TOSHIBA TD62591~594AP,595~598AP/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62591AP, TD62592AP, TD62593AP, TD62594AP TD62595AP, TD62595AF, TD62596AP, TD62596AF TD62597AP, TD62597AF, TD62598AP, TD62598AF 8CH SINGLE DRIVER The TD62591AP, TD62591AF Series are comprised of eight TD62591AP, TD62592AP, TD62593AP NPN Transistor Arrays. TD62594AP, TD62595AP, TD62596AP Applications include relay, hammer, lamp and display TD62597AP, TD62598AP aN (LED) drivers. ao eo ao as < 7 . eee TT Shere ry yy ' FEATURES ( Nar u 1 \ Pu? @ Output current (single output) 200mA (Max.) I an @ High sustaining voltage output 50V (Min.) DIP18-P-300-2.54D @ Low saturation voltage VcE (sat) = 0.8V e TD62595AF @lout = 150mA-inputs compatible with various type logic. TD62596AF TD62591, TD62595AP, TD62595AF : external. TD eocowar general purpose TD62592, TD62596AP, TD6G259G6AF : 10.5k01.+7V zener diode 14~25V PMOS TD62593, TD62597AP, TD62597AF : 2.7kD TTL, 5V CMOS TD62594, TD62598AP, TD62598AF : 10.5k0, SOP18-P-375-1.27 6~15V PMOS, CMOS Weight : DIP18-P-300-2.54D : 1.47g (Typ. @ Package type-AP : DIP-18pin SOP18-P-375.1 07, asgrty @ Package type-AF : SOP-18pin PIN CONNECTION (TOP VIEW) TD62591AP, TD62592AP, TD62593AP, TD62594AP TD62595AP, TD62595AF, TD62596AP, TD62596AF TD62597AP, TD62597AF, TD62598AP, TD62598AF O01 02 03 O04 O05 O68 OF O8 NC O1 02 O03 O04 07 O08 COM 16 Pe) Fr] sl 51 Ged [Lf fo Pe) FL 1 Leffel fo] JVAAAAAAKA LEE LL LF DARRA DA LILJEI IE} Ese eI MIRIPILIIIET eT) \4 15 16 \7 18 GND 961001EBA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human lite, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The products described in this document are subject to foreign exchange and foreign trade control laws. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1998-05-15 1/8TOSHIBA TD62591~594AP,595~598AP/AF SCHEMATICS (EACH DRIVER) TD62591AP TD62592AP, TD62593AP, TD62594AP OUTPUT OUTPUT INPUT TD62592AP Rin = 10.5kQ4V2=7V TD62593AP Rin =2.7kQ. TD62594AP Ry = 10.5kQ, TD62595AP, TD62595AF TD62596AP, TD62596AF, TD62597AP, TD62597AF, TD62598AP, TD62598AF COMMON OUTPUT COMMON OUTPUT INPUT TD62596AP Riy = 10.5kQ.4+Vz7=7V TD62597AP Rin =2.7kQ. TDG62598AP Riq = 10.5kQ, (Note) The input and output parasitic diodes cannot be used as clamp diodes. MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCEO 50 Vv Collector-Base Voltage VcBo 50 Vv Clamp Diode Reverse Voltage | Vp (Note 1) 50 Vv Collector Current Ic 200 mA/ch Input Voltage Vin (Note 2) -0.5~30 V Input Current lin (Note 3) 25 mA Power Dissipation PD (Note 4) |0.96 (Note 5)/1.47) W Operating Temperature Topr -40~85 a @ Storage Temperature Tstg -55~150 C (Note 1) Except TD62591~TD62594AP (Note 2) Except TD62591AP, TD62595AP, TD62595AF (Note 3) Only TD62591AP, TD62595AP, TD62595AF (Note 4) Delated above 25C in the proportion of 11.7mW//C (AP-Type), 7.7mW//C (F, AF-Type) (Note 5) SOP-18pin 1998-05-15 2/8TOSHIBA TD62591~594AP,595~598AP/AF RECOMMENDED OPERATING CONDITIONS (Ta = - 40~85C) CHARACTERISTIC SYMBOL CONDITION MIN TYP. | MAX. | UNIT Collector-Emitter Voltage VCEO _ 0 _ 50; V Collector-Base Voltage VcBo 0 50 Vv Collector Current Ic 0 150 jmA/ch Clamp Diode Reverse VR (Note 1) 7 _ 50 Vv Voltage Input Voltage VIN (Note 2) 0 25 Vv Input Current lIN (Note 3) 0 10] mA TD62592 TD62596 40) 20 Input Voltage TD62593 (Output On) | TDe2597 | IN (ON) a4} | 25) v TD62594 TD62598 70) 20 p Dissipati AP p _ _ _ 0.52 W ower Dissipation AF D = = 19:355 ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) TEST CHARACTERISTIC SYMBOL | CIR- TEST CONDITION MIN. | TYP. | MAX. | UNIT CUIT Output Leakage Current IcEX 1 |Vce=50V, Vin=0 