GaAs SP4T 2.5 V High Power Switch
DC - 3.0 GHz
Rev. V1
MASW-008566
2
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Electrical Specifications: TA = 25°C, Z0 = 50 Ω 4
Parameter Test Conditions Units Min. Typ. Max.
Insertion Loss5
DC – 1 GHz
1 – 2 GHz
2 - 3 GHz
dB
dB
dB
—
—
—
0.65
0.80
1.00
0.85
1.00
—
Isolation
DC – 1 GHz
1 – 2 GHz
2 - 3 GHz
dB
dB
dB
27
21
—
29.0
23.0
18.5
—
—
—
Return Loss DC – 3 GHz dB — 20 —
IP3 Two Tone +26 dBm, 5 MHz Spacing, > 50 MHz
VC = 0 V / 2.5 V dBm — 57 —
IP2 Two Tone +26 dBm, 5 MHz Spacing, > 50 MHz
VC = 0 V / 2.5 V dBm — 81 —
P.1dB VC = 0 V / 2.5 V dBm — 38 —
2nd Harmonic 1 GHz, PIN = +34 dBm, VC = 0 V / 2.5 V dBc — -80 -71
3rd Harmonic 1 GHz, PIN = +34 dBm, VC = 0 V / 2.5 V dBc — -68 -65
Trise, Tfall 10% RF to 90% RF, 90% to 10% RF, VC = 0 V / 2.5 V µS — 0.2 —
Ton, Toff 50% control to 90% RF, 50% control to 10% RF, VC = 0 V /
2.5 V µS — 0.2 —
Transients mV — 35 —
Control Current VC = 0 V / 2.5 V, 34 dBm µA — 10 50
4. External DC blocking capacitors are required on all RF ports.
5. Insertion Loss can be optimized by varying the DC blocking capacitor value, e.g. 1000 pF for 100 - 500 MHz, 39 pF for 0.5 - 3 GHz.
V1 V2 V3 V4 ANT-
RF1
ANT-
RF2
ANT-
RF3
ANT-
RF4
1 0 0 0 On Off Off Off
0 1 0 0 Off On Off Off
0 0 1 0 Off Off On Off
0 0 0 1 Off Off Off On
Truth Table 8,9
8. Differential voltage, V (state 1) -V (state 2), must be 2.5 V
minimum.
9. 0 = -5 V to +2.5 V, 1 = -2.5 V to +5 V
Parameter Absolute Maximum
Input Power
(0.5 - 3.0 GHz, 2.5 V Control) +38 dBm
Voltage ± 8.5 volts
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C
Absolute Maximum Ratings 6,7
6. Exceeding any one or combination of these limits may cause
permanent damage to this device.
7. M/A-COM does not recommend sustained operation near
these survivability limits.