File No. 574 URC Solid State Division RF Transistors 40915 0.2-to-1.4-GHz Low-Noise Silicon N-P-N Transistor For High-Gain Small-Signal Applications Features: Low noise figure: JEDEC TO-72 H-1289 RCA-40915* is an epita=ial silicon n-p-n planar transistor in- tended for low-power, small-signal applications where both low noise and high gain are desirable. It utilizes a hermetically sealed four-lead JEDEC TO-72 package. Ail of the elements of the transistor are insulated from the case, which may be grounded by means of the fourth lead. Formerly RCA Dev. No, TA8104. MAXIMUM RATINGS, Abdbsolute-Maximum Values: Collector-to-Base Voltage Vcspo 35 Vv Collector-to-Emitter Voltage ....... Vceo +15 Vv Emitter-to-Base Voltage ........... Vepo 3.5 Vv Collector Current (Continuous) ..... Io 40 mA Transistor Dissipation: Pr At ambient temperatures up to 26C 20... 200 mW At ambient temperatures above QC eee eee eens Derate linearly at 1.14 mw/C Temperature Range: Storage and Operating (Junction) .............. 65 to +200 C' NE = 2.5 dB (max.) with 11 dB gain at 450 MHz = 3.0 dB (typ.) at 890 MHz 4.5 dB (typ.) at 1.3 GHz High gain (tuned, unneutralized): Gpe = 14 dB (min.) at 450 MHz = 6.5 dB (typ.) at 1.3 GHz High gain-bandwidth product Large dynamic range Low distortion COLLECTOR-TO-EMITTER VOLTAGE (Vcp)=l0V COLLECTOR CURRENT (Ic)}+I.5 mA AMBIENT TEMPERATURE (Ta }= c NOISE FIGURE 0 200 400 600 800 1000 '200 1400 FR=QUENCY (#) MHz 92CS- 20062 Fig.1-Typical noise figure vs. frequency. us COLLECTOR-TO-EMITTER VOLTAGE (Vcp)=10V AMBIENT TEMPERATURE (Ta )= 25C NOTE: f CALCULATED FROM MEASURED VALUES OF S- PARAMETERS GAIN-BANDWIDTH PRODUCT (f7}~ GHz COLLECTOR CURRENT (Ic) -mA 92C5-19735 Fig.2Gain-bandwidth product vs. collector current. 325 11-7340915 File No. 574 ELECTRICAL CHARACTERISTICS at Ambient Temperature (Ta) = 26C TEST CONDITIONS pc DC CHARACTERISTIC SYMBOL COLLECTOR CURRENT LIMITS UNITS VOLTAGE (Vv) (mA) VcB VcE le | Ip | tc MIN. | MAX. STATIC Collector Cutoff Current Icgo 10 0 ~ 20 nA Collector-to-Base ViBR)CBO 0 0.01 35 - Vv Breakdown Voltage Collector-to-Emitter ViBRICEO 0 | 0.1 15 ~ Vv Breakdown Voltage Emitter-to-Base VIBR)E BO 0.01 oO 3.5 - Vv Breakdown Voltage DC Forward-Current hee 10 3 20 - - Transfer Ratio Therma! Resistance: Rosa - 880 C (Junction-to-Ambient) i DYNAMIC Device Noise Figure (f = 450 MHz) NF 10 1.5 ~ 2.5 dB Small-Signal_ Common-Emitter Gpe 10 15 | 14 - dB Power Gain (f= 450 MHz) Unneutralized Amplifier At minimum noise figure Gpe 10 15 11.0 _ dB Collector-to-Base Output Cobo 10 0 - 1.0 pF Capacitance (f = 1 MHz} SB] FREQUENCY (f)= 450MHz | fl AMBIENT TEMPERATURE (Ta}= 25C gS 4 i 1 a 2 | LA N 1 a2 z | 3 . vt & 8 sya 3 & g| COLLECTOR - TO-EMITTER & w | VOLTAGE (Vce}= 10V z 3 s 2 & ig |__| 3 ' -TO-EMITTER VOLTAGE (Voge) =i0V 3 1 Y TEMPERATURE (Ta)= 25C, 2ZG= 2, =502 1 a ts a : 0 COLLECTOR CURRENT (I}-mA 92c$-19736 COLLECTOR CURRENT (Tc}~mA 9208-19737 Fig.3Typical insertion power gain vs. collector current. Fig.4Typical noise figure vs. collector current. 