0258354 ADVANCED SEMICONDUCTOR 82D 00 ADVANCED SEMICONDUCTOR SILICON POINT CONTACT MIXER DIODES AS! Point Contact Mixer Diodes are They feature high burnout resistance, low 063 D T-o7- ov ac DE Pp oasaasy QOO0O0b4 4 Tr designed for applications from UHF through noise figure and are hermetically sealed. 26 GHz. They are available in DO-7 DO-22,D0-23 from UHF to 26GHz. and DO-37 package styles which make them suitable for use in Coaxial, Waveguide BAND and Stripline applications. These diodes are available as matched pairs and are supplied in either forward pairs (M) or forward/reverse pairs (MR). The matching criteria for these mixer diodes is: 1. Conversion LossAL, = 0.30B These mixer diodes are categorized by noise figure at the designated test frequencies UHF L S C X Ku K FREQUENCY (GHz) Up to 1 1 to2 2to4 4ta8 8to 12.4 12.4 to 18.0 18.0 to 26.5 NOISE FIGURE TEST SCHEMATIC LOCAL OSCILLATOR 9.378 GHz POWER METER maximum HP432A 2. |, ImpedanceAZ,- = 25 OHMS maximum * 0-600B Fst The overall noise figure is expressed by the following relationship: CHOKE & DC RETURN NF, = L, (NR, + NF, 1) i Dut NF, = overall receiver noise figure -10.08 MW NR, = output noise temperature ratio of the wn Ll] mixer diode = NF, = noise figure of the .F amplifier (1.5dB) L, = conversion loss of the mixer diode pote PH] (7) (7) AA DETECTOR , 0.VM. NOISE FIGURE METER NOISE VSWR, Ze Ip HP 89704 SOURCE MEASUREMENT HP346B 01-18 GHz NOISE SOURCE DRIVE ee een aa ie a nate0258354 ADVANCED SEMICONDUCTOR "* "82D 00084 0 F2Q7-07_ ADVANCED SEMICONDUCTOR &c . ielpoceuse OODOObY & |_ = SS OS TYPICAL PERFORMANCE 5 NOISE FIGURE VS FREQUENCY +00 IF IMPEDANCE VS LO POWER | IF = 30 MHz 12s NFp= 1.508 475 20 A, = 22 OHMS 450 Pio= ImW f _ = 6.75 A g 495 Pa SJ = s 6.5 7 m1 400 g = 8 425 s 375 a * ~N 6.0 Ln 350 5.75 328 DN oN 55 300 1 3 5 7 9 no 8 1 W -10 -@ 6 4 2 49 2 4 G FREQUENCY (GH2} LO POWER LEVEL {d8m| NOISE FIGURE VS LO POWER o0 VSWR VS LOCAL OSCILLATOR POWER 8.0 \ 78 \ 46 \ \ Fig = 9.975 GHz 4 \ Ay = 22 OHMS : 16 oa Ss oy s S @ 72 S fey 2 = 3 B = = 20 | \ f 14 N 68 \ 12 66 Nn NU 64 = 10 0 8 6 4 2 0 2 4 6 on a 10 100 10 POWER LEVEL (dBm) LOCAL OSCILLATOR POWER (mW)0258354 ADVANCED SEMICONDUCTOR ~ 82D 00065 D T-017-07 a2 DE Ppoesaasy gooo00b5 B TU ADVANCED SEMICONDUCTOR POINT CONTACT MIXER DIODES L, S, -BAND TYPE NUMBER NOISE AEQUENCY POLARITY MATCHED PAIRS NOISE NOISE BAND TWO FORWARD | ee eee | RATIO FIGURE FORWARD REVERSE REVERSIBLE POLARITY MAX N, dB DIODES POLARITY