SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 4 - OCTOBER 1995
FEATURES
* 240 Volt BVDS
* Extremely low RDS(on)=4.3Ω
* Low threshol d and Fast switching
APPLICATIONS
* Earth recall and diall ing swi tches
* Electronic hook switches
* Battery powered equipment
* Telecoms and high voltage dc-dc conver tors
PARTMARKIN G DETAILS - ZVN4424
COMPLEMENTARY TYPE - ZVP4424G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 240 V
Continuous Drain Current at Tamb=25°C ID500 mA
Pulsed Drain Current IDM 1.5 A
Gate Source Voltage VGS ± 40 V
Power Dissipation at Tamb=25°C Ptot 2.5 W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ZVN4424GZVN4424G
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage BVDSS 240 V ID=1mA, V GS=0V
Gate-Source Threshold
Voltage VGS(th) 0.8 1.3 1.8 V ID=1mA, VDS= VGS
Gate-Body Leakage IGSS 100 nA VGS=± 40V, VDS=0V
On State Drain-Current ID(on) 0.8 1.4 A VDS=10V, VGS=10V
Zero Gate Voltage Drain
Current IDSS 10
100 µA
µAVDS=240 V, VGS=0V
VDS=190 V, VGS=0V, T=125°C
Static Drain-Source
On-State Resistance RDS(on) 4
4.3 5.5
6Ω
ΩVGS=10V,ID=500mA*
VGS=2.5V,ID=100mA*
Forward
Transconductance (1) (2) gfs 0.4 0.75 S VDS=10V,ID=0.5A
Input Capacitance (2) Ciss 110 200 pF
VDS=25V, VGS=0V, f=1MHz
Common Source Output
Capacitance (2) Coss 15 25 pF
Reverse Transfer
Capacitance (2) Crss 3.5 15 pF
Turn-On Delay Time (2)(3) td(on) 2.5 5 ns
VDD ≈50V, ID =0.25A, V GEN
=10V
Rise Time (2)(3) tr58ns
Turn-Off Delay Time (2)(3) td(off) 40 60 ns
Fall Time (2)(3) tf16 25 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns r ise time on a pulse generator
Spice parameter data is available upon request for this device
D
D
S
G
3 - 416 3 - 415
SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 4 - OCTOBER 1995
FEATURES
* 240 Volt BVDS
* Extremely low RDS(on)=4.3Ω
* Low threshol d and Fast switching
APPLICATIONS
* Earth recall and diall ing swi tches
* Electronic hook switches
* Battery powered equipment
* Telecoms and high voltage dc-dc conver tors
PARTMARKIN G DETAILS - ZVN4424
COMPLEMENTARY TYPE - ZVP4424G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 240 V
Continuous Drain Current at Tamb=25°C ID500 mA
Pulsed Drain Current IDM 1.5 A
Gate Source Voltage VGS ± 40 V
Power Dissipation at Tamb=25°C Ptot 2.5 W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ZVN4424GZVN4424G
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage BVDSS 240 V ID=1mA, V GS=0V
Gate-Source Threshold
Voltage VGS(th) 0.8 1.3 1.8 V ID=1mA, VDS= VGS
Gate-Body Leakage IGSS 100 nA VGS=± 40V, VDS=0V
On State Drain-Current ID(on) 0.8 1.4 A VDS=10V, VGS=10V
Zero Gate Voltage Drain
Current IDSS 10
100 µA
µAVDS=240 V, VGS=0V
VDS=190 V, VGS=0V, T=125°C
Static Drain-Source
On-State Resistance RDS(on) 4
4.3 5.5
6Ω
ΩVGS=10V,ID=500mA*
VGS=2.5V,ID=100mA*
Forward
Transconductance (1) (2) gfs 0.4 0.75 S VDS=10V,ID=0.5A
Input Capacitance (2) Ciss 110 200 pF
VDS=25V, VGS=0V, f=1MHz
Common Source Output
Capacitance (2) Coss 15 25 pF
Reverse Transfer
Capacitance (2) Crss 3.5 15 pF
Turn-On Delay Time (2)(3) td(on) 2.5 5 ns
VDD ≈50V, ID =0.25A, V GEN
=10V
Rise Time (2)(3) tr58ns