326File No. 574 40915 FREQUENCY (f)*450 MHz AMBIENT TEMPERATURE (Ta}= 25C CE BTiS tit iets 18) Lal Pst rat iy Ist eH COLLECTOR - TO-EMITTER VOLTAGE {Vce}=10V TERMINATIONS : 502 | AMBIENT TEMPERATURE (T, }= 25C 0 OF 02 03 0405 06 0708 09 | Dobe ld TER REFLECTION-COEFFICIENT SCALE od : POWER GAIN AT 4 COLLECTOR CURRENT (Ic}-mA 9208-19738 Fig.5Typical power gain (at minimum noise figure} vs. collector current. FREQUENCY (f}=450 MHz & AMBIENT TEMPERATURE (Tg}= 25C Me 73 z= rt20 =u is az 240N 48 #0 ee So G ao Your 6 eN ze ate ot Sa gw t 3 oe 58 0 ere bz oy pat oo -10 2 to 20 COLLECTOR CURRENT (I)-mA 92CS-19739 Fig.6Typical output power level (with 1 dB of gain compression) vs. collector current. 92CS-19741 Fig.8~Typical input reflection coefficient. COLLECTOR -TO-EMITTER VOLTAGE (VcE):10V TERMINATIONS: 50.2 AMBIENT TEMPERATURE (Tal=25C RES MB SS (3 TH LE oa) PTE ESS of te0 rittitis As 20 -40 FORWARD TRANSFER COEFFICIENT (S21dB| REVERSE TRANSFER COEFFICIENT (Si2) dB 92CS -19780 Fig.7~Typical forward and reverse transfer coefficients. 327 Vee" Veet icy OOUBLE DOUBLE- 10-48 STUB STUB Pap TUNERS TUNERS L_ + te i Bias BIAS T SIGNAL TEE DEVICE TEE 1 GENERATOR UNOER TEST* | 10-48 PAD RF AMPLIFIER NOISE SOURCE SELECTIVITY FILTER PRECISION ATTENUATOR MIXER: LOCAL, OSCILLATOR L__. 9205-19743 * In General Radio type 1607-P44 transistor mount or equivalent. ** Vpp adjusted for Ic = 15 mA. Fig.9Block diagram af test setup for measurement of power gain and noise figure.40915 File No. 574 CENTER REFLECTION COEFFICIENT SCALE TERMINATIONS: 502 P AMBIENT TEMPERATURE (T, }= 25C Fig.10Typical output reflection coefficient. DIMENSIONAL OUTLINE JEDEC TO-72 Oo Of 02 030405 06 07 08 OF |! Leeder site abit tia tis C2 Poytl2_ #5021 t 9205-19744 Cy: 1.0- 30 pF C2,C3: 1,.0-20 pF C4,Cy: 0.04 UF Cg: 1-10 pF Ly: 2 turns No. 18 wire, 3/16 in. (0.188 mm) . 1D, 0.10 in. (2.54 mm) long Lg: 3 turns No. 18 wire, 3/16 in. (0.188 mm} 1D, 0.15 in. (3.81 mm) tong L3,Lq: 0.22-MH rf choke Lg: 3 turns No. 18 wire, 3/16 in. (0.188 mm} 1D, 0.15 in. (3.81 mm) long * Vep adjusted for I = 1.5 mA Fig.11Circuit diagram of 450-MHz amplifier (unneutralized) used for measurement of power gain and noise figure. INCHES MILLIMETERS SYMBOL NOTES MIN MAX MIN MAX A 0.170 | 0210 | 4.32 5.33 ob 0016 | 0021 0406 | 0533 | 2 SEATING bg 0016 | 0019 0.406 | 0483 | 2 PLANE od 0.209 | 0.230 531 5.84 TERMINAL CONNECTIONS D4 0.178 | 0.195 452 4.95 e 0.100 T.P. 2.54 TP 4 Lead 1 Emitter be ey a.o5c TP 1277 P 4 Lead 2 Base b 0.030 0.762 \ 0036 | 0046 | ogi4 | 117 Lead 3 Collector k 0.028 | 0.048 D711 | 1.22 3 Lead 4 Case BOTTOM ( 0.500 12.70 2 VIEW y 0.050 1.27 2 Ip 0.250 6.35 2 a 45 TP 45 TP. 4,6 Note 4: (Four leads). Maximum number leads omitted in this out- fine, none (0). The number and position of leads actually present are indicated in the product registration, Outline designation deter- mined by the tocation and minimum angular or linear spacing of any two adjacent leads. Note 2: (All leads) gba applies between 'y and Ip. @b applies be- tween [5 and 0.50 in. (12.70 mm) from seating plane. Diameter is uncontrolled in , and beyond 0.50 in. (12.70 mm) from seating plane. 328 Note 3: Measured from maximum diameter of the product. Note 4: Leads having maximum diameter 0.019 in. {0.484 mm) measured in gaging plane 0.054 in. (1.37 mm) +0.001 in. (0.025 mm} 0,000 in. (0.000 mm) below the seating plane of the product shall be within 0.007 in. (0.178 mm) of their true position relative to a maximum width tab. Note 5: The product may be measured by direct methods or by gage. Note 6: Tab centerline.