TIP29,A,B,C(NPN)
TIP30,A,B,C(PNP)
1.0 Amp
Complementary
Silicon Power
Transistors
Features
Maximum Ratings
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage
VCBO Collector-Base Voltage
TIP29, TIP30
TIP29A, TIP30A
TIP29B, TIP30B
TIP29C, TIP30C
40
60
80
100
V
VEB Emitter-Base Voltage 5.0 V
ICCollector Current- Continuous
Peak (1) 1.0
3.0 A
IBBase Current-Continuous 0.4 A
PDTotal power dissipation @T
C=25OC
Derate above 25OC
30
0.24
W
W/OC
TJ, Junction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
VCEO(SUS)
Collector-Emitter Sustaining Voltage(note 2)
(I
C=30mAdc, IB=0) TIP29, TIP30
TIP29A, TIP30A
TIP29B, TIP30B
TIP29C, TIP30C
40
60
80
100
---
---
---
---
Vdc
IEBO Emitter-Base Cutoff Current
(VEB=5.0Vdc, I
C=0)
--- 1.0 mAdc
ICES Collector Cutoff Current
(VCE=40V, VEB
=0) TIP29, TIP30
(VCE=60V,VEB
=0) TIP29 A, TIP30A
(VCE=80V,VEB
=0) TIP29 B, TIP30B
(VCE=100V, VEB=0) TIP29 C, TIP30C
---
---
---
---
200
200
200
200
uAdc
ICEO Collector Cutoff Current
(VCE=30Vdc, I
B=0)
TIP29, TIP29A, TIP30, TIP30A
(VCE=60Vdc, I
B=0)
TIP29B, TIP29C, TIP30B, TIP30C
---
---
0.3
0.3 mAdc
ON CHARACTERISTICS (2)
hFE(1) DC Current Gain
(I
C=0.2Adc, VCE=4.0Vdc)
(I
C=1.0Adc, VCE=4.0Vdc)
40
15
---
75
----
VCE(sat) Collector-Emitter Saturation Voltage
(I
C=1.0Adc, IB=125mAdc) --- 0.7 Vdc
VBE(ON) Base-Emitter On Voltage
(I
C=1.0Adc,VCE=4.0Adc) --- 1.3 Vdc
fT
Current-Gain-Bandwidth Product(note 3)
(I
C=200mAdc, VCE=10Vdc,
f=1.0MHZ)
3.0 --- MH
Z
hfe Small-Signal Current Gain
(IC=0.2Adc, VCE=10Vdc, f=1.0KHz )
20 --- ---
2. Pulse Test: Pulse Width=300us, Duty Cycle <2.0%
3.
fT=
|
h
f
e
|
x f
test
TO-220
Revision: C 2012/07/13
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MCC TM
Micro Commercial Components
Rth(jc) is 4.167O
C/W, Rth(ja) is 62.5OC/W
www.mccsemi.com
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xMarking:Type Number
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
MIN MAX NOTE
A .560 .625 14.22 15.88
B .380 .420 9.65 10.67
C .140 .190 3.56 4.82
D .020 .045 0.51 1.14
F .139 .161 3.53 4.09
G .190 .110 2.29 2.79
H --- .250 --- 6.35
J .012 .025 0.30 0.64
K .500 .580 12.70 14.73
L .045 .060 1.14 1.52
N .190 .210 4.83 5.33
Q .100 .135 2.54 3.43
R .080 .115 2.04 2.92
S .045 .055 1.14 1.39
T .230 .270 5.84 6.86
U ----- .050 ----- 1.27
V .045 ----- 1.15 -----
G
R
Q
H
U
L
C
J
K
A
F
S
T
1
3
2
V
DIMENSIONS
INCHES MM
DIMMIN MAX
PIN 1. BASE
PIN 2. COLLECTOR
PIN 3. EMITTER
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Mounting Torgue: 5 in-lbs Maximum
B
A
V
S
D
L
0.03
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
0.03
hFE, DC CURRENT GAIN
0.5
5.0
70
3.0
100
7.0
300
30
0.1 0.3
0.07 1.0
TJ = 150°C
25°C
-ā55°C
VCE = 2.0 V
500
10
50
3.0
t, TIME (ăĂs)µ
Figure 2. Turn–Off Time
IC, COLLECTOR CURRENT (AMP)
IB1 = IB2
IC/IB = 10
ts = ts - 1/8 tf
TJ = 25°C
ts
0.03
Figure 3. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
0.02 0.1 3.0
0.07
1.0
1.0
IC/IB = 10
TJ = 25°C
tr @ VCC = 10 V
t, TIME (ăĂs)µ
0.5
0.3
0.1
0.05
0.05 0.3 0.5
td @ VEB(off) = 2.0 V
0.03
0.7
2.0
0.07 0.7
tr @ VCC = 30 V
tf @ VCC = 10 V
tf @ VCC = 30 V
0.07
1.0
0.5
0.3
0.1
0.05
0.03
0.7
2.0
0.2
0.1 3.01.00.05 0.3 0.50.07 0.7 2.00.2
Figure 4. Active Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE, (VOLTS)
10
0.1 10
SECOND BREAKDOWN LIMITED
THERMALLY LIMITED @ TC = 25°C
BONDING WIRE LIMITED
IC, COLLECTOR CURRENT (AMPS)
1.0 20 10
0
40
3.0
4.0
0.1
TIP29, 30
TIP29A, 30A
TIP29B, 30B
TIP29C, 30C
TJ = 150°C
CURVES APPLY BELOW
RATED VCEO
1 ms
dc
5 ms
2.00.2
MCC
TIP29,A,B,C(NPN)
TIP30,A,B,C(PNP)
Revision: C 2012/07/13
TM
Micro Commercial Components
www.mccsemi.com
2 of 3
MCC
Revision: C 2012/07/13
TM
Micro Commercial Components
www.mccsemi.com
3 of 3
Ordering Information :
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approval of Micro Commercial Components Corporation.
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Device Packing
Part Number-BP
Bulk;1Kpcs/Box