MAX. DIODES L IN25 IN25R IN25M IN25MR 20 12.6 Ll IN25A IN25AR IN25AM IN25AMR 20 10.3 l IN25B IN25BR IN25BM IN25BMR 15 83 = = S IN21C INZICR INZICM INZICMR 15 83 = = s 1N4294 IN4294R 1NA294M IN4294MR fz = S IN4I6C INAI6CM INAIGCMR 16 83 a S 1NB3I INB31M 15 83 = S IN3655 INS655M 15 83 OS $ 1N210 INZIDR IN21DM IN21DMR 13 73 I wee 5 IN416D INAIGDM IN4IGDMR 13 73 J S INDIE INZIER INZIEM INZIEMR 70 a $+ ss S IN4I6E INAIGEM IN4IBEMR 70 s IN2IWE INZIWEM INZIWEMR 7.0 S INB3IA INB3IAM 7.0 s INSB5EA INS6554M | IN3655AMR 15 70 S INZIF INZIFR IN2IFM INZIFMR 60 s INAIBE IN4I6FM INAIGEMA 6.0 s IN3655B IN3655BM | IN3655BMR 15 60 ae S INB3IB INB3IBM 65 = : = S INBSIC INB3ICM 6.0 _ = S IN21G IN2IGR IN21GM INZIGMR 55 a * . = s IN416C IN4I6GM INAIBGMR 5.5 i = $ INZIWG INZIWGM IN21WGMR 5.5 _ = s IN2IH INZIHR IN2THM INZTHMR 5.0 ma = S IN416H IN4I16HM INAIBHMR 5.0 = = C IN150 INT5OR INT50M INISOMR 20 98 ma = C IN160 INT6OR INIGOM INIBOMR 27 1140258354 ADVANCED SEMICONDUCTOR = = ~ 82D 00066 =D 7-97-0777 === = ADVANCED SEMICONDUCTOR a2 ve 0258354 OOOOObL O [== ELECTRICAL CHARACTERISTICS > TEST CONDITIONS BURNOUT alas VSWR COMES ON | FREQUENCY POWER BASIC Cee ERGS MAX Mau Mie a TYPE min | MAX 6.54 100 | 400 8.0 1000 1.25 N25 00-22 6.54 100 | 300 6.5 1000 1.25 IN25A 00-22 6.5! 100 | 300 5.5 1000 1.25 IN25B 00-22 20 300 | 500 5.5 3060 05 IN2IC 00-22 5.5 3060 05 wnazga | 00-22 20 300 | 500 5.5 3060 05 INAIBC 00-23 20 300 | 500 5.5 3060 05 INB3I 00-7 10.0 300 | 500 _ 5.5 3060 05 1N3655 00-23 20 325 | 475 15 5.0 3060 05 N21 00-22 20 325 | 475 15 5.0 3060 05 IN4160 00.23 5.0 350 | 450 13 3060 05 INZIE 00.22 5.0 350 | 450 13 3060 05 INAIBE 00-23 5.0 350 | 450 13 3060 05 INZIWE 00.23 = 300 | 500 _ 3060 05 1NB31 00-7 = 10.0 350 | 450 1.3 5.5 3060 05 INB55A 00.23 = 5.0 350 | 450 13 - 3060 0.5 IN2IF 00-22 5.0 350 | 450 13 _ 3060 05 INAI6F 00-23 10.0 350 | 450 13 5.5 3060 05 N3655B 00.23 5.0 300 | 500 _ 3060 05 IN831B 00.7 5.0 300 | 500 _ _ 3060 a5 -| 1Ne3tC 00-7 5.0 350 | 450 1.3 - 3060 08 IN21G 00-22 5.0 350 | 450 13 - 3060 05 INAI6G 00-23 5.0 350 | 450 13 _ 3060 05 INZIWG 00-23 5.0 350 | 450 13 _ 3060 05 IN2IH 00-22 5.0 350 | 450 13 3060 a5. | INAIGH 00-23 1.0 200 | 500 15 6.0 6750 10 INI5O 00-22 1.0 200 | 500 6.5 6750 1.0 INTO 00-220258354 ADVANCED SEMICONDUCTOR . . 