All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03.1, 2018-11-08
PXAC203302FV
Thermally-Enhanced High Power RF LDMOS FET
330 W, 28 V, 1880 – 2025 MHz
Description
The PXAC203302FV is a 330-watt LDMOS FET with an asym-
metrical design intended for use in multi-standard cellular power
amplifier applications in the 1880 to 2025 MHz frequency band.
Features include dual-path design, input matching, high gain and
thermally-enhanced package with earless flanges. Manufactured
with Wolfspeed's advanced LDMOS process, this device provides
excellent thermal performance and superior reliability.
PXAC203302FV
Package H-37275-4
RF Characteristics
Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture)
VDD = 28 V, IDQ = 900 mA, VGSPEAK = 1.1 V, POUT = 56 W avg, ƒ1 = 2025 MHz, 3GPP signal, channel bandwidth = 3.84MHz,
peak/average = 10 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain Gps 15 16 — dB
Drain Efficiency hD 45 49 — %
Adjancent Channel Power Ratio ACPR — –30.5 –26 dBc
Features
• Broadband internal input and output matching
• Asymmetrical Doherty design
- Main : P1dB = 130 W Typ
- Peak : P1dB = 200 W Typ
• Typical Pulsed CW performance, 2025 MHz, 28 V,
combined outputs, Doherty Configuration
- Output power at P1dB = 250 W
- Efficiency = 55%
- Gain = 16 dB
• Capable of handling 10:1 VSWR @28 V, 250 W
(CW) output power
• Human Body Model Class 2 (per ANSI/ESDA/
JEDEC JS-001)
• Integrated ESD protection
• Low thermal resistance
• Pb-free and RoHS compliant
-60
-40
-20
0
20
40
60
0
4
8
12
16
20
24
25 30 35 40 45 50 55
Efficiency (%)
Peak/Average Ratio, Gain (dB)
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 900 mA, ƒ = 2025 MHz,
3GPP WCDMA signal,
PAR = 10 dB, 3.84 MHz BW
Gain
Efficiency
PAR @ 0.01% CCDF
c203302fv_g1
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PXAC203302FV
DC Characteristics (each side)
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 µA
VDS = 63 V, VGS = 0 V IDSS — — 10 µA
On-State Resistance (main) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.088 — W
On-State Resistance (peak) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.088 — W
Operating Gate Voltage (main) VDS = 28 V, IDQ = 900 mA VGS 2.5 2.7 2.8 V
(peak) VDS = 28 V, IDQ = 0 A VGS 0.6 1.1 1.4 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –6 to +10 V
Operating Voltage VDD 0 to +32 V
Junction Temperature TJ 225 °C
Storage Temperature Range TSTG –65 to +150 °C
Thermal Resistance (main, TCASE = 70°C, 56.2 W CW) RqJC 0.62 °C/W
(peak, TCASE = 70°C, 260 W CW) RqJC 0.35 °C/W
Ordering Information
Type and Version Order Code Package Description Shipping
PXAC203302FV V1 R0 PXAC203302FV-V1-R0 H-37275-4, earless flange Tape & Reel, 50 pcs
PXAC203302FV V1 R250 PXAC203302FV-V1-R250 H-37275-4, earless flange Tape & Reel, 250 pcs
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PXAC203302FV
Typical Performance (data taken in a production test fixture)
0
10
20
30
40
50
60
-70
-60
-50
-40
-30
-20
-10
27 32 37 42 47 52 57
Efficiency(%)
ACP Up & Low (dBc)
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 900 mA, ƒ = 2025 MHz,
3GPP WCDMA signal, PAR = 10 dB,
BW = 3.84 MHz
ACPU
ACPL
Efficiency
c203302fv_g2 30
35
40
45
50
10
15
20
25
30
1750 1850 1950 2050 2150
Efficiency (%)
Gain (dB)
Frequency (MHz)
Single-carrier WCDMA Broadband
Performance
VDD = 28 V, IDQ = 900 mA, POUT = 47.5 dBm,
3GPP WCDMA signal, PAR = 10 dB
Efficiency
Gain
c203302fv_g3
-25
-20
-15
-10
-5
-35
-30
-25
-20
-15
1750 1850 1950 2050 2150
Return Loss (dB)
ACPL & ACP Up (dBc)
Frequency (MHz)
Single-carrier WCDMA Broadband
Performance
VDD = 28 V, IDQ = 900 mA, POUT = 47.5 dBm,
3GPP WCDMA signal, PAR = 10 dB
ACPU
ACPL
IRL
c203302fv_g4 0
10
20
30
40
50
60
0
4
8
12
16
20
24
29 33 37 41 45 49 53 57
Efficiency (%)
Gain (dB)
Output Power (dBm)
CW Performance
VDD = 28 V, IDQ = 900mA
2010MHz Gain
2025MHz Gain
1920MHz Gain
1880MHz Gain
2025MHz Eff
2010MHz Eff
1920MHz Eff
1880MHz Eff
c203302fv_g5
Efficiency
Gain
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PXAC203302FV
Typical Performance (cont.)
