BCP5616Q
Datasheet Number: DS36981 Rev. 4 - 2
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BCP5616Q
80V NPN MEDIUM POWER TRANSISTOR IN SOT223
Description
This Bipolar Junction Transistor (BJT) is designed to meet the
stringent requirements of Automotive Applications.
Features
• BVCEO > 80V
• IC = 1A High Continuous Collector Current
• ICM = 2A Peak Pulse Current
• 2W Power Dissipation
• Low Saturation Voltage VCE(SAT) < 500mV @ 0.5A
• Complementary PNP Type: BCP5316Q
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen- and Antimony-Free. “Green” Device (Note 3)
• The BCP5616Q is suitable for automotive applications
requiring specific change control; this part is AEC-Q101
qualified, PPAP capable, and manufactured in IATF16949
certified facilities.
https://www.diodes.com/quality/product-definitions/
Applications
• Medium Power Switching or Amplification Applications
• AF Driver and Output Stages
Mechanical Data
• Case: SOT223
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin Plated Leads.
Solderable per MIL-STD-202, Method 208
• Weight: 0.112 grams (Approximate)
Ordering Information (Note 4)
Product
Compliance
Marking
Reel Size (inches)
Quantity per Reel
BCP5616QTA
Automotive
BCP 5616
7
1,000
BCP5616QTC
Automotive
BCP 5616
13
4,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
C
E
B
Device Symbol
Top View
SOT223
Top View
Pin-Out
BCP 5616 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 0 = 2020)
WW or WW = Week Code (01~53)
YWW
BCP
5616
SOT223
BCP5616Q
Datasheet Number: DS36981 Rev. 4 - 2
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BCP5616Q
Absolute Maximum Ratings (@ TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 5 V
Continuous Collector Current I
C
1 A
Peak Pulse Collector Current
I
CM
2
Continuous Base Current
IB
100
mA
Peak Pulse Base Current
IBM
200
Thermal Characteristics (@ TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 5)
PD
2
W
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
62 °C /W
Thermal Resistance, Junction to Leads (Note 6)
RθJL
19.4 °C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150 °C
ESD Ratings (Note 7)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge – Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge – Machine Model
ESD MM
400
V
C
Notes: 5. For a device mounted with the collector lead on 50mm x 50mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady-state.
6. Thermal resistance from junction to solder-point (at the end of the collector lead).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
BCP5616Q
Datasheet Number: DS36981 Rev. 4 - 2
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BCP5616Q
Thermal Characteristics and Derating Information
100µ 1m 10m 100m 110 100 1k
0
20
40
60
80
100
120
140
160
020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0 50mm x 50mm
1oz Cu
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 110 100 1k
0
10
20
30
40
50
60 50mm x 50mm 1oz Cu
T
amb = 25°C
Pulse Power Dissipation
Pulse Width (s)
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
50mm x 50mm 1oz Cu
T
amb = 25°C
Single pulse
Maximum Power (W)
BCP5616Q
Datasheet Number: DS36981 Rev. 4 - 2
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Electrical Characteristics (@ TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
100
—
—
V
IC = 100µA
Collector-Emitter Breakdown Voltage (Note 8) BVCEO 80 —
—
V IC = 10mA
Emitter-Base Breakdown Voltage BVEBO 5 — — V IE = 10µA
Collector Cut-Off Current ICBO — — 0.1
20 µA VCB = 30V
VCB = 30V, TA = +150°C
Emitter Cut-Off Current
IEBO
— — 20 nA
VEB = 4V
Static Forward Current Transfer Ratio (Note 8)
hFE
25
100
25
—
250
—
IC = 5mA, VCE = 2V
IC = 150mA, VCE = 2V
IC = 500mA, VCE = 2V
Collector-Emitter Saturation Voltage (Note 8)
VCE(sat)
— — 0.5 V
IC = 500mA, IB = 50mA
Base-Emitter Turn-On Voltage (Note 8)
VBE(on)
— — 1.0 V
IC = 500mA, VCE = 2V
Transition Frequency ft 100 150 — MHz IC = 50mA, VCE = 10V
f = 100MHz
Output Capacitance C
obo
— — 25 pF VCB = 10V, f = 1MHz
Note: 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
0
0.2
0.4
0.6
0.8
0 1 2 3 4 5
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
I , COLLECTOR CURRENT (A)
C
Fig. 1 Typical Collector Current
vs. Collector-Emitter Voltage
h, DC CURRENT GAIN
FE
Fig. 2 Typical DC Current Gain vs. Collector Current
0
50
100
150
200
250
0.001 0.01 0.1 110
I , COLLECTOR CURRENT (A)
C
BCP5616Q
Datasheet Number: DS36981 Rev. 4 - 2
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020 40 60 80 100
0
50
100
150
200
250
300
f
T
, GAIN BANDWIDTH PRODUCT (MHz)
I
c
, COLLECTOR CURRENT (mA)
Fig. 7 Typical Gain-bandwidth Product
vs. Collector Current
V
CE
= 5V
f = 100MHz
I , COLLECTOR CURRENT (A)
C
V
, BASE-EMITTER TURN-ON VOLTAGE (V)
BE(ON)
Fig. 3 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0
0.2
0.4
0.6
0.8
1.2
0.0001 0.001 0.01 0.1 110
1.0
I , COLLECTOR CURRENT (A)
C
V , COLLECTOR-EMITTER
SATURATION
CE(SAT)
VOLTAGE (V)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0
0.1
0.2
0.3
0.4
0.0001 0.001 0.01 0.1 110
I , COLLECTOR CURRENT (A)
C
V , BASE-EMITTER SATURATION VOLTAGE (V)
BE(SAT)
Fig. 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
0
0.2
0.4
0.6
0.8
1.0
1.2
0.0001 0.001 0.01 0.1 110
CAPACITANCE (pF)
V , REVERSE VOLTAGE (V)
R
Fig. 6 Typical Capacitance Characteristics
0
20
40
60
80
100
120
140
0.1 110 100
BCP5616Q
Datasheet Number: DS36981 Rev. 4 - 2
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BCP5616Q
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT223
SOT223
Dim
Min
Max
Typ
A
1.55
1.65
1.60
A1
0.010
0.15
0.05
b
0.60
0.80
0.70
b1
2.90
3.10
3.00
C
0.20
0.30
0.25
D
6.45
6.55
6.50
E
3.45
3.55
3.50
E1
6.90
7.10
7.00
e
–
–
4.60
e1
–
–
2.30
L
0.85
1.05
0.95
Q
0.84
0.94
0.89
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT223
Dimensions
Value (in mm)
C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60
Y1
1.60
Y2
8.00
A1
A
7°
7°
D
b
e
e1
b1
C
E1
L
0°-10°
Q
E
0.25
Seating
Plane
Gauge
Plane
X1
Y1
Y
XC
C1 Y2
BCP5616Q
Datasheet Number: DS36981 Rev. 4 - 2
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BCP5616Q
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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