©2002 Fairchild Semiconductor Corporation
November 2002
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S Rev. C1
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S
15A, 600V Stealth™ Diode
General Description
The ISL9R1560G2, I SL9R1560P2, ISL9R1560S2 and
ISL9R156 0S3S are Stealth™ diodes optimized for lo w loss
perf ormance in high freque ncy hard s witched applic ations. The
Stealth™ family exhibits lo w reverse rec overy current
(IRM(REC)) and ex ceptionally soft reco very under typical
opera t i n g c o nd i ti ons.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
appli ca tions. The low IRM(REC) and short ta phase reduce loss
in switching tran s is to rs. Th e so ft r ec over y mi nim i zes ringi ng ,
expanding the range of conditions under which the diode may
be operated without the use of additional snubber circuitry.
Consider using the Stealth™ diode with an SMPS IGBT to
pro vide the most efficien t and highest pow er density design at
lower cost.
Formerly developmental type TA49410.
Features
• Soft R e c overy . . . . . . . . . . . . . . . . . . . . . . . .tb / ta > 1.2
• Fast Re c overy . . . . . . . . . . . . . . . . . . . . . . . . . trr < 30ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 175oC
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FW D
• Snubber Diode
Device Maximum Ratings TC = 25°C unless otherwise noted
Symbol Parameter Ratings Units
VRRM Repetitive Peak Reverse Voltage 600 V
VRWM Working Peak Reverse Voltage 600 V
VRDC Blocking Voltage 600 V
IF(AV) Av erage Rectified Forward Current (TC = 145oC) 15 A
IFRM Repetitive Peak Surge Current (20kHz Square Wave) 30 A
IFSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 200 A
K
A
CATHODE
(FLANGE) CATHODE
ANODE
JEDEC STYLE TO-262
JEDEC TO-220AC
CATHODE
(FLANGE)
ANODE
N/C
CATHODE
(FLANGE)
CATHODE
ANODE JEDEC TO-263AB
CATHODE
(BOTTOM SIDE
CATHODE
ANODE
METAL)
JEDEC STYLE TO-247
Package Symbol
©2002 Fairchild Semiconductor Corporation ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S Rev. C1
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S
Package Marking and Ordering Information
Electrical Characteristics TC = 25°C unless otherwise not e d
Off State Characteristics
On State Charac t eris ti cs
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
PDPower Dissipation 150 W
EAVL Avalanche En ergy (1A, 40mH) 20 mJ
TJ, TSTG Operating and Storage Temperature Range -55 to 175 °C
TL
TPKG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334 300
260 °C
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Device Marking Dev ice P ackage Tape Width Quantity
R1560G2 ISL9R1560G2 TO-247 N/A 30
R1560P2 ISL9R1560P2 TO-220AC N/A 50
R1560S2 ISL9R1560S2 TO-262 N/A 50
R1560S3S ISL9R1560S3S TO-263AB 24mm 800
Symbol P arameter Test Conditions Min Typ Max Units
IRInstantaneous Reverse Current VR = 600V TC = 25°C - - 100 µA
TC = 125°C--1.0mA
VFInstantaneous Forward Voltage I F = 15A TC = 25°C-1.82.2V
TC = 125°C - 1.65 2.0 V
CJJunction Capacitance VR = 10V, IF = 0A - 62 - pF
trr Reverse Recovery Time IF = 1A, dIF/dt = 100A/µs, VR = 30V - 25 30 ns
IF = 15A, dIF/dt = 100A/µs, VR = 30V - 35 40 ns
trr Reverse Recovery Time IF = 15A,
dIF/dt = 200A/µs,
VR = 390V, TC = 25°C
- 29.4 - ns
IRM(REC) Maximum Re verse Recov ery Current - 3.5 - A
QRR Reverse Recovered Charge - 57 - nC
trr Reverse Recovery Time IF = 15A,
dIF/dt = 200A/µs,
VR = 390V,
TC = 125°C
-90-ns
S Softness Factor (tb/ta)-2.0-
IRM(REC) Maximum Re verse Recov ery Current - 5.0 - A
QRR Reverse Recovered Charge - 275 - nC
trr Reverse Recovery Time IF = 15A,
dIF/dt = 800A/µs,
VR = 390V,
TC = 125°C
-52-ns
S Softness Factor (tb/ta) - 1.36 -
IRM(REC) Maximum Re verse Recov ery Current - 13.5 - A
QRR Reverse Recovered Charge - 390 - nC
dIM/dt Maximum di/dt during tb- 800 - A/µs
RθJC Thermal Resistance Junction to Case - - 1.0 °C/W
