SAMSUNG SEMICONDUCTOR INC hue D0 Bf zqe4i42 oo02289 38 I MMBTAO6 - NPN EPITAXIAL SILICON TRANSISTOR V- 29-19 DRIVER TRANSISTOR 4 SOT-23 ABSOLUTE MAXIMUM RATINGS (T.=25C) Characteristic Symbol | Rating | Unit Collector-Base Voltage Veso 80 Vv Collector-Emitter Voltage Veceo 80 v Emitter-Base Voltage Veo 4 v Collector Current . le - 500 mA Collector Dissipation Po 350 mw Storage Temperature Tstg 150 C Thermal Resistance Junction to Ambient Rth(-a) 357 C/W + Refer to MPSAOS5 for graphs 1. Base 2. Emitter 3. Cottector ELECTRICAL CHARACTERISTICS (T,=25C) Characteristic Symbol Test Condition Min Max Unit *Collector-Emitter Breakdown Voltage BVceo ic=1mA, Ip=O 80 Vv Emitter-Base Breakdown Voltage BV eso (E=100pA, Ic =O 4 Vv Collector Cutoff Current Icsa Vca=80V, le=O 0.1 HA Collector Cutoff Current Iceo Vce=60V, Ig=O 0.1 pA DC Current Gain Here Vee=1V, lc=10mA 50 Vee=1V, le=100MA 50 Collector-Emitter Saturation Voltage Voce (sat) lc =100mA, Ig=10mA 0.25 Vv Base-Emitter On Voltage Vee (on) Vce=1V, Ic=100mA 1.2 Vv Current Gain-Bandwidth Product fy Vee=2V, lo=10mA, f=tOOMHz 100 MHz * Pulse Test: PWS300us, Duty Cycles2% Marking am . 1G tS cd ce SAMSUNG SEMICONDUCTOR 559 pecan emis ee ert