Load Pull Performance
Main Side Load Pull Performance – Pulsed CW signal: 160 µs, 10% duty cycle, 28 V, IDQ = 800 mA, Class AB
P1dB
Max Output Power Max Drain Efficiency
Freq
[MHz]
Zs
[W]
Zl
[W]
Gain
[dB]
POUT
[dBm]
POUT
[W]
hD
[%]
Zl
[W]
Gain
[dB]
POUT
[dBm]
POUT
[W]
hD
[%]
1880 2.78 – j6.42 1.33 – j2.33 18.5 52.5 179 55.1 3.40 – j1.31 21.2 50.0 100 66.7
1900 2.94 – j6.93 1.31 – j2.40 18.5 52.5 176 54.4 2.82 – j1.21 21.2 50.1 102 65.5
1920 3.81 – j7.27 1.30 – j2.46 18.5 52.4 174 53.8 2.61 – j1.25 21.0 50.4 108 65.6
2010 6.13 – j8.11 1.17 – j2.61 18.4 52.1 164 50.6 2.19 – j1.29 21.2 50.0 100 63.2
2025 8.73 – j8.92 1.29 – j2.65 18.8 52.2 168 53.9 2.19 – j1.35 21.2 50.1 101 62.9
Peak Side Load Pull Performance – Pulsed CW signal: 160 µs, 10% duty cycle, 28 V, VGS = 1.4 V, Class C
P1dB
Max Output Power Max Drain Efficiency
Freq
[MHz]
Zs
[W]
Zl
[W]
Gain
[dB]
POUT
[dBm]
POUT
[W]
hD
[%]
Zl
[W]
Gain
[dB]
POUT
[dBm]
POUT
[W]
hD
[%]
1880 1.47 – j3.68 2.40 – j2.40 15.4 54.0 250 54.8 1.69 – j0.40 16.5 52.0 159 65.4
1900 1.52 – j4.02 2.08 – j2.31 15.8 54.0 249 55.8 1.58 – j0.55 16.9 52.1 164 66.9
1920 1.54 – j4.21 2.29 – j2.39 15.9 53.9 247 55.6 1.44 – j0.58 17.0 51.9 156 66.7
2010 2.84 – j4.51 2.51 – j2.67 16.1 53.7 236 54.5 1.50 – j1.19 17.2 52.1 162 64.3
2025 4.34 – j5.13 2.68 – j2.58 16.4 53.8 192 55.2 1.37 – j1.22 17.3 51.9 155 64.6
-20
-15
-10
-5
15
16
17
18
1825 1875 1925 1975 2025 2075
Input Return Loss (dB)
Gain (dB)
Frequency (MHz)
CW Performance Small Signal
Gain & Input Return Loss
VDD = 28 V, IDQ = 900 mA
IRL
Gain
c203302fv_g7
0
10
20
30
40
50
60
0
4
8
12
16
20
24
29 33 37 41 45 49 53 57
Efficiency (%)
Power Gain (dB)
Output Power (dBm)
CW Performance
at various VDD
IDQ = 900 mA, ƒ = 2025 MHz
24V Gain
28V Gain
32V Gain
24V Eff
28V Eff
32V Eff
c203302fv_g6
Gain
Efficiency
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03.1, 2018-11-08
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PXAC203302FV
Reference Circuit , 1880 – 2025 MHz
Reference circuit assembly diagram (not to scale)
C212
C206
C203
C201
C214
C209
C213
C204
C208
C205
C210
C207
C202
R101
C109
R103
C106
C103
C111
C101 R102
C102
C110
C105
C104
C108
C107
C112
PXAC203302FV_IN_01
RF_IN RF_OUT
VDD
VGS
VDD
pxac203302fv_CD_06-09-2015
RO4350, .020 MIL (61)
PXAC203302FV_OUT_01
RO4350, .020 MIL (61)
U1
C215
C211
VGSPK
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PXAC203302FV
Reference Circuit (cont.)
