC = 50 A, VGE = 15 V Gatethresholdvoltage IC = 2,00 mA, VCE = VGE, Tvj = 25C Gatecharge Tvj = 25C Tvj = 125C V 1200 VCE sat A A typ. max. 1,70 2,00 2,15 V V VGEth 5,0 5,8 6,5 V VGE = -15 V ... +15 V QG 0,47 C Internalgateresistor Tvj = 25C RGint 4,0 Inputcapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 3,50 nF Reversetransfercapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,13 nF Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Turn-ondelaytime,inductiveload IC = 50 A, VCE = 600 V VGE = 15 V RGon = 18 Tvj = 25C Tvj = 125C td on 0,09 0,09 s s Risetime,inductiveload IC = 50 A, VCE = 600 V VGE = 15 V RGon = 18 Tvj = 25C Tvj = 125C tr 0,03 0,05 s s Turn-offdelaytime,inductiveload IC = 50 A, VCE = 600 V VGE = 15 V RGoff = 18 Tvj = 25C Tvj = 125C td off 0,42 0,52 s s Falltime,inductiveload IC = 50 A, VCE = 600 V VGE = 15 V RGoff = 18 Tvj = 25C Tvj = 125C tf 0,07 0,09 s s Turn-onenergylossperpulse IC = 50 A, VCE = 600 V, LS = 45 nH VGE = 15 V RGon = 18 Tvj = 25C Tvj = 125C Eon 4,90 6,60 mJ mJ Turn-offenergylossperpulse IC = 50 A, VCE = 600 V, LS = 45 nH VGE = 15 V RGoff = 18 Tvj = 25C Tvj = 125C Eoff 4,00 5,80 mJ mJ SCdata VGE 15 V, VCC = 900 V VCEmax = VCES -LsCE *di/dt ISC Thermalresistance,junctiontocase IGBT/perIGBT RthJC 0,45 K/W Temperatureunderswitchingconditions Tvj op -40 125 preparedby:AS dateofpublication:2013-10-02 approvedby:RS revision:3.1 1 tP 10 s, Tvj = 125C 200 A C /TechnicalInformation IGBT- IGBT-modules FP50R12KE3 Diode/Diode,Inverter /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C DC ContinuousDCforwardcurrent Repetitivepeakforwardcurrent tP = 1 ms It-value VR = 0 V, tP = 10 ms, Tvj = 125C VRRM 1200 V IF 50 A IFRM 100 A It 690 As /CharacteristicValues min. typ. max. 1,65 1,65 2,15 Forwardvoltage IF = 50 A, VGE = 0 V IF = 50 A, VGE = 0 V Tvj = 25C Tvj = 125C Peakreverserecoverycurrent IF = 50 A, - diF/dt = 1200 A/s (Tvj=125C) VR = 600 V VGE = -15 V Tvj = 25C Tvj = 125C IRM 51,0 50,0 A A Recoveredcharge IF = 50 A, - diF/dt = 1200 A/s (Tvj=125C) VR = 600 V VGE = -15 V Tvj = 25C Tvj = 125C Qr 6,20 12,0 C C Reverserecoveryenergy IF = 50 A, - diF/dt = 1200 A/s (Tvj=125C) VR = 600 V VGE = -15 V Tvj = 25C Tvj = 125C Erec 2,10 4,40 mJ mJ VF V V Thermalresistance,junctiontocase /Diode/perdiode RthJC 0,75 K/W Temperatureunderswitchingconditions Tvj op -40 125 C Diode/Diode,Rectifier /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C VRRM 1600 V /chip MaximumRMSforwardcurrentperchip TC = 80C IFRMSM 80 A MaximumRMScurrentatrectifieroutput TC = 80C IRMSM 115 A Surgeforwardcurrent tp = 10 ms, Tvj = 25C tp = 10 ms, Tvj = 150C IFSM 500 400 A A It-value tp = 10 ms, Tvj = 25C tp = 10 ms, Tvj = 150C It 1250 800 As As /CharacteristicValues min. typ. max. VF 1,00 V Tvj = 150C VTO 0,80 V Sloperesistance Tvj = 150C rT 6,00 m Reversecurrent Tvj = 150C, VR = 1600 V IR 3,00 mA Thermalresistance,junctiontocase /Diode/perdiode RthJC Temperatureunderswitchingconditions Tvj op preparedby:AS dateofpublication:2013-10-02 approvedby:RS revision:3.1 Forwardvoltage Tvj = 150C, IF = 50 A Thresholdvoltage 2 0,65 K/W C /TechnicalInformation IGBT- IGBT-modules FP50R12KE3 IGBT-/IGBT,Brake-Chopper /MaximumRatedValues Collector-emittervoltage Tvj = 25C VCES DC ContinuousDCcollectorcurrent TC = 80C, Tvj max = 150C TC = 25C, Tvj max = 150C IC nom IC 40 55 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 80 A Totalpowerdissipation TC = 25C, Tvj max = 150 Ptot 210 W Gate-emitterpeakvoltage VGES +/-20 V /CharacteristicValues min. Collector-emittersaturationvoltage IC = 40 A, VGE = 15 