SPICE MODELS: MMBTA55 MMBTA56 MMBTA55 / MMBTA56 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features * * * * Epitaxial Planar Die Construction Complementary NPN Types Available (MMBTA05 / MMBTA06) Ideal for Medium Power Amplification and Switching Also Available in Lead Free Version SOT-23 * * * * * * * * B Case: SOT-23, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Also Available in Lead Free Plating (Matte Tin Finish). Please see Ordering Information, Note 4, on Page 2 Terminal Connections: See Diagram MMBTA55 Marking (See Page 2): K2H MMBTA56 Marking (See Page 2): K2G Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approx.) Maximum Ratings Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 a 0 8 C Mechanical Data * * Dim A TOP VIEW B C E D E G H K J M L C B E All Dimensions in mm @ TA = 25C unless otherwise specified Symbol MMBTA55 MMBTA56 Unit Collector-Base Voltage Characteristic VCBO -60 -80 V Collector-Emitter Voltage VCEO -60 -80 V Emitter-Base Voltage VEBO -4.0 V IC -500 mA Pd Collector Current - Continuous (Note 1) 300 mW RqJA 417 C/W Tj, TSTG -55 to +150 C Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Electrical Characteristics @ TA = 25C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage MMBTA55 MMBTA56 V(BR)CBO -60 -80 3/4 V IC = -100mA, IE = 0 Collector-Emitter Breakdown Voltage MMBTA55 MMBTA56 V(BR)CEO -60 -80 3/4 V IC = -1.0mA, IB = 0 V(BR)EBO -4.0 3/4 V Emitter-Base Breakdown Voltage Collector Cutoff Current MMBTA55 MMBTA56 MMBTA55 MMBTA56 IE = -100mA, IC = 0 VCB = -60V, IE = 0 VCB = -80V, IE = 0 VCE = -60V, IBO = 0V VCE = -80V, IBO = 0V ICBO 3/4 -100 nA ICEX 3/4 -100 nA hFE 100 3/4 3/4 IC = -10mA, VCE = -1.0V IC = -100mA, VCE = -1.0V Collector-Emitter Saturation Voltage VCE(SAT) 3/4 -0.25 V IC = -100mA, IB = -10mA Base- Emitter Saturation Voltage VBE(SAT) 3/4 -1.2 V IC = -100mA, VCE = -1.0V fT 50 3/4 MHz VCE = -1.0V, IC = -100mA, f = 100MHz Collector Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect. DS30054 Rev. 6 - 2 1 of 3 www.diodes.com MMBTA55 / MMBTA56 a Diodes Incorporated Ordering Information Notes: (Note 3) Device Packaging Shipping MMBTA55-7 MMBTA56-7 SOT-23 3000/Tape & Reel 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 4. For Lead Free version (with Lead Free terminal finish) part number, please add "-F" suffix to part number above. Example: MMBTA56-7-F. Marking Information YM K2x = Product Type Marking Code, ex: K2H = MMBTA55 YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K2x Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 0.25 PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 IC IB = 10 0.20 TA = 25C 0.15 0.10 TA = 150C TA = -50C 0.05 50 0 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature DS30054 Rev. 6 - 2 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current 2 of 3 www.diodes.com MMBTA55 / MMBTA56 1.0 VBE(ON), BASE EMITTER VOLTAGE (V) 1000 VCE = 5V hFE, DC CURRENT GAIN (NORMALIZED) TA = 150C 100 TA = 25C TA = -50C 0.9 VCE = 5V 0.8 TA = -50C 0.7 TA = 25C 0.6 0.5