APT6045BVR APT6045SVR APT6045BVRG APT6045SVRG 600V 0.45 15A *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS V BVR (R) TO -2 47 D3PAK Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. * Faster Switching * Avalanche Energy Rated * Lower Leakage * Popular TO-247 Package SVR D G S All Ratings: TC = 25C unless otherwise specified. MAXIMUM RATINGS Symbol VDSS ID Parameter APT6045B_SVR(G) UNIT 600 Volts Drain-Source Voltage 15 Continuous Drain Current @ TC = 25C Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 250 Watts 2 W/C VGSM PD TJ,TSTG 1 60 Linear Derating Factor -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 1 Volts C 300 15 (Repetitive and Non-Repetitive) Amps 30 1 4 mJ 960 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current 2 (VDS > I D(on) x RDS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 MAX Volts 15 Amps 0.45 25 Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Ohms A 100 nA 4 Volts 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com UNIT 600 (VGS = 10V, 7.5A) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) TYP 050-7205 Rev A 1-2010 Symbol Characteristic / Test Conditions DYNAMIC CHARACTERISTICS Symbol APT6045B_SVR(G) Test Conditions Characteristic MIN TYP MAX Ciss Input Capacitance 2600 3120 Coss VGS = 0V Output Capacitance 305 425 Crss Reverse Transfer Capacitance VDS = 25V f = 1 MHz 125 180 VGS = 10V 115 170 Qg Total Gate Charge Qgs Gate-Source Charge 3 VDD = 300V 15 25 ID = 15A @ 25C 52 75 Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time VGS = 15V 10 20 Rise Time VDD = 300V 9 18 ID = 15A @ 25C 38 50 RG = 1.6 6 12 TYP MAX tr td(off) Turn-off Delay Time tf Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS MIN Characteristic / Test Conditions 15 Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) 60 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -15A) 1.3 400 t rr Reverse Recovery Time (IS = -15A, dl S/dt = 100A/s) Q rr Reverse Recovery Charge (IS = -15A, dl S/dt = 100A/s) UNIT Amps Volts ns 6 C THERMAL CHARACTERISTICS Symbol Characteristic MIN RJC Junction to Case RJA Junction to Ambient TYP MAX 0.50 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 4 See MIL-STD-750 Method 3471 Starting Tj = +25C, L = 8.50mH, RG = 25, Peak IL = 15A Microsemi Reserves the right to change, without notice, the specifications and information contained herein. 0.5 0.1 0.05 0.2 0.1 0.05 0.02 0.01 0.005 Note: 0.01 PDM Z JC, THERMAL IMPEDANCE (C/W) 050-7205 Rev A 1-2010 D=0.5 SINGLE PULSE t1 t2 t Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION UNIT C/W APT6045B_SVR(G) 30 VGS=6V, 7V, 10V & 15V 24 5.5V 18 5V 12 6 4.5V ID, DRAIN CURRENT (AMPERES) 4V 00 50 100 150 200 250 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 24 VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 18 12 TJ = +125C 6 TJ = +25C TJ = -55C 00 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 12 8 4 0 25 5.5V 18 5V 12 6 4.5V 4V 1.5 NORMALIZED TO V GS 1.4 = 10V @ 7.5A 1.3 1.2 VGS=10V 1.1 VGS=20V 1.0 0.9 0 6 12 18 24 30 36 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 1.10 1.05 1.00 0.95 0.90 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -50 1.2 I = 7.5A D V GS = 10V 2.0 1.5 1.0 0.5 0.0-50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 VGS=7V, 10V 24 0 5 10 15 20 25 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 16 6V 0 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) 30 VGS=15V 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-7205 Rev A 1-2010 ID, DRAIN CURRENT (AMPERES) 30 APT6045B_SVR(G) 10,000 10S 50 OPERATION HERE LIMITED BY R (ON) DS 5,000 100S 10 Ciss C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 100 1mS 5 10mS 1 100mS TC =+25C TJ =+150C SINGLE PULSE 0.5 50 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 20 IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Crss 100 1 5 10 50 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I = 7.5A D VDS=120V VDS=300V 12 VDS=480V 8 4 0 Coss 500 DC 0.1 16 1,000 0 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 50 TJ =+150C 10 TJ =+25C 5 1 .5 .1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE D3PAK Package Outline TO-247 (B) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) Drain 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Drain 15.49 (.610) 16.26 (.640) (Heat Sink) e3 100% Sn Plated 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) Revised 4/18/95 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15(.045) 13.79 (.543) 13.99(.551) 13.41 (.528) 13.51(.532) Revised 8/29/97 11.51 (.453) 11.61 (.457) 3.50 (.138) 3.81 (.150) 0.46 (.018) 0.56 (.022) {3 Plcs} 4.50 (.177) Max. 050-7205 Rev A 1-2010 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Gate Drain 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Collector) 5.45 (.215) BSC {2 Plcs.} and Leads are Plated Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Source Drain Gate Dimensions in Millimeters (Inches) Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.