Semiconductor Group 1 04.96
NPN Silicon AF Transistor BC 846 W ... BC 850 W
Features
●For AF input stages and driver applications
●High current gain
●Low collector-emitter saturation voltage
●Low noise between 30Hz and 15 kHz
●Complementary types: BC 856 W, BC 857 W,
BC 858 W,BC 859 W,
BC 860 W (PNP)
Type Marking Ordering code
(tape and reel) Pin Configuration
123Package
BC 846 AW
BC 846 BW
BC 847 AW
BC 847 BW
BC 847 CW
BC 848 AW
BC 848 BW
BC 848 CW
BC 849 BW
BC 849 CW
BC 850 BW
BC 850 CW
1 As
1 Bs
1 Es
1 Fs
1 Gs
1 Js
1 Ks
1 Ls
2 Bs
2 Cs
2 Fs
2 Gs
Q62702-C2319
Q62702-C2279
Q62702-C2304
Q62702-C2305
Q62702-C2306
Q62702-C2307
Q62702-C2308
Q62702-C2309
Q62702-C2310
Q62702-C2311
Q62702-C2312
Q62702-C2313
BECSOT 323
SOT 323
SOT 323
SOT 323
SOT 323
SOT 323
SOT 323
SOT 323
SOT 323
SOT 323
SOT 323
SOT 323
BC 846W ... BC 850W
Semiconductor Group 2
Maximum Ratings
Description Symbol Unit
Collector-emitter voltage VCEO V
Collector-base voltage VCBO V
Collector-emitter voltage VCES V
Collector current ICmA
Total power dissipation, TS=115 ˚C Ptot mW
Junction temperature Tj˚C
Storage temperature range Tstg –65 to 150 ˚C
Thermal Resistance
Junction - ambient1) Rth JA ≤ 240 K/W
Emitter-base voltage VEBO V
Collector peak current ICM mA
100
665
250
150
80 50 30
200
BC846W BC 847 W
BC 849 W BC 848 W
BC 840 W
Junction - soldering point Rth JS ≤ 105 K/W
65 45 30
80 50 30
1)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/1 cm2 Cu.
BC 846W ... BC 850W
Semiconductor Group 3
Characteristic at TA = 25 ˚C, unless otherwise specified.
DC current gain
I
C = 10 µA, VCE = 5 V BC 846 AW ... BC 848 AW
BC 846 BW ... BC 850 BW
BC 847 CW ... BC 850 CW
I
C = 2 mA, VCE = 5 V BC 846 AW ... BC 848 AW
BC 846 BW ... BC 850 BW
BC 847 CW ... BC 850 CW
VCollector-emitter breakdown voltage
I
C = 10 mA BC 846 W
BC 847 W, BC 850 W
BC 848 W, BC 849 W
V(BR)CEO 65
45
30
–
–
–
–
–
–
nA
µA
Collector-base cutoff current
VCB = 30 V
VCB = 30 V, TA= 150 ˚C
ICBO –
––
–15
5
UnitRatingsDescription Symbol
min. typ. max.
DC Characteristics
V
Collector-base breakdown voltage1)
I
C = 100 µA BC 846 W
BC 847 W, BC 850 W
BC 848 W, BC 849 W
V(BR)CBO 80
50
30
–
–
–
–
–
–
VEmitter-base breakdown voltage
I
E = 10 µA BC 846 W, BC 847 W
BC 848 W, BC 849 W
BC 850
V(BR)EBO 6
5–
––
–
mV
Collector-emitter saturation voltage1)
I
C = 10 mA, IB = 0.5 mA
I
C = 100 mA, IB = 5 mA
VCEsat –
–90
900 250
650
–hFE 140
250
480
180
290
520
–
–
–
220
450
800
V
Collector-emitter breakdown voltage
I
C = 10 µA, VBE = 0 BC 846 W
BC 847 W, BC 850 W
BC 848 W, BC 849 W
V(BR)CBO 80
50
30
–
–
–
–
–
–
mV
Base-emitter saturation voltage1)
I
C = 10 mA, IB = 0.5 mA
I
C = 100 mA, IB = 5 mA
VCEsat –
–700
900 –
–
mV
Base-emitter voltage1)
I
C = 2 mA, VCE = 0.5 mA
I
C = 10 mA, VCE = 5 mA
VCEsat 580
–660
–700
770
–
–
–
110
200
420
1)Pulse test : t≤300 µs, D= 2 %.
