MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# MJE172 PNP MJE182 NPN Features * Silicon Power Transistor This device is designed for low power audio amplifier and low current, high speed switching applications. Maximum Ratings Symbol V CEO V CBO V EBO IC IB TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Peak Base Current Operating Junction Temperature Storage Temperature Rating 80 100 7.0 3.0 6.0 1.0 -55 to +150 -55 to +150 Unit V V V Max 1.5 0.012 12.5 0.1 10 83.4 Unit W W/OC W W/OC O C/W O C/W TO-126 A K A D A O C O C R E B Thermal Characteristics Symbol PD PD RJ C RJA Rating Total Device Dissipation Derate above 25OC Total Device Dissipation Derate above 25OC Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient N M F G P L H C Electrical Characteristics @ 25 C Unless Otherwise Specified O Symbol Parameter Min Max Units 80 --- Vdc OFF CHARACTERISTICS VCEO(sus) ICBO IE BO Collector-Emitter Sustaining Voltage (IC=10mAdc, IE =0) Collector Cutoff Current (VCB=100Vdc, IE =0) (VCB=100Vdc, IE =0, TC=150OC) Emitter Cutoff Current (VEB =7.0Vdc, IC=0) 1 ----- 0.1 0.1 uAdc mAdc --- 0.1 uAdc 50 30 12 250 ----- ------- 0.3 0.9 1.7 ----- 1.5 2.0 --- 1.2 ON CHARACTERISTICS hFE VCE(sat) VBE(sat) VBE(on) DC Current Gain (IC=100mAdc, V CE=1.0Vdc) (IC=500mAdc, V CE=1.0Vdc) (IC=1.5Adc, VCE=1.0Vdc) Collector-Emitter Saturation Voltage (IC=500mAdc, IB =50mAdc) (IC=1.5Adc, IB =150mAdc) (IC=3.0Adc, IB =600mAdc) Base-Emitter Saturation Voltage (IC=1.5Adc, IB =150mAdc) (IC=3.0Adc, IB =600mAdc) Base-Emitter On Voltage (IC=500mAdc, V CE=1.0Vdc) --- Vdc Vdc 2 3 J J PIN 1. PIN 2. PIN 3. EMITTER COLLECTOR BASE Q ! Vdc www.mccsemi.com MCC MJE172 PNP MJE182 NPN Symbol Parameter Min Typ Max Units --- MHz 60 40 pF DYNAMIC CHARACTERISTICS fT 50 TA TC 2.8 14 1K 2.4 12 500 300 200 2.0 10 100 1.6 8.0 --- ----- t, TIME (ns) PD, POWER DISSIPATION (WATTS) Cob Current-Gain--Bandwidth Product (1) (IC=100mAdc, V CE=10Vdc, f test=10MHz) Output Capacitance (V CB=10Vdc, IE =0, f=0.1MHz) MJE172 MJE182 (1) f T = |hfe| x f test TC 1.2 6.0 50 30 20 ----- tr VCE = 30 V IC/IB = 10 VBE(off) = 4.0 V TJ = 25C td 10 0.8 4.0 TA 5 3 2 0.4 2.0 0 0 20 40 60 80 100 120 T, TEMPERATURE (C) Figure 1. Power Derating 140 160 NPN MJE181/182 PNP MJE171/172 1 1 2 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) Figure 3. Turn-On Time www.mccsemi.com 3 5 10 MCC MJE172 PNP MJE182 NPN 10 100 s 5.0 500 s 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 1.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) 10 dc 5.0 ms TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO MJE171 MJE172 2.0 3.0 5.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 5.0 100 s 2.0 500 s 1.0 5.0 ms 0.5 0.2 0.1 0.05 0.02 0.01 1.0 100 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. MJE171, MJE172 Figure 6. MJE181, MJE182 10K 100 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C t, TIME (ns) 1K 500 300 200 PNP MJE171/MJE172 NPN MJE181/MJE182 70 C, CAPACITANCE (pF) 5K 3K 2K ts 100 50 30 20 dc TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW MJE181 RATED VCEO MJE182 tf 50 Cib TJ = 25C 30 20 Cob NPN MJE181/182 PNP MJE171/172 10 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 IC, COLLECTOR CURRENT (AMPS) Figure 7. Turn-Off Time 5 10 10 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Capacitance www.mccsemi.com 30 50