V IC = 40 A, VGE = 15 V Gatethresholdvoltage IC = 1,50 mA, VCE = VGE, Tvj = 25C Gatecharge Tvj = 25C Tvj = 125C V 1200 VCE sat A A typ. max. 1,80 2,15 2,30 V V VGEth 5,0 5,8 6,5 V VGE = -15 V ... +15 V QG 0,33 C Internalgateresistor Tvj = 25C RGint 6,0 Inputcapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 2,50 nF Reversetransfercapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,09 nF Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Turn-ondelaytime,inductiveload IC = 40 A, VCE = 600 V VGE = 15 V RGon = 27 Tvj = 25C Tvj = 125C td on 0,09 0,09 s s Risetime,inductiveload IC = 40 A, VCE = 600 V VGE = 15 V RGon = 27 Tvj = 25C Tvj = 125C tr 0,03 0,05 s s Turn-offdelaytime,inductiveload IC = 40 A, VCE = 600 V VGE = 15 V RGoff = 27 Tvj = 25C Tvj = 125C td off 0,42 0,52 s s Falltime,inductiveload IC = 40 A, VCE = 600 V VGE = 15 V RGoff = 27 Tvj = 25C Tvj = 125C tf 0,07 0,09 s s Turn-onenergylossperpulse IC = 40 A, VCE = 600 V, LS = t.b.d. nH VGE = 15 V RGon = 27 Tvj = 25C Tvj = 125C Eon 4,10 6,00 mJ mJ Turn-offenergylossperpulse IC = 40 A, VCE = 600 V, LS = t.b.d. nH VGE = 15 V RGoff = 27 Tvj = 25C Tvj = 125C Eoff 3,10 4,20 mJ mJ SCdata VGE 15 V, VCC = 900 V VCEmax = VCES -LsCE *di/dt ISC Thermalresistance,junctiontocase IGBT/perIGBT RthJC 0,60 K/W Temperatureunderswitchingconditions Tvj op -40 125 preparedby:AS dateofpublication:2013-10-02 approvedby:RS revision:3.1 3 tP 10 s, Tvj = 125C 160 A C /TechnicalInformation IGBT- IGBT-modules FP50R12KE3 Diode/Diode,Brake-Chopper /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C DC ContinuousDCforwardcurrent Repetitivepeakforwardcurrent tP = 1 ms It-value VR = 0 V, tP = 10 ms, Tvj = 125C VRRM 1200 V IF 15 A IFRM 30 A It 60,0 As /CharacteristicValues min. typ. max. 1,65 1,65 2,15 Forwardvoltage IF = 15 A, VGE = 0 V IF = 15 A, VGE = 0 V Tvj = 25C Tvj = 125C Peakreverserecoverycurrent IF = 15 A, - diF/dt = 400 A/s (Tvj=125C) VR = 600 V Tvj = 25C Tvj = 125C IRM 16,0 15,0 A A Recoveredcharge IF = 15 A, - diF/dt = 400 A/s (Tvj=125C) VR = 600 V Tvj = 25C Tvj = 125C Qr 1,80 3,00 C C Reverserecoveryenergy IF = 15 A, - diF/dt = 400 A/s (Tvj=125C) VR = 600 V Tvj = 25C Tvj = 125C Erec 0,55 1,10 mJ mJ Thermalresistance,junctiontocase /Diode/perdiode RthJC 1,50 K/W Temperatureunderswitchingconditions Tvj op -40 125 min. typ. max. R25 5,00 k R/R -5 5 % P25 20,0 mW VF V V C NTC-/NTC-Thermistor /CharacteristicValues Ratedresistance TC = 25C R100 DeviationofR100 TC = 100C, R100 = 493 Powerdissipation TC = 25C B- B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B- B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 t.b.d. K B- B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 t.b.d. K Specificationaccordingtothevalidapplicationnote. preparedby:AS dateofpublication:2013-10-02 approvedby:RS revision:3.1 4 /TechnicalInformation IGBT- IGBT-modules FP50R12KE3 /Module Isolationtestvoltage RMS, f = 50 Hz, t = 1 min Materialofmodulebaseplate Internalisolation (1,IEC61140) basicinsulation(class1,IEC61140) Creepagedistance VISOL 2,5 kV Cu AI203 -/terminaltoheatsink -/terminaltoterminal 10,0 mm Clearance -/terminaltoheatsink -/terminaltoterminal 7,5 mm Comperativetrackingindex CTI > 225 Thermalresistance,casetoheatsink //permodule Paste=1W/(m*K)/grease=1W/(m*K) Strayinductancemodule Moduleleadresistance,terminals-chip TC=25C,//perswitch Storagetemperature min. typ. RthCH 0,009 LsCE 60 nH RCC'+EE' RAA'+CC' 4,00 2,00 m Tstg -40 125 C M5 ScrewM5-Mountingaccordingtovalidapplicationnote M 3,00 - 6,00 Nm Weight G 300 g preparedby:AS dateofpublication:2013-10-02 