DS30250 Rev. 5 - 2 1 of 3 BC846AW - BC848CW
www.diodes.com ã Diodes Incorporated
BC846AW - BC848CW
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
Maximum Ratings @ TA= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage BC846
BC847
BC848
VCBO
80
50
30
V
Collector-Emitter Voltage BC846
BC847
BC848
VCEO
65
45
30
V
Emitter-Base Voltage BC846, BC847
BC848 VEBO 6.0
5.0 V
Collector Current IC100 mA
Peak Collector Current ICM 200 mA
Peak Emitter Current IEM 200 mA
Power Dissipation (Note 1) Pd200 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 625 °C/W
Operating and Storage Temperature Range Tj,T
STG -65 to +150 °C
·Ideally Suited for Automatic Insertion
·Complementary PNP Types Available
(BC856W-BC858W)
·For Switching and AF Amplifier Applications
·Also Available in Lead Free Version
Marking Code (Note 2)
Type Marking Type Marking
BC846AW K1Q BC847CW K1M
BC846BW K1R BC848AW K1J, K1E, K1Q
BC847AW K1E, K1Q BC848BW K1K, K1F, K1R
BC847BW K1F, K1R BC848CW K1L, K1M
·Case: SOT-323, Molded Plastic
·Case material - UL Flammability Rating
Classification 94V-0
·Moisture sensitivity: Level 1 per J-STD-020A
·Terminals: Solderable per MIL-STD-202,
Method 208
·Also Available in Lead Free Plating (Matte Tin
Finish). Please see Ordering Information,
Note 5, on Page 2
·Pin Connections: See Diagram
·Marking Codes (See Table Below & Diagram
on Page 2)
·Ordering & Date Code Information: See Page 2
·Approx. Weight: 0.006 grams
Mechanical Data
A
M
JL
FD
BC
H
K
G
BE
C
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Current gain subgroup “C” is not available for BC846W.
SOT-323
Dim Min Max
A0.25 0.40
B1.15 1.35
C2.00 2.20
D0.65 Nominal
E0.30 0.40
G1.20 1.40
H1.80 2.20
J0.0 0.10
K0.90 1.00
L0.25 0.40
M0.10 0.18
a0°8°
All Dimensions in mm
SPICE MODELS: BC846AW BC846BW BC846CW BC847AW BC847BW BC847CW BC848AW BC848BW BC848CW
DS30250 Rev. 5 - 2 2 of 3 BC846AW - BC848CW
www.diodes.com
Electrical Characteristics @ TA= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage (Note 3) BC846
BC847
BC848
V(BR)CBO
80
50
30
—
—
—
—
—
—
VIC = 10mA, IB = 0
Collector-Emitter Breakdown Voltage (Note 3) BC846
BC847
BC848
V(BR)CEO
65
45
30
—
—
—
—
—
—
VIC = 10mA, IB = 0
Emitter-Base Breakdown Voltage BC846, BC847
(Note 3) BC848 V(BR)EBO 6
5—— V
IE = 1mA, IC = 0
DC Current Gain Current Gain Group A
B
(Note 3) C
hFE
110
200
420
180
290
520
220
450
800
—VCE = 5.0V, IC = 2.0mA
Collector-Emitter Saturation Voltage (Note 3) VCE(SAT) —90
200
250
600 mV IC= 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Saturation Voltage (Note 3) VBE(SAT) —700
900 —mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Voltage (Note 3) VBE(ON) 580
—
660
—
700
770 mV VCE = 5.0V, IC = 2.0mA
VCE = 5.0V, IC = 10mA
Collector-Cutoff Current (Note 3) ICBO
ICBO
—
—
—
—
15
5.0
nA
µA
VCB = 30V
VCB = 30V, TA = 150°C
Gain Bandwidth Product fT100 300 — MHz VCE = 5.0V, IC = 10mA,
f = 100MHz
Collector-Base Capacitance CCBO — 3.0 4.5 pF VCB = 10V, f = 1.0MHz
Noise Figure NF — — 10 dB
VCE = 5V, IC = 200µA,
RS = 2.0kW,
f = 1.0kHz, Df = 200Hz
XXX = Product Type Marking Code (See Page 1), e.g. K1Q = BC846AW
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
XXX
YM
Marking Information
Notes: 3. Short duration pulse test to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
*xx = device type, e.g. BC846AW-7.
5. For Lead Free version (with Lead Free terminal finish) part number, please add "-F" suffix to part number above.
Example: BC846AW-7-F.
Device Packaging Shipping
BC84xxW-7* SOT-323 3000/Tape & Reel
Ordering Information (Note 4)
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
Year 1998 1999 2000 2001 2002 2003 2004
Code JKLM N PR
Date Code Key
DS30250 Rev. 5 - 2 3 of 3 BC846AW - BC848CW
www.diodes.com
0
50
100
25 50 75 100 125 150 175 200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1, Max Power Dissipation vs
Ambient Tem
p
erature
150
200
250
300
01
0.1 10 100 1000
V , COLLECTOR TO EMITTER
CE(SAT)
SATURATION VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Fig. 2 Collector Emitter Saturation Voltage
vs. Collector Current
T=25°C
A
T = -50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0
.4 IC
IB
=20
1
100
10
1000
1 10 100
f , GAIN BANDWIDTH PRODUCT (MHz)
T
I , COLLECTOR CURRENT (mA)
C
Fi
g
. 4, Gain Bandwidth Product vs Collector Current
V= 5V
CE
1
10
100
1000
110 100 1000
h , DC CURRENT GAIN
FE
I , COLLECTOR CURRENT (mA)
C
Fi
g
. 3, DC Current Gain vs. Collector Current
T = 25°C
A
T = -50°C
A
T = 150°C
A