4 ADVANCED SEMICONDUCTOR POINT CONTACT MIXER DIODES 82D 00067 D 7.07.07 a2 pe ffozsaasy Ooo0o0b7 1 i X-BAND TYPE NUMBER NOISE FREQUENCY POLARITY MATCHED oa ose NOISE! BAND TWO FORWARD | owe peveRse RATIO FIGURE FORWARD REVERSE REVERSIBLE POLARITY POLARITY MAX. Hid DIODES x INZ3C INZ3CR IN23CM INZ3CMR 20 9.5 x IN415C IN415CM IN415CMR 20 9.5 x 1NB32Z IN632M 20 9.5 x 1N2510 IN2510R 1N2510M IN2510MR 20 9.5 x 1N3745 IN3745M IN3745MR 95 x 1N3746 IN3746M IN3746MR 8.5 x IN149 INI49R INI49M INI49MR 15 8.3 x 1N23D IN230R IN230M IN230MR 17 78 x ~ 1NAI5D IN415DM IN416DMR 1.7 78 x IN23E IN23ER INZ3EM IN23EMR 75 x IN23WE IN23WEM INZ3WEMR ~ 75 x IN415E IN415EM IN415EMR 75 x INB32A - | INB32AM 76 x 1N3747W IN3747WM | INS7A7WMR 75 x INZ3F INZ3FR IN23FM IN23FMR 7.0 x IN23WF INZ3WFM INZ3WFMR 7.0 x IN4I5F IN4I5FM IN4I6FMR - 70 x 1N832B 1N632BM _ 7.0 x IN236 IN236R 1N23GM IN236MR 6.5 x IN23WG IN23WGM IN23WGMR 6.5 x 1N4516 IN4I5GM IN4156MR 6.5 x 1NB32C INB32CM 6.5 x INZ3H IN23HR IN23HM INZ3HMR 6.0 x IN415H IN451HM IN415HMR 6.0zz 9258354 ADVANCED SEMICONDUCTOR ADVANCED SEMICONDUCTOR Az vel 0258354 oooooba 3 i 820 00068 D 797-07 ELECTRICAL CHARACTERISTICS TEST CONDITIONS BURNOUT aus VSWR CONMERSION | FREQUENCY PaWER BASIC FINE ERGS MAX Mie 4B MHe qm TYPE MIN | MAX 20 325 | 475 15 60 9375 1.0 nzaC 00-22 20 325 | 475 15 6.0 9376 10 In4I5C 00.23 20 250 | 550 _ 6. 9375 1.0 1ng32 00-7 os 20 300 | 500 ~ 60 9375 1.0 1N2510 00.37 a 20 325 | 475 15 ~ 9975 1.0 IN37A5 00.23 5.0 335 | 465 13 9375 1.0 INgH46 00-23 20 325 | 475 - 5.5 9375 1.0 In149 00.22 20 350 | 450 13 50 9375 1.0 1N230 00.22 = 20 350 | 450 13 50 9376 10 14150 00-23 20 935 | 465 13 ~ 9375 1.0 IN23E 00-22 20 335 | 465 13 9375 1.0 INZ3WE 00-23 20 335 | 465 13 - 9376 1.0 INAIGE 00-23 20 250 | 560 - 9376 1.0 INB32A 00-7 5.0 335 | 465 13 - 9376 1.0 INSTATW 00.23 20 335 | 465 13 - 9975 10 INZ3F 00-22 20 335 | 465 13 - 9375 1.0 IN23WE 00-23 20 935 | 465 13 ~ 9375 1.0 INAS 00-23 20 250 | 560 _ 9375 1.0 1N632B 00.7 20 335 | 465 13 ~ 9375 1.0 1N236 0-22 20 935 | 465 13 9375 1.0 Inz3G 00-23 20 335 | 465 13 - 9375 1.0 1n4 166 00-23 20 250 | 560 - - 9375 1.0 neg2c 00-7 20 335 | 465 13 a 9375 10 INZ3H 00-22 20 335 | 465 13 9375 1.0 1N4 15H 00-230258354 ADVANCED SEMICONDUCTOR ' 82D 00069 OD T07-07 ADVANCED SEMICONDUCTOR 2 DE Pf oasaasy gg000b4 & 7 POINT CONTACT MIXER DIODES Ku, K-BAND TYPE NUMBER NOISE sneouENcy POLARITY MATCHED PAIRS Nose! BAND Two ronwano | ONEFORWARD | Pr FIGURE FORWARD Revense | REVERSIBLE | POLARITY MAX N, dB POLARITY ian DIODES DIODES Ku N78 IN7OR IN78M IN7BMR 25 - ku IN7BA IN7BAR IN7BAM IN7BAMR 15 _ Ku 1IN78B IN7BBR IN78BM IN78BMR 13 10.0 ku 1N3205 IN3205R IN3205M IN3205MR 14 9.8 ku IN78C