LITE-ON DCC
RELEASE
BNS-OD-FC001/A4
LITE-ON Technology Corp. / Optoelectronics
No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.
Tel: 886-2-2222-6181 Fax: 886-2-2221-1948 / 886-2-2221-0660
http://www.liteon.com/opto
Infrared
Product Data Sheet
HSDL-4251
Spec No. :DS50-2008-0024
Effective Date: 08/04/2017
Revision: B
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BNS-OD-FC002/A4
IR Emitter
HSDL-4251
1. Description
Lite-On offers a broad range of discrete infrared components for application such as remote controller, IR wireless data
transmission, security alarm & etc. The product line includes GaAs 940nm IREDs, AIGaAs high power 880nm IREDs, AIGaAs
high speed 875nm/850nm IREDs, PIN Photodiodes, Phototransistor and Photodarlingtons.
1. 1. Features
Lead (Pb) free product and RoHS compliant.
High speed: 40ns rise times
High power AlGaAs LED technology
Clear transparent color package
870nm IR emitter
1.2. Applications
Industral Infrared Equipments and application
Portable Infrared Instruments
Consumer Electronics
(Optical mouse, Infrared Remote Controllers ect)
High Speed Infrared Comunications
(IR LANs , IR Moldens , IR Dongles , etc)
2. Outline Dimensions
Notes :
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.25mm (.010") unless otherwise noted.
3. Protruded resin under flange is 1.5mm (.059") max.
4. Lead spacing is measured where the leads emerge from the package.
5.
Specifications are subject to change without notice.
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HSDL-4251
3. Absolute Maximum Ratings at TA=25℃
℃℃
℃
Parameter Symbol
MIN Max Unit Reference
Forward Current
I
FDC
100 mA [1]
Peak Forward Current
I
FPK
500 mA Fig 3
Duty Factor=20%, Pulse Width=100us
Power Dissipation
P
DISS
190 mW
Reverse Voltage
V
R
5 V IR=100uA
Storage Temperature Range
T
S
-40 100 °C
LED Junction Temperature
T
J
110 °C
Lead Soldering Temperature
[1.6mm (.063") From Body]
260°C for 5
Seconds
Operating Temperature
T
O
-40 85 °C
Notes:
1. Derate as shown in Figure 6.
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IR Emitter
HSDL-4251
4. Electrical / Optical Characteristics at TA=25℃
℃℃
℃
Parameter Symbol
Min. Typ. Max. Unit Test Condition
Radiant On-Axis Intensity IE 56 100 168 mW/sr I
F
= 100mA
Peak Emission Wavelength λ
Peak
- 870 - nm I
F
= 50mA
Spectral Line Half-Width Δλ - 45 - nm I
F
= 20mA
Forward Voltage Vf - 1.4 1.6 V I
F
= 20mA
Forward Voltage Vf - 1.5 1.9 V I
F
= 100mA
Forward Voltage
Temperature Coefficient △V/△T
- -1.44 - mV/℃ I
F
= 100mA
Viewing Angle (See Fig.6) 2θ
1/2
-
30 - deg.
Radiant On-Axis Intensity
Temperature Coefficient △IE/△T
-
-0.43 - %/℃ I
F
= 100mA
Peak Wavelength
Temperature Coefficient △λ/△T
-
0.22 - nm/℃ I
F
= 100mA
Optical Rise and all Times,
10%-90% Tr/ Tf
-
40 - ns
IFDC = 500 mA
Duty Ratio=20%
Pulse Width=125ns
Series Resistance
R
S
-
2.5 - 0hms I
F
= 100mA
Diode Capacitance
C
O
-
75 - pF 0 V,1 MHz
Thermal Resistance,
Junction to Pin
Rθ
JA
-
300 - ℃/W
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IR Emitter
HSDL-4251
5. Typical Electrical / Optical Characteristics Curves
(25℃ Ambient Temperature Unless Otherwise Noted)
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IR Emitter
HSDL-4251
6. CAUTIONS
6.1. Application
The PTDs (photodiode) described here are intended to be used for ordinary electronic equipment (such as sensor or
detector). Consult Liteon’s Sales in advance for information on applications in which exceptional reliability is required,
particularly when the failure or malfunction of the PTDs may directly jeopardize life or health (such as in aviation,
transportation, traffic control equipment, medical and life support systems and safety devices).
6.2. Storage
The storage ambient for the PTDs should not exceed 30°C temperature and 70% relative humidity. It is r ecommended that
PTDs out of their original packaging are used within three months. For extended storage out of their original packaging, it is
recommended that the PTDs be stored in a sealed container with appropriate desiccant or in desiccators with nitrogen
ambient.
6.3. Cleaning
Use alcohol-based cleaning solvents such as isopropyl alcohol to clean the PTDs if necessary.
6.4. Lead Forming & Assembly
During lead forming, the leads should be bent at a point at least 3mm from the base of PTD lens. Do not use the base of the
lead frame as a fulcrum during forming. Lead forming must be done before soldering, at normal temperature. During assembly
on PCB, use minimum clinch force possible to avoid excessive mechanical stress.
6.5. Soldering
When soldering, leave a minimum of 3mm clearance from the base of the lens to the soldering point. Dipping the lens into the
solder must be avoided. Do not apply any external stress to the lead frame during soldering while the PTD is at high
temperature.
