PXAC203302FV Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 - 2025 MHz Description The PXAC203302FV is a 330-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1880 to 2025 MHz frequency band. Features include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC203302FV Package H-37275-4 Features Single-carrier WCDMA Drive-up * Broadband internal input and output matching * Asymmetrical Doherty design - Main : P1dB = 130 W Typ - Peak : P1dB = 200 W Typ * Typical Pulsed CW performance, 2025 MHz, 28 V, combined outputs, Doherty Configuration - Output power at P1dB = 250 W - Efficiency = 55% - Gain = 16 dB * Capable of handling 10:1 VSWR @28 V, 250 W (CW) output power * Human Body Model Class 2 (per ANSI/ESDA/ JEDEC JS-001) -40 * Integrated ESD protection * Low thermal resistance -60 * Pb-free and RoHS compliant 24 60 Efficiency 20 16 40 20 Gain 12 0 8 -20 PAR @ 0.01% CCDF 4 0 25 30 35 40 45 50 c203302fv_g1 55 Efficiency (%) Peak/Average Ratio, Gain (dB) VDD = 28 V, IDQ = 900 mA, = 2025 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW Average Output Power (dBm) RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture) VDD = 28 V, IDQ = 900 mA, VGSPEAK = 1.1 V, POUT = 56 W avg, 1 = 2025 MHz, 3GPP signal, channel bandwidth = 3.84MHz, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 15 16 -- dB Drain Efficiency hD 45 49 -- % Adjancent Channel Power Ratio ACPR -- -30.5 -26 dBc All published data at TCASE = 25C unless otherwise indicated ESD: Electrostatic discharge sensitive device--observe handling precautions! Rev. 03.1, 2018-11-08 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com PXAC203302FV 2 DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 -- -- V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS -- -- 1 A VDS = 63 V, VGS = 0 V IDSS -- -- 10 A On-State Resistance (main) VGS = 10 V, VDS = 0.1 V RDS(on) -- 0.088 -- W On-State Resistance (peak) VGS = 10 V, VDS = 0.1 V RDS(on) -- 0.088 -- W Operating Gate Voltage (main) VDS = 28 V, IDQ = 900 mA VGS 2.5 2.7 2.8 V VDS = 28 V, IDQ = 0 A VGS 0.6 1.1 1.4 V VGS = 10 V, VDS = 0 V IGSS -- -- 1 A (peak) Gate Leakage Current Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS -6 to +10 V Operating Voltage VDD 0 to +32 V Junction Temperature TJ 225 C Storage Temperature Range TSTG -65 to +150 C Thermal Resistance (main, TCASE = 70C, 56.2 W CW) RqJC 0.62 C/W (peak, TCASE = 70C, 260 W CW) RqJC 0.35 C/W Ordering Information Type and Version Order Code Package Description Shipping PXAC203302FV V1 R0 PXAC203302FV-V1-R0 H-37275-4, earless flange Tape & Reel, 50 pcs PXAC203302FV V1 R250 PXAC203302FV-V1-R250 H-37275-4, earless flange Tape & Reel, 250 pcs Rev. 03.1, 2018-11-08 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com 3 PXAC203302FV Typical Performance (data taken in a production test fixture) Single-carrier WCDMA Drive-up Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 900 mA, POUT = 47.5 dBm, 3GPP WCDMA signal, PAR = 10 dB 60 -20 50 -30 40 -40 30 30 50 -50 20 27 32 37 42 47 52 20 40 Gain 35 10 c203302fv_g2 57 10 1750 0 1850 1950 CW Performance Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 900mA 2010MHz Gain 2025MHz Gain 1920MHz Gain 1880MHz Gain 2025MHz