Standard Power MOSFETs RFK25P08, RFK25P10 P-Channel Enhancement-Mode Power Field-Effect Transistors 25 A, -100 V -80 V ps(on): 0.15Q Features: 8 SOA is power-dissipation limited = Nanosecond switching speeds = Linear transfer characteristics High input impedance 8 Majority carrier device The RFK25P10 and RFK25P08* are p-channel enhance- ment-mode silicon-gate power field-effect transistors de- signed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors re- quiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. The RFK-types are supplied in the JEDEC TO-204AE steel package. The RFK25P10 and RFK25P08 types were formerly RCA developmental numbers TA9412A and TA9412B, respectively. MAXIMUM RATINGS, Absolute-Maximum Values (Tc=25C): DRAIN-SOURCE VOLTAGE ..... 0.0... cece cece cence neve teteeees Voss DRAIN-GATE VOLTAGE, Ras=1 MQ) ........... cece ee ce sens eee ees Voor GATE-SOURCE VOLTAGE .... 0... cece cece ence tenet eeeeer enous Vos DRAIN CURRENT, RMS Continuous ............. ccc e een es eeeeeeenee lo Puls@d 0.0... ... cece ccc c cence eee tees ee eeetenes low POWER DISSIPATION 2.0.0.0... 022s cece cc ce cere este ee eetencnneteres Pr @ Tce = 25C Derate above Tc:=25C OPERATING AND STORAGE TEMPERATURE ..................- Ti, Tet 3-444 File Number 1516 Ss 92CS-36465 P-CHANNEL ENHANCEMENT MODE TERMINAL DESIGNATIONS DRAIN SOURCE {FLANGE ) O O GATE 92Cs-37601 JEDEC TO-204AE RFK25P 16 RFK25P06 -100 -80 v -100 -80 Vv +20 Vv 25 A 60 A 150 w 1.2 wc -55 to +150 cStandard Power MOSFETs RFK25P08, RFK25P10 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc)=25C unless otherwise specitied. LiMITS TEST RFK25P10 RFK25P08 CHARACTERISTIC SYMBOL CONDITIONS | MIN. | MAX. | MIN. | MAX. UNITS Drain-Source Breakdown Voltage BVoss Ib=t MA -100 _ -80 _ Vv Vas=0 Gate Threshold Voltage Vas({th) Vas=Vps -2 -4 -2 -4 Vv lo=1 mA Zero Gate Voltage Drain Current loss Vos=-80 V _ 1 -_ _ Vps=-65 Vv _ _ _ 1 Te=125C HA Vos=-80 V - 50 _ _ Vos=-65 V _ _ = 50 Gate-Source Leakage Current lass Ves= + 20 V _ 100 _ 100 nA Vos=0 a = Drain-Source On Voitage Vos(on) [p=12.5A _ -1.88 _ -1.88 Voes=-10 Vv 4 V lp=25 A _ +4 _ 6 Ves=~-10 V . ine. a = Static Drain-Source On Resistance fos(on) Ip=12.5A _ 0.15 _ 0.15 a Ves=-10 V Forward Transconductance Qt" Vos=-10 V 4 - 4 _ mho 1p=12.5A Input Capacitance Ciss Vos=-25 V _ 3000 _ 3000 Output Capacitance Cons Ves=0 V _ 1500 _ 1500 pF Reverse Transfer Capacitance Cres f= 1MHz _ 600 _ 600 Turn-On Delay Time ta (on) Vpp=-50 V 35(typ)| 50 {35(typ)}| 50 Rise Time t, Ip=12.5A N6S(typ)} 250 [i65(typ)| 250 ns Turn-Off Delay Time ta (off) Roen=Rgs=50 2 P70(typ)| 400 P70(typ)| 400 Fall Time tr Vas=-10 V__ fi6S(typ)| 250 165(typ)| 250 Thermal Resistance Rac RFK25P10, Junction-to-Case RFK25P08 0.83 0.88 c/w *Pulsed: Pulse duration = 300 uS max., duty cycle = 2%. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS TEST LIMITS CHARACTERISTIC SYMBOL RFK25P10 RFK25P08 /UNITS CONDITIONS Min. Max. Min. Max. Diode Forward Voltage* Vsp -Isp=12.5 A _ 1.4 = 1.4 Vv : 4A R R - . - everse Recovery Time t die/di=100 A/ps 300 typ 300 typ. ns *Puise Test: Width < 300 us, Duty Cycle < 2%. 3-445Standard Power MOSFETs RFK25P08, RFK25P10 100 g| CASI TEMPERATURE(Tc }= 25% (CURVES MUST BE DERATED S| LINEARLY WITH INCREASE IN TEMPERATURE) DRAIN CURRENT (Ip }~A 2 4 68 2 6 8 2 4 10 -t00 DRAIN~ TO- SOURCE VOLTAGE (Vpg)V 68 -1000 92CS8~ 37240 Fig. 1 - Maximum safe operating areas for all types. CASE TURE tc 9208-37231 Fig. 2 - Power dissipation vs. temperature derating curve for all types. Vgg*-lov w g 2 zg a a Pa] ~50 50 loc: 150 JUNCTION TEMPERATURE (ry I-ee 92CS- 37242 Fig. 4 - Normalized drain-to-source on resistance to junction temperature for all types. 3-446 Tops ima NORMALIZED GATE THRESHOLD VOLTAGE Lgg (tn) JUNCTION TEMPERATURE (Ty )*C 92CS- 37241 Fig. 3 - Typical normalized gate threshold voltage as a function of junction temperature for all types. PULSE TEST PULSE DURATION = 80ps DUTY CYCLES 2% 7 8 3 2.3 5-6 GATE - TO- SOURCE VOLTAGE (Vgs)-Vv 9208-37243 Fig. 5 - Typical transter characteristics for ail types.Standard Power MOSFETs RFK25P08, RFK25P10 BY, T TY T T oss GATE PULSE DURATION= 80yus SURGE DUTY CYCLE <2 % | VOLTAGE CASE TEMPERATURE (Tc )# 25C 7s Yoo = Voss Yoo = Voss. r $ .75 Voss 0.75 Vpss 3 | 50 0.50 Voss 0.50 Vogs: 1 g 0.25 Vngs 0.25 Vogs g Fob $ R= 40 2s Ig (REF) = 1.5 ma | Vos =-10V ORAIN SOURCE VOLTAGE Ql ig (REF) Ig (RES) - 2075 ach 87g ach TIME Microseconds ezcearnse - ~6 =? DRAIN- TO-SOURCE VOLTAGE (Vpg)-V 92CS-37245 Fig. 6 - Normalized switching waveforms for constant gate-current. Fig. 7 - Typical saturation characteristics for all types. Refer to RCA application notes AN-7254 and AN-7260. Ves*-l0Vv PULSE TEST PULSE DURATION =80us OUTY CYCLE <2% pF a z x S t 3 = s an 2 1 wi g z < 5 2 6 z 3 = z 2 < E u Ee 8 < a 3 < 3 3 z < = 5 20 * 0 % O-SOURCE VOLTAGE (Vps)-V DRAIN-TO- vy > DRAIN CURRENT (Ip }A Ds 9208-37247 92CS-37246 Fig, 8 - Typical drain-to-source on resistance as a function of Fig. 9 - Capacitance as a function of drain-to-source voltage drain current for all types. for all types. Veg7-10V 4a PULSE TEST PULSE DURATION? 80z5 DUTY CYCLE < 2% S | son Vo a I TO SCOPE 2 | ( Yop = < | ( -50V 3 \ KELVIN 3 { CONTACT 3 I I a Z I l E. t l g 1 | a I ee ee al & ~ 92CS-37408 {Ip )-A 9208-37248 Fig. 10 - Typical forward transconductance as a function of Fig. 11 - Switching time test circuit. drain current for all types. 3-447