CLA30E1200PC
4/2 1
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Single Thyristor
High Efficiency Thyristor
Part number
CLA30E1200PC
Marking on Product: CLA30E1200PC
Backside: anode
TAV
T
V V1.27
RRM
30
1200
=
V=V
I=A
Features / Advantages: Applications: Package:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
TO-263 (D2Pak)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
Disclaimer Notice
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions. 20190212fData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
CLA30E1200PC
V = V
A²s
A²s
A²s
A²s
Symbol
Definition
Ratings
typ.
max.
I
V
IA
V
T
1.30
R0.5 K/W
min.
30
VV
10T = 25°C
VJ
T = °C
VJ
mA2V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
115
P
tot
250 WT = 25°C
C
30
1200
forward voltage drop
total power dissipation
Conditions
1.59
T = 25°C
VJ
125
V
T0
V0.86T = °C
VJ
150
r
T
13.2 mΩ
V1.27T = °C
VJ
I = A
T
V
30
1.65
I = A60
I = A60
threshold voltage
slope resistance for power loss calculation only
µA
125
VV1200T = 25°C
VJ
IA47
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
150
Wt = 5
P
P
GAV
W0.5
average gate power dissipation
C
J
13
junction capacitance
V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
150
300
325
325
315
A
A
A
A
255
275
450
440
1200
300 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 150 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V = 6 V T = °C25
(dv/dt) T = 150°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
I A; V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
90 A
T
P
G
= 0.3
di /dt A/µs;
G
=0.3
DRM
cr
V = ⅔ V
DRM
GK
500
1.3 V
T = °C-40
VJ
I
GT
gate trigger current
V = 6 V T = °C25
DVJ
30 mA
T = °C-40
VJ
1.6 V
50 mA
V
GD
gate non-trigger voltage
T = °C
VJ
0.2 V
I
GD
gate non-trigger current
1 mA
V = ⅔ V
D DRM
150
latching current
T = °C
VJ
90 mA
I
L
25t µs
p
= 10
I A;
G
= 0.3 di /dt A/µs
G
= 0.3
holding current
T = °C
VJ
60 mA
I
H
25V = 6 V
D
R = ∞
GK
gate controlled delay time
T = °C
VJ
2 µs
t
gd
25
I A;
G
= 0.3 di /dt A/µs
G
= 0.3
V = ½ V
D DRM
turn-off time
T = °C
VJ
150 µs
t
q
di/dt = A/µs10 dv/dt = V/µs20
V =
R
100 V; I A;
T
= 30 V = ⅔ V
DRM
tµs
p
= 200
non-repet., I = 30 A
T
125
R
thCH
thermal resistance case to heatsink
K/W
Thyristor
1300
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
0.25
IXYS reserves the right to change limits, conditions and dimensions. 20190212fData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
CLA30E1200PC
Ratings
Pr
odu
c
t
M
a
rk
in
g
Date Code
Part No.
