USB50812C-A-TR7 - MICROSEMI

USB50803C(-A) – USB50824C(-A)

Available

Bidirectional Low Capacitance

TVSarray

DESCRIPTION

This USB50803C(-A) – USB50824C(-A) family of Transient Voltage Suppressor (TVS) arrays

comes in an SO-8 package and can provide protection to 2 bidirectional data or interface lines. It is

designed for use in applications where very low capacitance protection is required at the board

level from voltage transients caused by electrostatic discharge (ESD) as defined in IEC 61000-4-2,

electrical fast transients (EFT) per IEC 61000-4-4 and secondary effects of lightning.

Using the schematic on the last page, pins 1 & 2 are tied together for the first protected line,

and pins 7 & 8 are tied together to ground. The same would occur for a second protected line

where pins 3 & 4 tied together and pins 5 & 6 tied together to the ground. These connections may

be switched in polarity since the electrical features are the same in each anti-parallel (opposite

facing) leg when the pins are tied together in this manner for bidirectional protection. The device

with an “-A” suffix is opposite in polarity for each pin-to-pin leg (see schematics). This provides no

functional difference for bidirectional TVS protection with the noted pins tied together as described

above. But the difference is significant if each leg is being used separately for unidirectional

applications.

These TVS arrays have a peak power rating of 500 watts for an 8/20 µsec pulse. This array is

suitable for protection of sensitive circuitry such as TTL, CMOS DRAM’s, SRAM’s, HCMOS, HSIC

microprocessors, Universal Serial Bus (USB) and I/O transceivers.

SO-8 Package

Also available:

Unidirectional version

USB50803 – USB50824

Important: For the latest information, vis it our website http://www.microsemi.com.

FEATURES

• Provides ele ctrically isolated protection for up to 2 bidirectional lines.

• Surge protection per IEC 61000-4-2 and IEC 61000-4-4.

• UL 94V-0 flammabili ty classification.

• Ultra low capacitance; 3 pF per line pair.

• Ultra low leakage current.

• RoHS compliant versions available.

APPLICATIONS / BENEFITS

• EIA-RS485 data rates: 5 Mbs

• 10 Base T Ethernet.

• USB data rate: 900 Mbs

MAXIMUM RATINGS

MSC – Lawrence

6 Lake Street,

Lawrence, MA 01841

Tel: 1-800-446-1158 or

(978) 620-2600

Fax: (978) 689-0803

MSC – Ireland

Gort Road Business Park,

Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044

Fax: +353 (0) 65 6822298

Website:

www.microsemi.com

Parameters/Test Conditions

Symbol

Value

Unit

Junction and Storage Temperature

TJ and TSTG

-55 to +150

ºC

Peak Pulse Power @ 8/20

µ

s (see figure 1)

PPP

500

W

Impulse Repetition Rate

df

< .01

%

Capacitance (f = 1 MHz) @ 0 V

C

3

pF

Solder Temperature @ 10 s

TSP

260

oC

USB50803C(-A) – USB50824C(-A)

MECHANICAL and PACKAGING

• CASE: Molded SO-8 surface mount.

• TERMINALS: Tin-lead or RoHS compliant anne ale d matte-tin plating.

• MARKING: Logo, device marking code (see electrical characteristics table), date code.

• POLARITY: Pin #1 marked by dot on top of package.

• TAPE & REEL option: Per EIA standard 481. Consult factory for quantities. Carrier tubes with a quantity of 95 pieces are

standard.

• WEIGHT: Approximately 0.066 grams.

• See Package Dimensions on last page.

PART NOMENCLATURE

USB 5 08 03 C -A e3

USB Rated Product

PPP Rating (x 100 W)

8 Pin Package

Rated Standoff Voltage

(VWM)

(See Electrical Characteristics

table)

RoHS Compli ance

e3 = RoHS Compliant

Blank = non-RoHS Compliant

Opposite polarity of Non-A

suffix version in each leg

Bidirectional Designator

SYMBOLS & DEFINITIONS

Symbol

Definition

VWM

Stand Off Voltage: Maximum dc voltage that can be applied over the operating temperature range.

Vwm must be selected to be equal or be greater than the operating voltage of the line to be protected.

V(BR)

Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current

VC

Clamping Vol tage: Maximum clamping voltage across the TVS device when subjected to a given current at a pulse

time of 20

µ

s.

ID

Standby Current: Leakage current at VWM.

C

Capacitance: Capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in picofarads.

USB50803C(-A) – USB50824C(-A)

ELECTRICAL CHARACTERISTICS

PART

NUMBER DEVICE

MARKING*

STAND-

OFF

VOLTAGE

VWM

Volts

BREAKDOWN

VOLTAGE

VBR

@1 mA

Volts

CLAMPING

VOLTAGE

VC

@ 1 Amp

(Figure 2)

Volts

CLAMPING

VOLTAGE

VC

@ 5 Amp

(Figure 2)

Volts

STANDBY

CURRENT

ID

@ VWM

µA

CAPACITANCE

(f = 1 MHz)

C

@ 0 V

pF

TEMPERATURE

COEFFICIENT

OF VBR

α

VBR

mV/°C

MAX

MIN

MAX

USB50803C

3C

3.3 4 8 11 200 3 -5

USB50803C-A

U3CA

USB50805C

5C

5.0 6.0 10.8 13 40 3 1

USB50805C-A

U5CA

USB50812C

12C

12.0 13.3 19 26 1 3 8

USB50812C-A

U12CA

USB50815C

15C

15.0 16.7 24 32 1 3 11

USB50815C-A

U15CA

USB50824C

24C

24.0 26.7 43 57 1 3 28

USB50824C-A

U24CA

* Device marking will have an “e3” suffix added for the RoHS compliant option, e.g. U3CAe3, 5Ce3, U12CAe3, 15Ce3, and U24CAe3.

NOTE: Transient Voltage Suppressor (TVS) products are normally selected based on their standoff voltage Vwm. The selected

voltage should be equal to or greater than the peak operating voltage of the circuit to be protected.

USB50803C(-A) – USB50824C(-A)

GRAPHS

tp - Pulse Dur at ion - µs

FIGURE 1

Peak Pulse Power vs Pulse Time

t – Time in microseconds

FIGURE 2

Pulse Waveform

PPP – Peak Pulse Power - W

IPP – Peak Pulse Current - %IPP

USB50803C(-A) – USB50824C(-A)

PACKAGE DIMENSIONS

PAD LAYOUT

1.

2. PAD LAYOUT:

3.

Dimensions

Ltr

Inch

Millimeters

Min

Max

Min

Max

A

0.188

0.197

4.77

5.00

B

0.150

0.158

3.81

4.01

C

0.053

0.069

1.35

1.75

D

0.011

0.021

0.28

0.53

F

0.0160

0.050

.041

1.27

G

0.050 BSC

1.27 BSC

J

0.006

0.010

0.15

0.25

K

0.004

0.008

0.10

0.20

L

0.189

0.206

4.80

5.23

P

0.228

0.244

5.79

6.19

USB50803C(-A) – USB50824C(-A)

SCHEMATICS

1.

2.

3. USB50803C thru USB50824C USB50803C-A thru USB50824C-A