Eff 2010MHz Eff 1920MHz Eff 1880MHz Eff 24 -15 -5 -20 -10 -25 -15 -30 -20 1850 1950 2050 Frequency (MHz) Rev. 03.1, 2018-11-08 Gain (dB) 20 Return Loss (dB) ACPL & ACP Up (dBc) VDD = 28 V, IDQ = 900 mA, POUT = 47.5 dBm, 3GPP WCDMA signal, PAR = 10 dB -35 1750 30 2150 c203302fv_g3 Frequency (MHz) Average Output Power (dBm) ACPU ACPL IRL 2050 60 50 16 40 Gain 12 30 8 20 4 -25 2150 c203302fv_g4 Efficiency (%) -70 45 Efficiency 15 ACPU ACPL Efficiency -60 Gain (dB) 25 Efficiency (%) -10 Efficiency(%) ACP Up & Low (dBc) VDD = 28 V, IDQ = 900 mA, = 2025 MHz, 3GPP WCDMA signal, PAR = 10 dB, BW = 3.84 MHz 10 Efficiency 0 29 33 37 41 45 49 c203302fv_g5 53 57 0 Output Power (dBm) 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com PXAC203302FV 4 Typical Performance (cont.) CW Performance Small Signal Gain & Input Return Loss CW Performance at various VDD VDD = 28 V, IDQ = 900 mA IDQ = 900 mA, = 2025 MHz 16 -5 50 40 Gain 12 30 8 20 4 IRL 17 Gain (dB) Power Gain (dB) 20 18 60 Efficiency (%) 24 -10 Gain 16 -15 10 Input Return Loss (dB) 24V Gain 28V Gain 32V Gain 24V Eff 28V Eff 32V Eff Efficiency 0 29 33 37 41 45 49 c203302fv_g6 53 57 15 1825 0 1875 Output Power (dBm) 1925 1975 2025 -20 2075 c203302fv_g7 Frequency (MHz) Load Pull Performance Main Side Load Pull Performance - Pulsed CW signal: 160 s, 10% duty cycle, 28 V, IDQ = 800 mA, Class AB P1dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] Zl [ W] Gain [dB] POUT [dBm] POUT [W] hD [%] Zl [ W] Gain [dB] POUT [dBm] POUT [W] hD [%] 1880 2.78 - j6.42 1.33 - j2.33 18.5 52.5 179 55.1 3.40 - j1.31 21.2 50.0 100 66.7 1900 2.94 - j6.93 1.31 - j2.40 18.5 52.5 176 54.4 2.82 - j1.21 21.2 50.1 102 65.5 1920 3.81 - j7.27 1.30 - j2.46 18.5 52.4 174 53.8 2.61 - j1.25 21.0 50.4 108 65.6 2010 6.13 - j8.11 1.17 - j2.61 18.4 52.1 164 50.6 2.19 - j1.29 21.2 50.0 100 63.2 2025 8.73 - j8.92 1.29 - j2.65 18.8 52.2 168 53.9 2.19 - j1.35 21.2 50.1 101 62.9 Peak Side Load Pull Performance - Pulsed CW signal: 160 s, 10% duty cycle, 28 V, VGS = 1.4 V, Class C P1dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] Zl [ W] Gain [dB] POUT [dBm] POUT [W] hD [%] Zl [ W] Gain [dB] POUT [dBm] POUT [W] hD [%] 1880 1.47 - j3.68 2.40 - j2.40 15.4 54.0 250 54.8 1.69 - j0.40 16.5 52.0 159 65.4 1900 1.52 - j4.02 2.08 - j2.31 15.8 54.0 249 55.8 1.58 - j0.55 16.9 52.1 164 66.9 1920 1.54 - j4.21 2.29 - j2.39 15.9 53.9 247 55.6 1.44 - j0.58 17.0 51.9 156 66.7 2010 2.84 - j4.51 2.51 - j2.67 16.1 53.7 236 54.5 1.50 - j1.19 17.2 52.1 162 64.3 2025 4.34 - j5.13 2.68 - j2.58 16.4 53.8 192 55.2 1.37 - j1.22 17.3 51.9 155 64.6 Rev. 03.1, 2018-11-08 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com 5 PXAC203302FV Reference Circuit , 1880 - 2025 MHz RO4350, .020 MIL (61) RO4350, .020 MIL (61) VGS C213 C201 C101 VDD C214 C212 C103 R102 C215 C106 C203 C102 C204 C111 C206 RF_IN RF_OUT U1 C108 C112 C105 R101 C205 C210 C109 C107 C202 VGSPK C208 R103 C110 C209 C104 VDD C207 C211 PXAC203302FV_IN_01 PXAC203302FV_OUT_01 p x a c 2 0 3 3 0 2 f v _ C D _ 0 6 - 0 9 - 2 0 1 5 Reference circuit assembly diagram (not to scale) Rev. 03.1, 2018-11-08 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com PXAC203302FV 6 Reference Circuit (cont.) Reference