BC 846W ... BC 850W
Semiconductor Group 4
Characteristics at TA = 25 ˚C, unless otherwise specified.
Curves see BC 846 ... BC 840
MHzTransition frequency
I
C = 20 mA, VCE = 5 V, f = 100 MHz fT– 250 –
µVEquivalent noise voltage
I
C= 0.2 mA, VCE = 5 V, RS = 2 kΩ
f = 10 Hz ... 50 Hz BC 850 W
Vn
– – 0.135
UnitRatingsDescription Symbol
min. typ. max.
AC Characteristics
pFOutput capacitance
VCB = 10 V, f = 1 MHz Cobo –2–
kΩShort-circuit input impedance
I
C = 2 mA, VCE = 5 V, f = 1 kHz
BC 846 AW ... BC 849 AW
BC 846 BW ... BC 850 BW
BC 847 CW ... BC 850 CW
h11e
–
–
–
2.7
4.5
8.7
–
–
–
pFInput capacitance
VEB = 0.5 V, f = 1 MHz Cibo –10–
10–4
Open-circuit reverse voltage transfer ratio
I
C = 2 mA, VCE = 5 V, f = 1 kHz
BC 846 AW ... BC 849 AW
BC 846 BW ... BC 850 BW
BC 847 CW ... BC 850 CW
h12e
–
–
–
1.5
2.0
3.0
–
–
–-Short-circuit forward current transfer ratio
I
C = 2 mA, VCE = 5 V, f = 1 kHz
BC 846 AW ... BC 849 AW
BC 846 BW ... BC 850 BW
BC 847 CW ... BC 850 CW
h21e
–
–
–
200
330
600
–
–
–µSOpen-circuit output admittance
I
C = 2 mA, VCE = 5 V, f = 1 kHz
BC 846 AW ... BC 849 AW
BC 846 BW ... BC 850 BW
BC 847 CW ... BC 850 CW
h22e
–
–
–
18
30
60
–
–
–dBNoise figure
I
C = 0.2 mA, VCE = 5 V, RS = 2 kΩBC 849 W
f = 30 Hz ... 15 kHz BC 850 W
f = 1 kHz, ∆f = 200 Hz BC 849 W
BC 850 W
F
–
–
–
1.4
1.4
1.2
1.0
4
3
4
4
BC 846W ... BC 850W
Semiconductor Group 5
Total power dissipation Ptot =f(TA*; TS)
* Package mounted on epoxy
Permissible pulse load Ptot max/Ptot DC = f (tp)
Collector-base capacitance CCB0 =f(VCB0)
Emitter-base capacitance CEB0 =f(VEB0)
Transition frequency fT=f(IC)
VCE = 5 V
BC 846W ... BC 850W
Semiconductor Group 6
Collector cutoff current ICB0 =f(TA)
VCB = 30 V
DC current gain hFE = f (IC)
VCE = 5 V
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 20
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 20
BC 846W ... BC 850W
Semiconductor Group 7
h parameter he=f(IC)normalized
VCE = 5 V
Noise figure F=f(VCE)
IC = 0.2 mA, RS = 2 kΩ,f = 1 kHz
h parameter he=f(VCE)normalized
IC=2mA
Noise figure F=f(f)
IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ
BC 846W ... BC 850W
Semiconductor Group 8
Noise figure F=f(IC)
VCE = 5 V, f = 120 Hz
Noise figure F=f(IC)
VCE = 5 V, f = 10 kHz
Noise figure F=f(IC)
VCE = 5 V, f = 1 kHz