10 | A Collector-Emitter Saturation Ic =10mA, lip =0.4mMA 0.2 Vee (sat) | 2 -S= = Vv Voltage Ic =150mA, liq =3.0mA | 0.8 . Vce=10V (Note 3) 70 _ _ 2 _ DC Current Transfer Ratio hFE Ic=10mA (Note 2) 50 = = TD62591 TD62595 Ic =50mA _ _ 0.65 TD62592 input TD62596 | ; VIN = 14V, Ic =50mA 0.9 aA nen 1D62593 INKON) VIN =2.4V, Ic =50mMA 0.9 TD62597 INF ence TD62594 TD62598 VIN =7.0V, Ic =50mMA 0.9 Turn-On Delay ton 4 |Vout=50V, RL =3300 _ 0.1 _ ps Turn-Off Delay tOFF 0.3 Ls (Note 1) Except TD62591~TD62594AP (Note 2) Except TD62591AP, TD62595AP, TD62595AF (Note 3) Only TD62591AP, TD62595AP, TD62595AF 1998-05-15 3/8TOSHIBA TEST CIRCUIT 1. ICEX OPEN 3. VIN (ON) OPEN lin Jic VIN (ON) 4. ton, toFF INPUT OPEN Voy =50V R, =3300, PULSE Rq GENERATOR (Note 3) (Note 1) CL = 15pF (Note 2) A (Note 1) Pulse width 50s, duty cycle 10% Output impedance 500, t-S5ns, te= 10ns (Note 2) See below Input Condition TD62591~594AP,595~598AP/AF 2. here, VCE (sat) OPEN lin Jc eo VcE- VCE (sat) le hee = FET tr tf |H s|- Vv [** mm lH ] 50% 50% \ 10% 10% |kKeessSsS "|" 50s 0 TYPE NUMBER RIN VIH TD62591AP, TD62595AP, TD62595AF | 2.7kQ 3V TD62592AP, TD62596AP, TD62596AF 00 15V TD62593AP, TD62597AP, TD62597AF 00 3V TD62594AP, TD62598AP, TD62598AF 00 10V (Note 3) Cy, includes probe and jig capacitance PRECAUTIONS for USING Utmost care is necessary in the design of the output line, Vcc and GND line since IC may be destroyed due to short-circuit between outputs, air contamination fault, or fault by improper grounding. 1998-05-15 4/8TOSHIBA TD62591~594AP,595~598AP/AF lin (mA) INPUT CURRENT lin (mA) INPUT CURRENT (mA) ic COLLECTOR CURRENT 8 TD62591 TD62595 lIN - VIN Ta =25C louT =25mA 0 0.2 0.4 4 0.6 INPUT VOLTAGE Viy () TD62593 TD62597 lin VIN 0 4 8 12 08 Ta=25C louT=25~100mMA INPUT VOLTAGE Viy () VCE (sat) Ic 2mA 0 0 0.2 0.4 0.6 1mA 700 uA 16 Ta =25C lIN = 500A 08 1.0 1.2 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) ) 20 14 lin (mA) INPUT CURRENT lin (mA) INPUT CURRENT (mA) louT OUTPUT CURRENT TD62592 TD62596 lin - VIN Ta=25C louT =25~100mMA 0 10 20 30 40 50 INPUT VOLTAGE Vin (V) TD62594 TD62598 lin - VIN 4 Ta=25C louT =25~100mMA 0 0 10 20 30 40 50 INPUT VOLTAGE Vin (V) louT - DUTY CYCLE 200 160 AP TYPE 120 80 8ch Active Tj= 120C 40 Ta=85C VIH = VIN (ON) MIN. 0 0 20 40 60 80 100 DUTY CYCLE (%) 1998-05-15 5/8TOSHIBA TD62591~594AP,595~598AP/AF STATIC CHARACTERISTICS Pp - Ta 5 loz | \ iu a | 0.6 N s. 100C-- | ~ A od E-0.5 S \ at | 7 KK 80 0.4 a LVcE=3V by , ao N uw ee a 60h 0.3 z iN e y 9 \ T Ee MN ao 0.2 z ' 729 2} Ip=0.1mA a 20 B XK 1 ri [ 1 | 5 06 O04 02 0 10 20 30 a BASE CURRENT | A COLLECTOR- SECU B (mA) oH EMITTER . TD62591 < VOLTAGE Vee (V) J 0 50 100 150 200 TD62595 0485 rT % AMBIENT TEMPERATURE Ta (C) tt o6F wu EMITTER | ty aay => GROUNDED Co ai Ta =25C 0.8. a a hFE, VCE (sat) Ic 10000 TD62591 5000 TD62595 3000] Ta=25C eo 2 wu I/Ip=25 (Vv) 1000 0.1 500} VCE (sat) 300 10 0.05 0.03 100 hee Veg =10V VOLTAGE Vee (sat) 2 S wi 50 30 DC CURRENT TRANSFER RATIO hfe LLECTOR-EMITTER SATURATION 0.1 03 1 3 10 30 100 300 1000 COLLECTOR CURRENT Ic (mA) 1998-05-15 6/8TOSHIBA TD62591~594AP,595~598AP/AF OUTLINE DRAWING DIP18-P-300-2.54D Unit : mm gs Z 6.440.2 CIP erro ts str rts 9 Ie 25.1MAX 24.6+0.2 . N at H| 3&8 Sy gt! Zz Te z a w to o 2.14TYP 1.440.1 0.540.1 < aianes OI GOEO Weight : 1.47g (Typ.) 1998-05-15 7/8TOSHIBA TD62591~594AP,595~598AP/AF OUTLINE DRAWING SOP 18-P-375-1.27 Unit : mm qABRAAaAe 7.0+0.2 10.3+0.3 QO Wun HUD S I cr CT 3 __ 1.17TYP) | | |. 0.420.4 [025 1.27 le 13.QMAX _ 12.540.2 l> 040.2 | 2.45MAX +0. 0.25 9.05 le tt 0.1540.1 .0.740.2 Weight : 0.50g (Typ.) 1998-05-15 8/8