© 2006 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 µA 200 V
VGS(th) VDS = VGS, ID = 4 mA 2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0 ±200 nA
IDSS VDS = VDSS 25 µA
VGS = 0 V TJ = 150°C 250 µA
RDS(on) VGS = 10 V, ID = 0.5 ID25 22 m Ω
VGS = 15 V, ID = 140A 17 m Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C 200 V
VDGR TJ= 25°C to 175°C; RGS = 1 MΩ200 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C90A
ID(RMS) External lead current limit 75 A
IDM TC= 25°C, pulse width limited by TJM 280 A
IAR TC= 25°C60A
EAR TC= 25°C 100 mJ
EAS TC= 25°C4J
dv/dt IS≤ I
DM, di/dt ≤ 100 A/µs, VDD ≤ V
DSS, 10 V/ns
TJ≤ 150°C, RG = 4 Ω
PDTC= 25°C 300 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
VISOL 50/60 Hz, RMS, 1 minute 2500 V~
MdTerminal torque 1.13/10 Nm/lb.in.
Mounting torque 1.13/10 Nm/lb.in.
Weight 5g
DS99298E(12/05)
PolarHTTM HiPerFET
Power MOSFET
ISOPLUS247TM
IXFR 140N20P
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
Features
lInternational standard isolated
package
lUL recognized package
lUnclamped Inductive Switching (UIS)
rated
lLow package inductance
- easy to drive and to protect
lFast intrinsic diode
Advantages
lEasy to mount
lSpace savings
lHigh power density
VDSS = 200 V
ID25 = 90 A
RDS(on) ≤≤
≤≤
≤ 22 m ΩΩ
ΩΩ
Ω
trr ≤ ≤
≤ ≤
≤ 200 ns
G = Gate D = Drain
S = Source
(Isolated Tab)
GDS
ISOPLUS247 (IXFR)
E153432
(Electrically Isolated Back Surface)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFR 140N20P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS= 10 V; ID = 0.5 ID25, pulse test 50 84 S
Ciss 7500 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1800 pF
Crss 280 pF
td(on) 30 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 60 A 35 ns
td(off) RG = 3.3 Ω (External) 150 ns
tf90 ns
Qg(on) 240 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 50 nC
Qgd 100 nC
RthJC 0.5 °C/W
RthCS ISOPLUS247 0.15 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. typ. Max.
ISVGS = 0 V 90 A
ISM Repetitive 280 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = 25 A, -di/dt = 100 A/µs 200 ns
QRM VR = 100 V, VGS = 0 V 0.6 µC
IRM 6Α
ISOPLUS 247 OUTLINE
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2
© 2006 IXYS All rights reserved
IXFR 140N20P
Fig. 2. Exte nde d Output Characteristics
@ 25
º
C
0
30
60
90
120
150
180
210
240
270
300
012345678910
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
8V
9V
Fig. 3. Output Characteristics
@ 150
º
C
0
20
40
60
80
100
120
140
0123456
V
D S
- Volts
I
D
- Amperes
VGS
= 10V
9V
8V
5V
6V
7V
Fig. 1. Output Characteristics
@ 25
º
C
0
20
40
60
80
100
120
140
00.5 11.5 22.5
V
D S
- Volts
I
D
- Amperes
VGS
= 10V
9V
8V
7V
6V
5V
Fig. 4. R
DS(on
)
Norm alized to I
D
= 70A
Value vs. Junction Tem perature
0.5
1
1.5
2
2.5
3
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
D S ( o n )
- Normalized
ID
= 140A
ID = 70A
VGS = 10V
Fig. 5. R
DS(on)
Norm alized to
I
D
= 70A Value vs . Drain Current
0.5
1
1.5
2
2.5
3
3.5
4
0 50 100 150 200 250 300
I
D
- Amperes
R
D S ( o n )
- Normalized
TJ = 25
º
C
VGS = 10V
TJ = 175
º
C
V
GS
= 15V
Fig. 6. Drain Current vs. Case
Tem perature
0
10
20
30
40
50
60
70
80
90
-50 -25 0 25 50 75 100 125 150 175
TC - Degrees Centigrade
I D - Amperes
External Lead Current Limit
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFR 140N20P
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - picoFarads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 25 50 75 100 125 150 175 200 225 250
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 100V
I
D
= 70A
I
G
= 10m A
Fig. 7. Input Admittance
0
25
50
75
100
125
150
175
200
225
44.5 55.5 66.5 77.5 8
V
G S
- Volts
I
D
- Amperes
T
J
= 150ºC
25ºC
-40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
110
120
0 40 80 120 160 200 240
I
D
- Amperes
g
f s
- Siemens
T
J
= -40ºC
25ºC
150ºC
Fig. 9. Source Curre nt vs.
Source-To-Drain Voltage
0
50
100
150
200
250
300
350
0.4 0.6 0.8 1 1.2 1.4
V
S D
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 12. Forw ard-Bias
Safe Operating Area
1
10
100
1000
1 10 100 1000
VD S - Volts
I D - Amperes
100µs
1ms
DC
TJ = 175ºC
TC = 25ºC
RDS(on) Limit
10ms
25µs
© 2006 IXYS All rights reserved
IXFR 140N20P
Fig. 13. Maximum Transient Thermal Resistance
0.01
0.10
1.00
1 10 100 1000
Pulse Width - milliseconds
R
( t h ) J C
-
ºC / W
