MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM5964-12UL
TECHNICAL DATA
FEATURES
n
HIGH POWER
n
BROAD BAND INTERNALLY MATCHED FET
P1dB=41.5dBm at 5.9GHz to 6.4GHz
n
HIGH GAIN
n
HERMETICALLY SEALED PACKAGE
G1dB=10.0dB at 5.9GHz to 6.4GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Output Power at 1dB Gain
Compression Point P
1dB
dBm 40.5 41.5
Power Gain at 1dB Gain
Compression Point G
1dB
dB 9.0 10.0
Drain Current I
DS1
A
3.2 3.8
Gain Flatness
∆
G
dB
±
0.6
Power Added Efficiency
η
add
V
DS
= 10
V
f
= 5.9 to 6.4GHz
%
40
3rd Order Intermodulation
Distortion IM
3
dBc -44 -47
Drain Current I
DS2
Two-Tone Test
Po=30.5dBm
(Single Carrier Level)
A
3.2 3.8
Channel Temperature Rise
∆
Tch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
°
C
80
Recommended gate resistance(Rg) : Rg= 100
Ω
(MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25
°
C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Transconductance
gm
V
DS
=
3V
I
DS
= 4.0A
mS
2500
Pinch-off Voltage V
GSoff
V
DS
=
3V
I
DS
= 40mA
V -1.0 -2.5 -4.0
Saturated Drain Current I
DSS
V
DS
=
3V
V
GS
= 0V
A
7.2
Gate-Source Breakdown
Voltage V
GSO
I
GS
= -140
µ
A
V -5
Thermal Resistance R
th(c-c)
Channel to Case
°
C/W
2.0 2.4
u
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Oct. 2006
2
TIM5964-12UL
ABSOLUTE MAXIMUM RATINGS ( Ta= 25
°
C )
CHARACTERISTICS SYMBOL UNIT RATING
Drain-Source Voltage V
DS
V 15
Gate-Source Voltage V
GS
V -5
Drain Current I
DS
A 10.0
Total Power Dissipation (Tc= 25
°
C ) P
T
W 62.5
Channel Temperature T
ch
°
C 175
Storage T
stg
°
C -65 to +175
PACKAGE OUTLINE (2-16G1B)
Unit in mm
(1) Gate
(2) Source
(3) Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260
°
C.
5.5 MAX.
0.2 MAX.
0.7
±
0.15
1.4
±
0.3
2.4
±
0.3
0.1
+0.1
-
0.05
2.5 MIN.
2.5 MIN.
17.4
±
0.4
8.0
±
0.2
2.6
±
0.3
20.4
±
0.3
24.5 MAX.
4
–
C1.0
(1)
(2)
(2)
(3)
16.4 MAX.
3
TIM5964-12UL
3 9
40
41
42
43
44
5.7 5.8 5.9 6 6.1 6.2 6.3 6.4 6.5 6.6
Po(dBm)
V
DS
= 10V
I
DS
≅
3.2A
Pin= 31.5dBm
Output Power vs. Frequency
Frequency (GHz)
Po
η add
3 4
3 5
3 6
3 7
3 8
3 9
40
41
42
43
24 26 28 3 0 3 2 3 4
Pin(dB m )
Po(dBm )
0
10
20
3 0
40
50
60
70
80
90
η add(%)
Output Power vs. Input Power
f= 6.15GHz
V
DS
= 10V
I
DS
≅
3.2A
RF PERFORMANCE
4
TIM5964-12UL
0
20
40
60
80
100
0 40 80 120 160 200
Tc(℃ )
P
T
(W )
Power Dissipation vs. Case Temperature
- 60
- 50
- 40
-30
- 20
25 27 29 3 1 3 3 3 5
I M
3
(dBc)
V
DS
= 10V
I
DS
≅
3.2A
f= 6.15GHz
∆
f= 5MHz
IM3 vs. Output Power Characteristics
Po(dBm), Single Carrier Level