Logo
Assembly Code
XXXXXXXXX
IXYS
Zyyww
000000
Assembly Line
C
L
A
30
E
1200
PC
Part description
Thyristor (SCR)
High Efficiency Thyristor
(up to 1200V)
Single Thyristor
TO-263AB (D2Pak) (2)
=
=
=
CLA30E1200HB TO-247AD (3) 1200
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
T
VJ
°C150
virtual junction temperature
-40
Weight g2
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
F
C
N60
mounting force with clip
20
I
RMS
RMS current
35 A
per terminal
125-40
CS22-12io1M
CS22-08io1M
TO-220ABFP (3)
TO-220ABFP (3)
1200
800
CMA30E1600PN
CMA30E1600PB
TO-220ABFP (3)
TO-220AB (3)
1600
1600
TO-263 (D2Pak)
CLA30E1200PC-TUB Tube 50 523595CLA30E1200PC
Similar Part Package Voltage class
CLA30E1200PB TO-220AB (3) 1200
Delivery Mode Quantity Code No.Ordering Number Marking on Product
Alternative
Ordering
CLA30E1200PC-TRL 508235Tape & Reel 800CLA30E1200PCStandard
T
stg
°C150
storage temperature
-40
threshold voltage
V0.86
mΩ
V
0 max
R
0 max
slope resistance *
10
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Thyristor
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20190212fData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
CLA30E1200PC
W
c2
A
A1
c
L
E
2x e
L1
D
321
3.81
(0.150)
1.78
(0.07)
2.54 (0.100)
3.05
(0.120)
10.92
(0.430)
9.02
(0.355)
mm (Inches)
Recommended min. foot print
3x b2
E1
2x b
H
D1
Supplier
Option
L2
4
min max min max
A 4.06 4.83 0.160 0.190
A1
A2
b 0.51 0.99 0.020 0.039
b2 1.14 1.40 0.045 0.055
c 0.40 0.74 0.016 0.029
c2 1.14 1.40 0.045 0.055
D 8.38 9.40 0.330 0.370
D1 8.00 8.89 0.315 0.350
D2
E 9.65 10.41 0.380 0.410
E1 6.22 8.50 0.245 0.335
e
e1
H 14.61 15.88 0.575 0.625
L 1.78 2.79 0.070 0.110
L1 1.02 1.68 0.040 0.066
Wtyp.
0.02 0.040 typ.
0.0008 0.002
Dim.
Millimeter Inches
typ. 0.10 typ. 0.004
2.41 0.095
0.098
4.28 0.169
All dimensions conform with
and/or within JEDEC standard.
2,54 BSC 0,100 BSC
2.5
4/2 1
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Outlines TO-263 (D2Pak)
IXYS reserves the right to change limits, conditions and dimensions. 20190212fData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
CLA30E1200PC
0 40 80 120 160
0
10
20
30
40
0 25 50 75
0
1
2
3
4
10
-2
10
-1
10
0
10
1
10
-1
10
0
10
1
10
2
0,001 0,01 0,1 1
80
120
160
200
240
2
8
0
0,5 1,0 1,5 2,0
0
10
20
30
40
50
60
1 10 100 1000 10000
0,0
0,1
0,2
0,3
0,4
0,5
0,6
I
T
[A]
t [s]
V
T
[V]
2 3 4 5 6 7 8 9 011
100
1
0
00
I
2
t
[A
2
s]
t [ms]
I
TSM
[A]
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 45°C
50 Hz, 80% V
RRM
T
VJ
= 125°C
T
VJ
= 45°C
V
R
= 0 V
V
G
[V]
I
G
[mA]
I
T(AV)M
[A]
T
case
[°C]
Z
thJC
[K/W]
t [ms]
Fig. 1 Forward characteristics Fig. 2 Surge overload current
I
TSM
: crest value, t: duration
Fig. 3 I
2
t versus time (1-10 s)
Fig. 4 Gate voltage & gate current
Triggering: A = no; B = possible; C = safe
Fig. 6 Max. forward current at
case temperature
Fig. 7 Transient thermal impedance junction to case
T
VJ
= 150°C
125°C
I
GD
: T
VJ
= 125°C
I
GD
: T
VJ
= 25°C
A
B
B
B
C
t
gd
[µs]
I
G
[A]
lim.
typ.
Fig. 5 Gate controlled delay time t
gd
0 10 20 30 40
0
10
20
30
40
50
60
I
T(AV)
[A]
P
(AV)
[W]
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
0 50 100 150
T
amb
[°C]
T
VJ
= 125°C
R
thHA
0.6
0.8
1.0
2.0
4.0
8.0
dc =
1
0.5
0.4
0.33
0.17
0.08
dc =
1
0.5
0.4
0.33
0.17
0.08
i R
thi
(K/W) t
i
(s)
1 0.08 0.01
2 0.06 0.001
3 0.2 0.02
4 0.05 0.2
5 0.11 0.11
I
GT
: T
VJ
= 25°C
I
GT
: T
VJ
= 0°C
I
GT
: T
VJ
= -40°C
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20190212fData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved