DSP8-08AS
Phase leg
Standard Rectifier
1 2/4 3
Part number
DSP8-08AS
Backside: anode/cathode
FAV
F
V V1.08
RRM
8
800
=
V=V
I=A
2x
Features / Advantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
● Diode for main rectification
● For single and three phase
bridge configurations
TO-263 (D2Pak)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms Conditions of usage:
IXYS reserves the right to change limits, conditions and dimensions. 20130107bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSP8-08AS
V = V
A²s
A²s
A²s
A²s
Symbol
Definition
Ratings
typ.
max.
I
R
V
IA
V
F
1.16
R1.5 K/W
R
min.
8
V
RSM
V
10T = 25°C
VJ
T = °C
VJ
mA0.2V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
160
P
tot
100 WT = 25°C
C
RK/W
8
800
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Unit
1.35
T = 25°C
VJ
150
V
F0
V0.79T = °C
VJ
175
r
F
33 mΩ
V1.08T = °C
VJ
I = A
F
V
8
1.34
I = A
F
16
I = A
F
16
threshold voltage
slope resistance for power loss calculation only
µA
150
V
RRM
V800
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
4
junction capacitance
V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
175
120
130
50
50
A
A
A
A
100
110
72
70
800
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
900
0.25
IXYS reserves the right to change limits, conditions and dimensions. 20130107bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSP8-08AS
Ratings
Pr
odu
c
t
M
a
rk
in
g
Date Code
Part No.
Logo
Assembly Code
XXXXXXXXX
IXYS
Zyyww
000000
Assembly Line
DSP8-08A TO-220AB (3) 800
Package
T
op
°C
T
VJ
°C175
virtual junction temperature
-55
Weight g2
Symbol
Definition
typ.
max.
min.
operation temperature
Unit
F
C
N60
mounting force with clip
20
I
RMS
RMS current
25 A
per terminal
150-55
DSP8-12AS
DSP8-12S
TO-263AA (D2Pak) (3)
TO-263AB (D2Pak) (2)
1200
1200
DSP8-12A
DSP8-12AC
TO-220AB (3)
ISOPLUS220AB (3)
1200
1200
TO-263 (D2Pak)
DSP8-08AS-TUB Tube 50 465445DSP8-08AS
Similar Part Package Voltage class
DSP8-08S TO-263AB (D2Pak) (2) 800
Delivery Mode Quantity Code No.Ordering Number Marking on Product
Alternative
Ordering
DSP8-08AS 504315Tape & Reel 800DSP8-08ASStandard
T
stg
°C150
storage temperature
-55
threshold voltage
V0.79
mΩ
V
0 max
R
0 max
slope resistance *
30
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Rectifier
175 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20130107bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSP8-08AS
c2
A
A1
c
L
E
W
2x e
L1
D
1 2 3
3x b2
E1
3x b
H
D1
Supplier
Option
4
min max min max
A 4.06 4.83 0.160 0.190
A1
A2
b 0.51 0.99 0.020 0.039
b2 1.14 1.40 0.045 0.055
c 0.40 0.74 0.016 0.029
c2 1.14 1.40 0.045 0.055
D 8.38 9.40 0.330 0.370
D1 8.00 8.89 0.315 0.350
D2
E 9.65 10.41 0.380 0.410
E1 6.22 8.50 0.245 0.335
e
e1
H 14.61 15.88 0.575 0.625
L 1.78 2.79 0.070 0.110
L1 1.02 1.68 0.040 0.066
Wtyp.
0.02 0.040 typ.
0.0008 0.002
Dim.
Millimeter Inches
typ. 0.10 typ. 0.004
2.41 0.095
0.098
4.28 0.169
All dimensions conform with
and/or within JEDEC standard.
2,54 BSC 0,100 BSC
2.5
1 2/4 3
Outlines TO-263 (D2Pak)
IXYS reserves the right to change limits, conditions and dimensions. 20130107bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSP8-08AS
0.001 0.01 0.1 1
40
60
80
1
00
2 3 4 5 6 7 8 011
101
10
2
0.6 0.8 1.0 1.2 1.4 1.6
0
4
8
12
16
2
0
0 2 4 6 8 10 12
0
4
8
12
16
0 25 50 75 100 125 150 175 200
1 10 100 1000 10000
0.0
0.4
0.8
1.2
1.6
0 50 100 150 200
0
4
8
12
16
20
24
28
50 Hz, 80% VRRM
TVJ = 45°C
TVJ = 150°C
TVJ = 150°C
VR = 0 V
TVJ = 45°C
IF
[A]
VF[V]
IFSM
[A]
t [s]
I2t
[A2s]
t [ms]
Ptot
[W]
IF(AV)M [A] Tamb [°C]
IF(AV)M
[A]
TC[°C]
ZthJC
[K/W]
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current Fig. 3 I2t versus time per diode
Fig. 4 Power dissipation vs. direct output current and ambient temperature Fig. 5 Max. forward current vs.
case temperature
F
i
g
.
6
T
r
a
n
s
i
ent
th
e
r
m
a
l
i
m
pe
d
ance
j
u
n
c
t
i
o
n
t
o
c
a
s
e
t [ms]
Constants for ZthJC calculation:
i Rthi (K/W) ti(s)
1 0.155 0.0005
2 0.332 0.0095
3 0.713 0.17
4 0.3 0.8
5 0.00001 0.00001
TVJ = 150°C
125°C
25°C
DC =
1
0.5
0.4
0.33
0.17
0.08
DC =
1
0.5
0.4
0.33
0.17
0.08
RthJA:
4 K/W
8 K/W
10 K/W
12 K/W
16 K/W
20 K/W
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130107bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved