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Page <1> V1.025/02/13
Surface Mount
Schottky Barrier Diode
Features:
• Low Forward Voltage Drop
• Fast Switching
• Ultra-Small Surface Mount Package
• PN Junction Guard Ring For Transient and ESD Protection
Applications:
Schottky barrier diodes
Max. Rating @ T
= 25°C unless otherwise specied
Parameter Symbol Value Unit
Peak repetitive peak reverse voltage
Working peak
DC reverse voltage
30 V
Forward continuous voltage
200 mA
Repetitive peak forward voltage
300 mA
Non-repetitive peak forward surge current @t<1.0s I
600 mA
Power dissipation P
150 mW
Thermal resistance, junction to ambient Rθ
833 °C/W
Junction and storage temperature Tj, Tstg -65 to +150 °C
Electrical Characteristics @ T
= 25°C unless otherwise specied
Parameter Symbol Conditions Min. Max. Unit
Reverse breakdown voltage V
I
= 100μA 30 - V
Leakage current
V
= 25V - 2 μA
Forward voltage V
I
= 0.1mA
I
= 1mA
I
= 10mA
I
= 30mA
I
= 100mA
-
240
320
400
500
1,000
mV
Typical total capacitance
V
= 1V, f=1MHz - 10 pF
Reverse recovery time trr I
= I
= 10mA
I
= 0.1mA, R
= 100Ω - 5 ns