Circuit Assembly DUT PXAC203302FV-V1 Test Fixture Part No. LTA/PXAC203302FV-V1 PCB Rogers 4350, 0.508 mm [0.020"] thick, 2 oz. copper, r = 3.66, = 1880 - 2025 MHz Find Gerber files for this test fixture on the Wolfspeed Web site at http://www.wolfspeed.com/RF Components Information Component Description Manufacturer P/N C101, C110 Capacitor, 10 F Taiyo Yuden UMK325C7106MM-T C102, C103, C104, C105 Capacitor, 15 pF ATC ATC600F150JT250XT C106, C111 Capacitor, 1 pF ATC ATC600F1R0BT250XT C107 Capacitor, 2.7 pF ATC ATC600F2R7BT250XT C108 Capacitor, 1.6 pF ATC ATC600F1R6BT250XT C109 Capacitor, 0.5 pF ATC ATC600F0R5BT250XT C112 Capacitor, 0.8 pF ATC ATC600F0R8BT250XT R101, R102 Resistor, 10 Panasonic Electronic Components ERJ-3GEYJ100V R103 Resistor, 50 Richardson C16A50Z4 U1 Hybrid Coupler Anaren X3C19P1-05S C201, C202 Capacitor, 15 pF ATC ATC600F150JT250XT C203 Capacitor, 1.6 pF ATC ATC600F1R6BT250XT C204, C205 Capacitor, 6.8 pF ATC ATC600F6R8BT250XT C206 Capacitor, 0.3 pF ATC ATC600F0R3BT250XT C207, C208, C209, C212, C213, C214 Capacitor, 10 F Taiyo Yuden UMK325C7106MM-T C210 Capacitor, 0.5 pF ATC ATC600F0R5BT250XT C211, C215 Capacitor, 220 F Cornell Dubilier Electronics (CDE) SK221M050ST Input Output Pinout Diagram (top view) D1 D2 S Main Peak G1 G2 H - 372 75- 4_ fl- D mp _pd _01 _08 -1 3-2 01 4 Pin D1 D2 G1 G2 S Description Drain device 1 (Main) Drain device 2 (Peak) Gate device 1 (Main) Gate device 2 (Peak) Source (flange) Lead connections for PXAC203302FV Rev. 03.1, 2018-11-08 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com 7 PXAC203302FV Package Outline Specifications Package H-37275-4 13.72 [.540] 2X 45 X 1.19 [45 X .047] 2x (2.03 [.080]) CL D1 D2 3.2260.508 [.127.020] CL G1 [ ] 9.14 [.360] (16.61 [.654]) G2 CL 4X R0.51 +0.38 -0.13 R.020 +.015 -.005 10.160 [.400] CL 4X 11.68 [.460] 24.40 [1.000] 2.13 [.084] SPH 1.63 [.064] 31.2420.28 [1.230.011] +0.25 4.57 -0.13 +.010 .180 -.005 [ CL ] C66065-A0004-C250-01-0027 H-37275-4-X h-37275-4-r02_PO_12-22-2014 32.26 [1.270] Rev. 03.1, 2018-11-08 S Diagram Notes--unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 - drains; G1, G2 - gates; S - source. 5. Lead thickness: 0.127 + 0.051 mm [0.005 0.002 inch]. 6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch]. 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com PXAC203302FV 8 Revision History Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2014-03-03 Advance All Proposed specification for new product development. 02 2014-06-12 Production All Specification for production-released device. 02.1 2014-06-30 Production 1 Corrected typo in features. 02.2 2016-06-22 Production 2 Updated ordering information 03 2018-07-02 Production All Converted to Wolfspeed Data Sheet 03.1 2018-11-08 Production 6 Corrected test fixture part no. For more information, please contact: 4600 Silicon Drive Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. "Typical" parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer's technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright (c) 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. WolfspeedTM and the Wolfspeed logo are trademarks of Cree, Inc. Rev. 03.1, 2018-11-08 www.wolfspeed.com