Turn-Off Delay Time (2)(3) td(off) 40 60 ns
Fall Time (2)(3) tf16 25 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns r ise time on a pulse generator
Spice parameter data is available upon request for this device
D
D
S
G
3 - 416 3 - 415
ZVN4424G
3 - 417 3 - 418
TYPICAL CHARACTERISTICS
Transfer Characteristics
I
D
- Drain Current (Amps)
VGS - Gate Source Voltage (Volts)
Saturation Characteristics
I
D
- Drain Current (Amps)
VDS - Drain Source Voltage (Volts)
Transcondu ctance v drain curren t
ID- Drain Current (Amps)
gfs-Transconductance (mS)
Transconductan ce v gate-source voltage
VGS-Gate Source Voltage (Volts)
gfs-Transconductance (mS)
Normalised RDS(on) an d VGS(th) vs Temperature
Junction Temperature (°C)
Normalised R
DS(on)
and V
GS(th)
On-resistance vs Drain Current
ID-Drain Current (Amps)
RDS(on)-Drain Sour ce On Resistance (Ω)
ID=1mA
VGS=VDS
0246810
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
300µs Pulsed Test
4V
5V
0246810
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
3V
2.5V
2V
300µs Pul s ed Test
VDS=10V
-50 -25 0 25 50 75 100 125 150
0
0.4
0.8
1.2
1.6
2.4
2.0
300µs Pulsed Test
1.0 10
1.0
10
0.10.01
100
2.5V
3V 10V
VGS=2V
ID=0.5A
VGS=10V
0
200
400
600
800
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 012345
0
200
400
600
800
300µs Pulsed Test
VDS=10V
300µs Pulsed Test
VDS=10Vz
VGS=10V
1101000.1
0
50
100
150
200
250
02468101214161820
0
2
4
6
8
10
12
14
TYPICAL CHARACTERISTICS
Q-Gate Charge (nC)
Capacitance v drain-source voltage
C-Capacitance (pF)
Crss
Coss
VDS-Drain Source Vol ta ge (Volts)
Note:VGS=0V
Ciss
VGS-Gate Source Vo ltage (Volts)
Gate charge v gate-source voltage
Note:ID=400mA
VDD= 20V
50V
100V
ZVN4424G
ZVN4424G
3 - 417 3 - 418
TYPICAL CHARACTERISTICS
Transfer Characteristics
I
D
- Drain Current (Amps)
VGS - Gate Source Voltage (Volts)
Saturation Characteristics
I
D
- Drain Current (Amps)
VDS - Drain Source Voltage (Volts)
Transcondu ctance v drain curren t
ID- Drain Current (Amps)
gfs-Transconductance (mS)
Transconductan ce v gate-source voltage
VGS-Gate Source Voltage (Volts)
gfs-Transconductance (mS)
Normalised RDS(on) an d VGS(th) vs Temperature
Junction Temperature (°C)
Normalised R
DS(on)
and V
GS(th)
On-resistance vs Drain Current
ID-Drain Current (Amps)
RDS(on)-Drain Sour ce On Resistance (Ω)
ID=1mA
VGS=VDS
0246810
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
300µs Pulsed Test
4V
5V
0246810
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
3V
2.5V
2V
300µs Pul s ed Test
VDS=10V
-50 -25 0 25 50 75 100 125 150
0
0.4
0.8
1.2
1.6
2.4
2.0
300µs Pulsed Test
1.0 10
1.0
10
0.10.01
100
2.5V
3V 10V
VGS=2V
ID=0.5A
VGS=10V
0
200
400
600
800
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 012345
0
200
400
600
800
300µs Pulsed Test
VDS=10V
300µs Pulsed Test
VDS=10Vz
VGS=10V
1101000.1
0
50
100
150
200
250
02468101214161820
0
2
4
6
8
10
12
14
TYPICAL CHARACTERISTICS
Q-Gate Charge (nC)
Capacitance v drain-source voltage
C-Capacitance (pF)
Crss
Coss
VDS-Drain Source Vol ta ge (Volts)
Note:VGS=0V
Ciss
VGS-Gate Source Vo ltage (Volts)
Gate charge v gate-source voltage
Note:ID=400mA
VDD= 20V
50V
100V
ZVN4424G
