fiAMOSPEC MEDIUM-POWER.HIGH VOLTAGE PNP POWER TRANSISTORS Designed for high-speed switching and linear amplifier application for high-voltage operational amplifier, switching regulators, converters, inverters, deflection stages and hig fidelity amplifiers. FEATURES: * Collector-Emitter Sustaining Voltage- VeEoisus)= 225-350V@I,= 200mA * Usable DC Current Gain to 2.0A MAXIMUM RATINGS PNP 2N6211 2N6212 2N6213 2 AMPERE POWER TRANSISTORS PNP SILICON 225 -350 VOLTS 35 WATTS Characteristic Symbol | 2N6211 | 2N6212 | 2N6213 | Unit Collector-Base Voltage Vopo 275 350 400 Vv Coliector-Emitter Voltage Voeo 225 300 350 Vv Emitter-Base Voltage Veso 6.0 Vv Collector Current - Continuous Ic 2.0 A Peak low 5.0 Base Current-Peak lp 1.0 A Total Power Dissipation @T,= 25C} PP, 35 Ww Derate above 25C 0.2 wre Operating and Storage Junction Ty: Tst c Temperature Range -65 to +200 THERMAL CHARACTERISTICS Characteristic Symbol Max UNIT Thermai Resistance Junction to Case R8jc 5.0 c FIGURE -1 POWER DERATING Pp, POWER DISSIPATIONWATTS) ono aBeRsvss 0 6&6 SN 7 100 T., TEMPERATURE( C) 125 150 175 200 "oz | PIN 1.BASE 2.EMITTER 3.COLLECTOR(CASE) DIM MILLIMETERS MIN MAX A 38.75 | 30.96 B 19.28 22.23 Cc 7968 9.28 D 11.18 12.19 E 23.20 | 26.67 F 0.92 1.08 G 1.38 1.62 H 29.90 | 30.40 I 16.64 | 17.30 J 3.88 436 K 10.67 11.182N6211,2N6212,2N6213 PNP a ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage(1) 2N6211 Veeo;jsus) 225 V (1, 200mA, I,= 0 ) 2N6212 300 2N6213 350 Collector-Emitter Sustaining Voitage 2N6211 VoeRsus) 250 V (ig= 200mA, Ip= 0, Ree= 50 2) 2N6212 325 2N6213 375 Emitter-Base Breakdown Voltage Veso Vv (I= 0.5mA, I,= 0) 2N6212 2N6213 6.0 (Ig= 1.0mA, I,= 0) 2N6211 6.0 Collector Cutoff Current lopy mA ( Veg= 250V, Vegiom= 1-5V ) 2N6211 0.5 ( Veg= 315V, Veeiom 1.5V) 2N6212 0.5 ( Vog= 360V, Veejom= 1.5V) 2N6213 0.5 Collector Cutoff Current lceo mA ( Vog= 150 V, ig= 0) Ail Types 5.0 Emitter Cutoff Current leso mA ( Vog= 6.0 V, I,= 0) 2N6211 1.0 2N6212 0.5 2N6213 0.5 ON CHARACTERISTICS ( 1 ) DC Current Gain hee ( Vog= 2.8 V p= 1.0A) 2N6211 10 100 ( Vog* 3.2 V, Ig= 1.0A) 2N6212 10 100 ( Vog= 4.0 V, I= 1.0A) 2N6213 10 100 Collector-Emitter Saturation Voltage VcE{sat) Vv (I, =1.0A, Ip= 125 mA) 2N6211 1.4 2N6212 1.6 2N6213 2.0 Base-Emitter Saturation Voltage Vee{(sat) V (l =1.0A, I= 125 mA ) 1.4 DYNAMIC CHARACTERISTICS Current Gain-Bandwidth Product (2) f, MHz (Ig= 200mA , Vog= 10 V, f = 5 MHz ) 10 Output Capacitance Cop pF ( Vog 10V, |= 0, f= 1.0 MHz ) 220 SWITCHING CHARACTERISTICS Rise Time Vocg= 200V,1,= 1A t, 0.6 us Storage Time Iaa= -Ipa= 125mA t. 2.5 us Fail Time ty 0.6 us (1) Pulse Test: Pulse width = 300 us , Duty Cycle = 2.0% (2) f= [hee F test2N6211,2N6212,2N6213 PNP a ACTIVE-REGION SAFE OPERATING AREA (SOA) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate I-Vce & limits of the transistor that must be observed for reliable 5 operation i.e., the transistor must not be subjected to & greater dissipation than curves indicate. 3 The data of SOA curve is base on T piq=200 C;T is 5 variable depending on conditions. second breakdown 8 pulse limits are valid for duty cycles to 10% provided 4 ~- -~Bondng Wire Limit : 3 ~ Second Breakdown Limit = 2N6211 Typys200C, At high case temperatures, thermal limita : Thermally Limited - tion will reduce the power that can be handled to values at T.=25C (Single Puse) less than the limitations imposed by second breakdown. 2N6213 10 20 50 400 200 500 1000 Vee , COLLECTOR EMITTER VOLTAGE (VOLTS) DC CURRENT GAIN COLLECTOR CUT-OFF REGION 10 5 ." E @ 5 5 C1 3 So : : 3 40" REVERSE & 25C Co 20 30 50) 70 100 200 300 500 700 1k 2k "02 WO 0 04 02 03 04 05 le , COLLECTOR CURRENT (mA) Vee , BASE-EMITTER VOLTAGE (VOLTS) COLLECTOR SATURATION REGION BASE CUT-OFF REGION 1 f Teas" Tya150C rl Z w Q & 5 E 9 @ 2 re fi > pf 6 5 5 Bo. F x W 2 a H 8 28 8 wy a REVERSE FORWARD. > , 05 #10 20 0 10 20 50 100 200 500 +02 +04 0 0.1 02 03 04 05 il, , BASE CURRENT (mA) Vee , BASE-EMITTER VOLTAGE (VOLTS)