1
TGV2204-FC
November 2009 © Rev D
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Primary Applications
Product Description
Key Features
Measured Performance
19 GHz VCO with Prescaler
•Automotive Radar
•Frequency Range: 18.5 – 19.5 GHz
•Output Power: 7 dBm @ 19 GHz
•Phase Noise: -105 dBc/Hz at 1 MHz offset,
fc=19 GHz
•Prescaler Output Freq Range : 2.31 – 2.44 GHz
•Prescaler Output Power: -6 dBm
•Bias: Vcc = 5 V, Itotal = 165 mA Typical
•Technology: HBT3
•Chip Dimensions: 1.28 x 1.71 x 0.38 mm
The TriQuint TGV2204-FC is a flip-chip voltage
controlled oscillator (VCO) designed to operate at
frequencies that target the automotive Radar
market. The TGV2204-FC is designed using
TriQuint’s proven HBT3 process and front-side Cu
/ Sn pillar technology for simplified assembly and
low interconnect inductance.
The TGV2204-FC is a VCO that typically provides
7 dBm output power at 19 GHz with < -105 dBc/Hz
phase noise at 1 MHz offset . The integrated
divide-by-8 prescaler eases PLL design. The
TGV2204-FC is an excellent choice for
applications requiring frequency stability in transmit
chain architectures.
The TGV2204-FC has a protective surface
passivation layer providing environmental
robustness.
Lead-free and RoHS compliant.
Bias conditions: Vcc = 5 V, Itotal = 165 mA
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TGV2204-FC
November 2009 © Rev D
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Table II
Recommended Operating Conditions
Table I
Absolute Maximum Ratings 1/
Symbol Parameter Value Notes
Vcc Collector Voltage 11 V 2/
Vtune Tune Voltage 11 V
Itotal Collector Current 276 mA 2/
1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed
under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect
device lifetime. These are stress ratings only, and functional operation of the device at these
conditions is not implied.
2/ Combinations of supply voltage, supply current shall not exceed the maximum power dissipation listed
in Table IV.
Symbol Parameter 1/ Value
Vcc Collector Voltage 5 V ± 5%
Itotal Collector Current 165 mA
Vtune VCO Freq Tune Voltage 0-8 V
1/ See assembly diagram for bias instructions.
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TGV2204-FC
November 2009 © Rev D
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Table III
RF Characterization Table
SYMBOL PARAMETER TEST
CONDITIONS
MINIMUM NOMINAL MAXIMUM UNITS
RF Out Output Power f = 19 – 19.25 GHz 5 7 13 dBm
PN Phase Noise @ 1
MHz Offset
f = 19 – 19.25 GHz -107 dBc/Hz
F/8 Pout
1/
Prescaler Output
Power 1/
f = 19 – 19.25 GHz -11 -6 2 dBm
F/8 Freq Prescaler Output
Frequency
f = 19 – 19.25 GHz 2.31 – 2.44 GHz
Fout 2V Output Frequency,
Vtune = 2 V
18.6 18.95 19.2 GHz
Fout 8V Output Frequency,
Vtune = 8 V
19.4 19.56 20.0 GHz
Bias: Vcc = 5 V, Itotal = 165 mA, typical
1/ Single-ended output power measurement
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TGV2204-FC
November 2009 © Rev D
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Table IV
Power Dissipation and Thermal Properties
1/ For a median life of 1E+6 hours, Power Dissipation is limited to
Pd(max) = (150 ºC – Tbase ºC)/θjc.