RθJA Thermal Resistance Junction to Ambient TO-247 - - 30 °C/W
RθJA Thermal Resistance Junction to Ambient TO-220 - - 62 °C/W
RθJA Thermal Resistance Junction to Ambient TO-262 - - 62 °C/W
RθJA Thermal Resistance Junction to Ambient TO-263 - - 62 °C/W
Symbol Parameter Ratings Units
©2002 Fairchild Semiconductor Corporation ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S Rev. C1
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S
Typical Performance Curves
Figure 1. Forward Current vs Forward Voltage Figure 2. Reverse Current vs Reverse Voltage
Figure 3. ta and tb Curves vs Forward Current Figure 4. ta and tb Curves vs dIF/dt
Figure 5. Maximum Reverse Recovery Current vs
Forward Current Figure 6. Maximum Reverse Recovery Current vs
dIF/dt
VF, FORWARD VOLTAGE (V)
IF, FORWARD CURRENT (A)
30
25
20
00.5 1.0 1.25 2.0 2.25
175oC
25oC
100oC
125oC
150oC
15
10
5
0.75 1.5 1.75
10
VR, REVERSE VOLTAGE (V)
IR, REVERSE CURRENT (µA)
100
100 200 500 600400
1000
1
0.1
175oC
25oC
100oC
300
4000
75oC
150oC
125oC
IF, FORWARD CURRENT (A)
0
0
20
40
60
80
100
10 30
t, RECOVERY TIMES (ns)
tb AT dIF/dt = 200A/µs, 500A/µs, 800A/µs
VR = 390V, TJ = 125°C
5152025
ta AT dIF/dt = 200A/µs, 500A/µs, 800A/µs
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
0
20
40
60
80
100
t, RECOVERY TIMES (ns)
VR = 390V, TJ = 125°C
t
b
AT I
F
= 30A, 15A, 7.5A
1000 16001400400200 600 800 1200
ta AT IF = 30A, 15A, 7.5A
IF, FORWARD CURRENT (A)
2
6
8
10
12
14
16
IRM(REC), MAX REVERSE RECOVERY CURRENT (A)
dIF/dt = 800A/µs
dIF/dt = 500A/µs
dIF/dt = 200A/µs
VR = 390V, TJ = 125°C
010 305 152025
4
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
0
5
10
15
20
25
1000 1600
VR = 390V, TJ = 125°C
I
F
= 30A
I
F
= 7.5A
I
F
= 15A
1400400200 600 800 1200
IRM(REC), MAX REVERSE RECOVERY CURRENT (A )
©2002 Fairchild Semiconductor Corporation ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S Rev. C1
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S
Figure 7. Reverse Recovery Softness Factor vs
dIF/dt Figure 8. Reverse Recovered Charge vs dIF/dt
Figure 9. Junction Capacitance vs Reve rs e
Voltage Fi gure 10. DC Current Derating Curve
Figure 11. Normalized Maximum Transient Thermal Impedance
Typical Performance Curves (Continued)
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
0.5
1.0
1.5
2.0
2.5
V
R
= 390V, T
J
= 125°C
I
F
= 30A
IF = 15A
I
F
= 7.5A
S, REVERS E RECOVERY SOFTNESS FACTOR
1000 16001400400200 600 800 1200
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
200
300
400
500
600
700 VR = 390V, TJ = 125°C
I
F
= 30A
I
F
= 15A
I
F
= 7.5A
QRR, REVERSE RECOVERED CHARGE (nC)
1000 16001400400200 600 800 1200
400
0
800
600
200
1200
VR, REVERSE VOLTAGE (V)
CJ, JUNCTION CAPACITANCE (pF)
0.1 1 10010
1000
4
0150 155 165140 175160
12
14
16
TC, CASE TEMPERATURE (oC)
IF(AV), AVERAGE FORWARD CURRENT (A)
170145
2
10
6
8
t, RECTANGULAR PULSE DURATION (s)
10-5 10-2 10-1
ZθJA, NORMALIZED
THERMAL IMPEDANCE
0.01 10-4 10-3
SINGLE PULSE
100
0.1
101
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
PDM
t1
t2
1.0
©2002 Fairchild Semiconductor Corporation ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S Rev. C1
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S
Figure 12. trr Test Circuit Figure 13. trr Waveforms and Definit ions
Figure 14. Avalanche Energy Test Circuit Figure 15. Avalanche C urrent and Voltage
Waveforms
Typical Performance Curves (Continued)
RG
L
VDD
MOSFET
CURRENT
SENSE
DUT
VGE t1
t2
VGE AMPLITUDE AND
t1 AND t2 CONTROL IF
RG CONTROL dIF/dt
+
-
dt
dIF
IFtrr
tatb
0
IRM
0.25 IRM
DUT
CURRENT
SENSE +
LR
VDD
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
-
VDD
Q1
I = 1A
L = 40mH
V
DD
= 50V
IV
t0t1t2
IL
VAVL
t
IL
Test Circuit and Waveforms
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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In Design
First Production
Full Production
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