Recommended soldering conditions:
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Soldering iron Wave soldering
Temperature
Soldering time
Position
350°C Max.
3 seconds Max.
(one time only)
No closer than 2mm
from the base of the epoxy bulb
Pre-heat
Pre-heat time
Solder wave
Soldering time
Dipping Position
100°C Max.
60 seconds Max.
260°C Max.
5 seconds Max.
No lower than 2mm from the
base of the epoxy bulb
Note: Excessive soldering temperature and/or time might result in deformation of the PTD lens or catastrophic
failure of the PTD. IR reflow is not suitable process for through hole type lamp product.
6.6. Drive Method
A PTD is a voltage-operated device. In order to ensure photocurrent uniformity on multiple PTDs connected in parallel in an
application, it is recommended that a current limiting resistor be incorporated in the drive voltage, in series with each PTD as
shown in Circuit A below.
Circuit model (A) Circuit model (B)
(A) Recommended circuit
(B) The light current of each PTD might appear different due to the differences in the I-V characteristics of those PTDs.
6.7. ESD (Electrostatic Discharge)
Static Electricity or power surge will damage the device.
Suggestions to prevent ESD damage:
Use a conductive wrist band or anti- electrostatic glove when handling these devices
All devices, equipment, and machinery must be properly grounded
Work tables, storage racks, etc. should be properly grounded
Use ion blower to neutralize the static charge which might have built up on surface of the devices plastic
lens as a result of friction between devices during storage and handing
Suggested checking list:
Training and Certification
6.7.1.1. Everyone working in a static-safe area is ESD-certified?
6.7.1.2. Training records kept and re-certification dates monitored?
Static-Safe Workstation & Work Areas
6.7.2.1. Static-safe workstation or work-areas have ESD signs?
6.7.2.2. All surfaces and objects at all static-safe workstation and within 1 ft measure less than 100V?
6.7.2.3. All ionizer activated, positioned towards the units?
6.7.2.4. Each work surface mats grounding is good?
Personnel Grounding
6.7.3.1. Every person (including visitors) handling ESD sensitive (ESDS) items wear wrist strap, heel strap or conductive shoes
with conductive flooring?
6.7.3.1. If conductive footwear used, conductive flooring also present where operator stand or walk?
6.7.3.2. Garments, hairs or anything closer than 1 ft to ESD items measure less than 100V*?
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6.7.3.3. Every wrist strap or heel strap/conductive shoes checked daily and result recorded for all DLs?
6.7.3.4. All wrist strap or heel strap checkers calibration up to date?
Device Handling
6.7.4.1. Every ESDS items identified by EIA-471 labels on item or packaging?
6.7.4.2. All ESDS items completely inside properly closed static-shielding containers when not at static-safe workstation?
6.7.4.3. No static charge generators (e.g. plastics) inside shielding containers with ESDS items?
6.7.4.4. All flexible conductive and dissipative package materials inspected before reuse or recycle?
Others
6.7.5.1. Audit result reported to entity ESD control coordinator?
6.7.5.2. Corrective action from previous audits completed?
6.7.5.3. Are audit records complete and on file?
7. Reliability Test
Classification
Test Item Test Condition Reference Standard
Endurance
Test
High Temperature
High Humidity
Reverse Bias
Ta= 65
°
C
RH= 95% VR=5V
Test Time= 500HRS
MIL-STD-750D:1026 (1995)
MIL-STD-883G:1005 (2006)
High Temperature
High Humidity
storage
Ta= 65
°
C
RH= 95%
Test Time= 240HRS
MIL-STD-202G:103B (2002)
JEITA ED-4701:100 103 (2001)
High Temperature
Storage Ta= 105±5
°
C
Test Time= 1000HRS
MIL-STD-750D:1031 (1995)
MIL-STD-883G:1008 (2006)
JEITA ED-4701:200 201 (2001)
Low Temperature
Storage
Ta= -55±5
°
C
Test Time=1000HRS JEITA ED-4701:200 202 (2001)
Environmental
Test
Temperature
Cycling
-55°C ～ 25°C ～ 105°C ～ 25°C
30mins 5mins 30mins 5mins
Test time: 30 Cycles
MIL-STD-750D:1051 (1995)
MIL-STD-883G:1010 (2006)
JEITA ED-4701:100 105 (2001)
JESD22-A104C (2005)
Thermal
Shock
105 ± 5°C ～ -55°C ± 5°C
10mins 10mins
Test time: 20 Cycles
MIL-STD-750D:1056 (1995)
MIL-STD-883G:1011 (2006)
MIL-STD-202G:107G (2002)
JESD22-A106B (2004)
Solder
Resistance
T.sol = 260 ± 5°C
Dwell Time= 10±1 seconds
3mm from the base of the epoxy bulb
MIL-STD-750D:2031(1995)
JEITA ED-4701: 300 302 (2001)
Solder Ability
T. sol = 245 ± 5°C
Dwell Time= 5 ± 0.5 seconds
(Lead Free Solder, Coverage ≧95% of
the dipped surface)
MIL-STD-750D:2026 (1995)
MIL-STD-883G:2003 (2006)
MIL-STD-202G:208H (2002)
IPC/EIA J-STD-002 (2004)
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IR Emitter
HSDL-4251
8. Others
The appearance and specifications of the product may be modified for improvement, without prior notice.