IN78CR IN7BCM IN7BCMR _ 9.5 ku 1N46038 IN4603R3 IN4603M INAGOSMR - 95 Ku IN78D IN78DR IN780M IN7BDMR _ 8.8 Ku Inag043 INago4RS INAGOAM IN4604MR _ 88 Ku IN7BE IN7BER IN7BEM IN7BEMR _ 8.0 Ku IN46059 INAGO5R? INAGO5M INAGOSMA _ 8.0 ku IN78F IN7BFR IN7FM IN7FMR _ 75 ku 1N78G IN78GR 1N78GM IN78GMR 70 K N26 INZ6R IN26M INZ6MR 25 13.1 K IN26A IN2AR IN26AM IN26AMR 20 11.3 K IN26B IN26BR IN26BM IN26BMR 15 11.0 K IN26C IN26CR INZ6CM IN26CMR 15 9.5 162 (25) a4 )i- 10min. 19.4 230 TWO PLACES \ 18.7 in m \ 10.3 8.768 r : t 1. Outside 0, 0.220/.218 adie 0.736 applies only to , a | >I P99 apalis on arg (NOTE }( inore2) Y T 2. Marking to be confined to |g 0.147 T RX 019 this region. MIN. GLASS O19 i 085 021 y t3 a tia B.7 105 TWO PLACES 8.011 10.279 2.67 0.533 0.67) + DO7 2.16 0.483 (es) 0220, 0.1840 +) E< 0.26 (2 5.46 we REF ONLY 0.215 15.46 ~~ re 1.60, OOeS a 4 Wa (real 7031 OINNER CONDUCTOR REE ONLYBeem 0258354 ADVANCED SEMICONDUCTOR 82D 00070 'D 7207.07 ee oe ADVANCED SEMICONDUCTOR 2 De Ppoessasy ooooo70 1 ff Seeeees ELECTRICAL CHARACTERISTICS > TEST CONDITIONS 2 PACKAGE BURNOUT odtus yswA CONVERSION | FREQUENCY PaWER BASIC OUTLINE ERGS MAX MAX #8 MHz ni TYPE MIN | MAX 1.0 325 | 625 _ 75 16000 1.0 IN78 00-37 1.0 365 | 565 1.6 7.0 16000 1.0 IN78A 00-37 1.0 365 | 565 1.6 65 16000 1.0 IN78B 00-37 1.0 365 | 565 1.6 63 16000 1.0 1N3205 00-37 1.0 400 | 565 15 6.0 16000 1.0 IN78C 00-37 1.0 365 | 565 15 16000 1.0 1N4609 00-37 10 400 | 565 15 5.7 16000 1.0 1N78D 00-37 1.0 400 | 565 15 _ 16000 1.0 1N4604 00-37 1.0 400 | 565 15 5.7 16000 1.0 IN7BE 00-37 1.0 400 | 565 15 _ 16000 1.0 IN4605 00-37 1.0 400 | 565 15 57 16000 1.0 IN78F 00-37 1.0 400 | 565 15 16000 1.0 IN786 00-37 03 300 | 600 _ 8.5 23984 1.0 N26 00-37 03 300 | 600 1.6 75 23984 1.0 IN26A 00-37 03 400 | 600 18 75 23984 1.0 IN26B 00-37 03 400 | 600 15 75 23984 1.0 IN26C 00-37 ps) N 0 T E Ss 2.34 0.094 0.092 ee 6.35 IT Oo r-7 1. Test Conditions: NFip= T T+ T faz 1.508, |= 30 MHz, A 6.10 | 0240 0.216 ( Iq | \ | 9250, 9.206 , 252 = 100 Ohms. 5.64) 0.222- 0.195 N | 0246 0.292" | 742 + + = . (RAB 0.030 Te 2. IF impedance is measured 4.95 0.199 _ by modulating the 0.190 0.620 0.193 0,057 specified test frequency 0.180 0.762 (522 05 0.047 with a 1000H2 signal, R, (Be 0.792 + (4.83 0.508 (iss 90 (2 sn ied titan ower 19.5 0.766 457 840 1.19 feval p dimensions same as other prong. C{ Pp 0.800 1. Base removable, ( (23 3 ) }j Enclosing prong with 3. Broadband Device. D023 | Removable Base DO22 | Fixed Base