Reference Circuit Assembly
DUT PXAC203302FV-V1
Test Fixture Part No. LTA/PXAC203302FV-V1
PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 1880 – 2025 MHz
Find Gerber files for this test fixture on the Wolfspeed Web site at http://www.wolfspeed.com/RF
Components Information
Component Description Manufacturer P/N
Input
C101, C110 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T
C102, C103, C104, C105 Capacitor, 15 pF ATC ATC600F150JT250XT
C106, C111 Capacitor, 1 pF ATC ATC600F1R0BT250XT
C107 Capacitor, 2.7 pF ATC ATC600F2R7BT250XT
C108 Capacitor, 1.6 pF ATC ATC600F1R6BT250XT
C109 Capacitor, 0.5 pF ATC ATC600F0R5BT250XT
C112 Capacitor, 0.8 pF ATC ATC600F0R8BT250XT
R101, R102 Resistor, 10 W Panasonic Electronic Components ERJ-3GEYJ100V
R103 Resistor, 50 W Richardson C16A50Z4
U1 Hybrid Coupler Anaren X3C19P1-05S
Output
C201, C202 Capacitor, 15 pF ATC ATC600F150JT250XT
C203 Capacitor, 1.6 pF ATC ATC600F1R6BT250XT
C204, C205 Capacitor, 6.8 pF ATC ATC600F6R8BT250XT
C206 Capacitor, 0.3 pF ATC ATC600F0R3BT250XT
C207, C208, C209,
C212, C213, C214
Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T
C210 Capacitor, 0.5 pF ATC ATC600F0R5BT250XT
C211, C215 Capacitor, 220 µF Cornell Dubilier Electronics (CDE) SK221M050ST
Pinout Diagram (top view)
Lead connections for PXAC203302FV
S
D1
G1
D2
G2
H-3 72 75 - 4_ f l- Dm p _pd _ 01 _0 8 -1 3-2 0 1 4
Main Peak
Pin Description
D1 Drain device 1 (Main)
D2 Drain device 2 (Peak)
G1 Gate device 1 (Main)
G2 Gate device 2 (Peak)
S Source (flange)
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03.1, 2018-11-08
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PXAC203302FV
Package Outline Specifications
Package H-37275-4
4X 11.68
[.460]
2X 45° X 1.19
[45° X .047]
C
L
C
LL
C
2x (2.03
[.080])
13.72
[.540]
9.14
[.360] (16.61
[.654])
10.160
[.400]
1.63
[.064]
2.13
[.084] SPH
3.226±0.508
[.127±.020]
.180
31.242±0.28
[1.230±.011]
S
G1 G2
D1 D2
32.26
[1.270]
+0.25
C66065-A0004-C250-01-0027 H-37275-4-X
L
C
4.57 –0.13
[+.010
-.005 ]
L
C
h-37275-4-r02_PO_12-22-2014
[ ]
4X R0.51+0.38
–0.13
R.020+.015
–.005
24.40
[1.000]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D1, D2 – drains; G1, G2 – gates; S – source.
5. Lead thickness: 0.127 + 0.051 mm [0.005 ± 0.002 inch].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
www.wolfspeed.com
Rev. 03.1, 2018-11-08
Notes
Disclaimer
Specications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights
of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat-
ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for
information purposes only. These values can and do vary in dierent applications and actual performance can vary over
time. All operating parameters should be validated by customer’s technical experts for each application. Cree products
are not designed, intended or authorized for use as components in applications intended for surgical implant into the
body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc.
For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.wolfspeed.com/RF
Sales Contact
RFSales@wolfspeed.com
RF Product Marketing Contact
RFMarketing@wolfspeed.com
919.407.7816
8
PXAC203302FV
Revision History
Revision Date Data Sheet Type Page Subjects (major changes since last revision)
01 2014-03-03 Advance All Proposed specification for new product development.
02 2014-06-12 Production All Specification for production-released device.
02.1 2014-06-30 Production 1 Corrected typo in features.
02.2 2016-06-22 Production 2 Updated ordering information
03 2018-07-02 Production All Converted to Wolfspeed Data Sheet
03.1 2018-11-08 Production 6 Corrected test fixture part no.
