MJE172 PNP
MJE182 NPN
Silicon Power
Transistor
Features
• This device is designed for low power audio amplifier and low current,
high speed switching applications.
Maximum Ratings
Symbol Rating Rating Unit
VCEO
Collector-Emitter Voltage 80 V
VCBO
Collector-Base Voltage 100 V
VEBO
Emitter-Base Voltage 7.0 V
IC Collector Current, Continuous
Peak 3.0
6.0 A
IB Base Current 1.0 A
TJ Operating Junction Temperature -55 to +150 OC
TSTG
Storage Temperature -55 to +150 OC
Thermal Characteristics
Symbol Rating Max Unit
PD Total Device Dissipation
Derate above 25OC 1.5
0.012 W
W/OC
PD Total Device Dissipation
Derate above 25OC 12.5
0.1 W
W/OC
RJC
Thermal Resistance, Junction to Case 10 OC/W
RJA Thermal Resistance, Junction to Ambient 83.4 OC/W
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
VCEO(sus) Collector-Emitter Sustaining Voltage
(IC=10mAdc, IE=0) 80 --- Vdc
ICBO Collector Cutoff Current
(VCB=100Vdc, IE=0)
(VCB=100Vdc, IE=0, TC=150OC) ---
--- 0.1
0.1 uAdc
mAdc
IEBO Emitter Cutoff Current
(VEB=7.0Vdc, IC=0) --- 0.1 uAdc
ON CHARACTERISTICS
hFE DC Current Gain
(IC=100mAdc, VCE=1.0Vdc)
(IC=500mAdc, VCE=1.0Vdc)
(IC=1.5Adc, VCE=1.0Vdc)
50
30
12
250
---
---
---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
(IC=1.5Adc, IB=150mAdc)
(IC=3.0Adc, IB=600mAdc)
---
---
---
0.3
0.9
1.7
Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=1.5Adc, IB=150mAdc)
(IC=3.0Adc, IB=600mAdc) ---
--- 1.5
2.0 Vdc
VBE(on) Base-Emitter On Voltage
(IC=500mAdc, VCE=1.0Vdc) --- 1.2 Vdc
TO-126
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A
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PIN 1. EMITTER
PIN 2. COLLECTOR
1 2 3
PIN 3. BASE
omponents
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www.mccsemi.com
Symbol Parameter Min Typ Max Units
DYNAMIC CHARACTERISTICS
fT Current-Gain—Bandwidth Product (1)
(IC=100mAdc, VCE=10Vdc, ftest=10MHz) 50 --- --- MHz
Cob Output Capacitance
(VCB=10Vdc, IE=0, f=0.1MHz) MJE172
MJE182 ---
--- ---
--- 60
40 pF
(1) fT = |hfe| x ftest
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MJE172 PNP MCC
MJE182 NPN
14
20
Figure 1. Power Derating
T, TEMPERATURE (
°
C)
040 60 100 120 160
10
8.0
TC
6.0
12
PD, POWER DISSIPATION (WATTS)
2.8
0
2.0
1.6
TA
1.2
2.4
4.00.8
2.00.4
80 140
TC
TA
1K
IC, COLLECTOR CURRENT (AMPS)
VCE = 30 V
IC/IB = 10
VBE(off) = 4.0 V
TJ = 25
°
C
t, TIME (ns)
500
300
200
100
50
td
30
20
10
5
10.01 0.03 0.05 0.50.20.1 0.3 10
Figure 3. Turn–On Time
3
2
521 3
tr
NPN MJE181/182
PNP MJE171/172
0.02
10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.01 30
2.0
5.0
0.1
BONDING WIRE LIMITED
THERMALLY LIMITED @
TC = 25
°
C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
Figure 5. MJE171, MJE172
500
µ
s
5.0 ms
dc
1.0
2010 505.03.02.01.0 100
100
µ
s
TJ = 150
°
C
IC, COLLECTOR CURRENT (AMP)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.01
Figure 6. MJE181, MJE182
IC, COLLECTOR CURRENT (AMP)
MJE171
MJE172
0.02
0.05
0.2
0.5
302010 505.03.02.01.0 100
10
2.0
5.0
0.1
1.0
0.02
0.05
0.2
0.5
70
100
µ
s
500
µ
s
5.0 ms dc
MJE181
MJE182
BONDING WIRE LIMITED
THERMALLY LIMITED @
TC = 25
°
C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
TJ = 150
°
C
7.0
10K
IC, COLLECTOR CURRENT (AMPS)
10
5K
3K
2K
1K
500
300
200
100
50
Figure 7. Turn–Off Time
t, TIME (ns)
30
20
0.01 0.03 0.05 0.50.2
0.02 0.1 0.3 10521 3
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25
°
C
ts
tf
VR, REVERSE VOLTAGE (VOLTS)
10 50
70
100
30
Figure 8. Capacitance
50
20105.03.02.01.00.5
C, CAPACITANCE (pF)
0.7
TJ = 25
°
C
Cib
Cob
NPN MJE181/182
PNP MJE171/172
PNP MJE171/MJE172
NPN MJE181/MJE182
20
307.0
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MJE172 PNP MCC
MJE182 NPN
