MICROWAVE POWER GaAs FET TIM5964-12UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=41.5dBm at 5.9GHz to 6.4GHz n HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS Output Power at 1dB Gain SYMBOL CONDITIONS P1dB UNIT MIN. TYP. MAX. dBm 40.5 41.5 dB 9.0 10.0 A 3.2 3.8 Compression Point Power Gain at 1dB Gain G1dB Compression Point VDS= 10V f = 5.9 to 6.4GHz Drain Current IDS1 Gain Flatness G dB 0.6 Power Added Efficiency add % 40 3rd Order Intermodulation IM3 dBc -44 -47 Distortion Drain Current Channel Temperature Rise Two-Tone Test Po=30.5dBm IDS2 (Single Carrier Level) A 3.2 3.8 Tch (VDS X IDS + Pin - P1dB) C 80 CONDITIONS VDS= 3V IDS= 4.0A VDS= 3V IDS= 40mA VDS= 3V VGS= 0V IGS= -140A UNIT mS MIN. MAX. TYP. 2500 V -1.0 -2.5 -4.0 A 7.2 V -5 Channel to Case C/W 2.0 2.4 X Rth(c-c) Recommended gate resistance(Rg) : Rg= 100 (MAX.) ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CHARACTERISTICS Transconductance Pinch-off Voltage SYMBOL gm VGSoff Saturated Drain Current IDSS Gate-Source Breakdown Voltage VGSO Thermal Resistance Rth(c-c) uThe information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Oct. 2006 TIM5964-12UL ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 10.0 Total Power Dissipation (Tc= 25 C ) PT W 62.5 Channel Temperature Tch C 175 Storage Tstg C -65 to +175 PACKAGE OUTLINE (2-16G1B) 0.70.15 2.5 MIN. Unit in mm 4 - C1.0 (1) (1) Gate (2) Source (2) 2.5 MIN. 2.60.3 (2) 17.4 0.4 8.00.2 (3) Drain (3) 20.40.3 5.5 MAX. 2.4 0.3 0.2 MAX. 16.4 MAX. 1.4 0.3 +0.1 0.1 -0.05 24.5 MAX. HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 TIM5964-12UL RF PERFORMANCE Output Power vs. Frequency 44 VDS= 10V IDS 3.2A Pin= 31.5dBm 42 41 40 3 9 5.7 5.8 5.9 6 6.1 6.2 6.3 6.4 6.5 6.6 Frequency (GHz) Output Power vs. Input Power 43 90 f= 6.15GHz VDS= 10V IDS 3.2A 42 80 Po 41 70 40 60 3 9 50 add 3 8 40 3 7 3 0 3 6 20 3 5 10 3 4 0 24 26 28 3 0 P in (dB m ) 3 3 2 3 4 add (%) P o (dB m ) P o (dB m ) 43 TIM5964-12UL Power Dissipation vs. Case Temperature 100 P T (W ) 80 60 40 20 0 0 40 80 120 T c ( 160 200 ) IM3 vs. Output Power Characteristics - 20 VDS= 10V IDS 3.2A f= 6.15GHz f= 5MHz I M 3 (dB c) - 3 0 - 40 - 50 - 60 25 27 29 3 1 3 3 Po(dBm), Single Carrier Level 4 3 5