approvedby:RS revision:3.1 Mountingtorqueformodulmounting 5 max. K/W /TechnicalInformation IGBT- IGBT-modules FP50R12KE3 IGBT- (Typical) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V IGBT- (Typical) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=125C 100 100 Tvj = 25C Tvj = 125C 80 80 70 70 60 60 50 40 30 30 20 20 10 10 0,0 0,5 1,0 1,5 2,0 VCE [V] 2,5 3,0 0 3,5 IGBT- (Typical) transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 80 90 100 20 Tvj = 25C Tvj = 125C 90 70 14 60 12 E [mJ] 16 50 10 40 8 30 6 20 4 10 2 5 6 7 Eon, Tvj = 125C Eoff, Tvj = 125C 18 80 0 0,0 IGBT- (Typical) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=15V,RGon=18,RGoff=18,VCE=600V 100 IC [A] 50 40 0 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 90 IC [A] IC [A] 90 8 9 VGE [V] 10 11 0 12 preparedby:AS dateofpublication:2013-10-02 approvedby:RS revision:3.1 6 0 10 20 30 40 50 60 IC [A] 70 /TechnicalInformation IGBT- IGBT-modules FP50R12KE3 IGBT- (Typical) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=15V,IC=50A,VCE=600V IGBT- transientthermalimpedanceIGBT,Inverter ZthJC=f(t) 12 1 Eon, Tvj = 125C Eoff, Tvj = 125C ZthJC : IGBT 10 ZthJC [K/W] E [mJ] 8 6 0,1 4 2 0 i: 1 2 3 4 ri[K/W]: 0,05077 0,2032 0,1142 0,07893 i[s]: 0,002345 0,0282 0,1128 0,282 0 5 10 15 20 RG [] 25 30 35 0,01 0,001 40 IGBT- RBSOA) reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=15V,RGoff=18,Tvj=125C 0,01 0,1 t [s] 1 10 Diodetypical) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 120 100 IC, Modul IC, Chip Tvj = 25C Tvj = 125C 90 100 80 70 80 IF [A] IC [A] 60 60 50 40 40 30 20 20 10 0 0 200 400 600 800 VCE [V] 1000 1200 0 1400 0,0 0,5 1,0 1,5 VF [V] preparedby:AS dateofpublication:2013-10-02 approvedby:RS revision:3.1 7 2,0 2,5 /TechnicalInformation IGBT- IGBT-modules FP50R12KE3 Diode(Typical) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=18,VCE=600V Diode(Typical) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=50A,VCE=600V 8 8 Erec, Tvj = 125C 7 7 6 6 5 5 E [mJ] E [mJ] Erec, Tvj = 125C 4 4 3 3 2 2 1 1 0 0 10 20 30 40 50 60 IF [A] 70 80 90 0 100 Diode transientthermalimpedanceDiode,Inverter ZthJC=f(t) 0 5 10 15 20 RG [] 25 30 35 40 Diode) forwardcharacteristicofDiode,Rectifier(typical) IF=f(VF) 1 100 ZthJC : Diode Tvj = 25C Tvj = 150C 90 80 70 IF [A] ZthJC [K/W] 60 0,1 50 40 30 20 i: 1 2 3 4 ri[K/W]: 0,07637 0,4933 0,1421 0,04501 i[s]: 0,003333 0,03429 0,1294 0,7662 0,01 0,001 0,01 0,1 t [s] 1 10 0 10 0,4 0,6 0,8 1,0 VF [V] preparedby:AS dateofpublication:2013-10-02 approvedby:RS revision:3.1 8 1,2 1,4 /TechnicalInformation IGBT- IGBT-modules FP50R12KE3 IGBT-(Typical) outputcharacteristicIGBT,Brake-Chopper(typical) IC=f(VCE) VGE=15V Diodetypical) forwardcharacteristicofDiode,Brake-Chopper(typical) IF=f(VF) 80 80 Tvj = 25C Tvj = 125C 70 60 60 50 50 IF [A] IC [A] 70 40 40 30 30 20 20 10 10 0 0,0 0,5 1,0 1,5 2,0 VCE [V] 2,5 3,0 0 3,5 NTC- NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 100000 Rtyp R[] 10000 1000 100 0 20 40 Tvj = 25C Tvj = 125C 60 80 100 TC [C] 120 140 160 preparedby:AS dateofpublication:2013-10-02 approvedby:RS revision:3.1 9 0,0 0,5 1,0 1,5 2,0 VF [V] 2,5 3,0 3,5 4,0 /TechnicalInformation IGBT- IGBT-modules FP50R12KE3 /circuit_diagram_headline /packageoutlines In fineon preparedby:AS dateofpublication:2013-10-02 approvedby:RS revision:3.1 10 /TechnicalInformation IGBT- IGBT-modules FP50R12KE3 (www.infineon.com) Terms&Conditionsofusage Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch application. 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