2/ Junction operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
Parameter Test Conditions Value Notes
Maximum Power Dissipation Tbaseplate = 70 ºC Pd = TBD W
Tjunction = TBD ºC
Tm = TBD Hrs
1/ 2/
Thermal Resistance, θjc Vcc= 5 V
Id = 165 mA
Pd = 0.825 W
Tbaseplate = 70 ºC
θjc = 80.4 (ºC/W)
Tjunction = 133.5 ºC
Tm = TBD Hrs
Mounting Temperature Refer to Solder Reflow
Profiles (pp 11)
Storage Temperature -65 to 150 ºC
Median Lifetime (Tm) vs Channel Temperature
1.E+04
1.E+05
1.E+06
1.E+07
1.E+08
1.E+09
1.E+10
1.E+11
1.E+12
1.E+13
25 50 75 100 125 150 175 200
Channel Temperature (°C)
Median Lifetime (Hours)
FET11
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TGV2204-FC
November 2009 © Rev D
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Measured Data on Face-down (flipped) Die on Carrier Board
Bias conditions: Vcc = 5 V, Itotal = 165 mA
6
TGV2204-FC
November 2009 © Rev D
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Measured Data on Face-down (flipped) Die on Carrier Board
Bias conditions: Vcc = 5 V, Itotal = 165 mA
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TGV2204-FC
November 2009 © Rev D
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Electrical Schematic
Bias Procedures
Bias-up Procedure Bias-down Procedure
Vtune set to ~ +2 V (for desired Freq)
Vcc set to 5 V ± 5%
For single-ended use of the prescaler (F/8+),
the F/8- output pin may be left open
Reduce Vcc to 0 V.
Turn Vtune to 0 V
Prescaler
VCO
TGV2204-FC
F/8-
Out
RF
Out
VtuneVcc
100
pF
100
pF
÷8 ~
F/8+
Out
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TGV2204-FC
November 2009 © Rev D
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Mechanical Drawing
Drawing is for chip face-up
Units: millimeters
Thickness: 0.38
Die x,y size tolerance: +/- 0.050
Chip edge to pillar dimensions are shown to center of pillar
Pillar #4, 7, 10, 12-15 DC Ground 0.075 ϕPillar #6 Prescaler Out
(F/8+)
0.075 ϕ
Pillar #1, 3 RF CPW
Ground
0.075 ϕPillar #8 Vtune 0.075 ϕ
Pillar #2 RF Out 0.075 ϕPillar #9 Vbb (Not Used) 0.075 ϕ
Pillar #5 Prescaler Out
(F/8-)
0.075 ϕPillar #11 Vcc 0.075 ϕ
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TGV2204-FC
November 2009 © Rev D
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
VccVtune
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Recommended Assembly Diagram
100
pF
100
pF
Die is flip-chip bonded / bumped to carrier
TGV2204-FC Die
(flip-chip bonded)
Prescaler F/8- Output
RFout
TGV2204-FC data
represented in this
datasheet was
taken using co-
planar waveguide
(CPW) transition
on the substrate
and ground-signal-
ground probes
DC
Ground
Prescaler F/8+ Output
RF Gnd
RF Gnd
NOTE: Vcc should be bypassed sufficiently to avoid phase noise
degradation. Bypass capacitors of 1 uF and 470 uF are recommended.
Tuning port should also be free of supply noise.
Alumina substrate board
Thickness: 0.38 mm
εr= 9.9
10
TGV2204-FC
November 2009 © Rev D
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Assembly Notes
Ordering Information
Part Package Style
TGV2204-FC GaAs MMIC Die
Process Sn Reflow
Ramp-up Rate 3 ºC/sec
Flux Activation Time and Temperature 60 – 120 sec @ 140 – 160 ºC
Time above Melting Point (245 C) 60 – 150 sec
Max Peak Temperature 300 ºC
Time within 5 C of Peak Temperature 10 – 20 sec
Ramp-down Rate 4 – 6 ºC/sec
Typical Reflow Profiles for TriQuint Cu / Sn Pillars
Component placement and die attach assembly notes:
•Vacuum pencils and/or vacuum collets are the preferred method of pick up.
•Air bridges must be avoided during placement.
•Cu pillars on die are 65 um tall with a 22 um tall Sn solder cap.
•Recommended board metallization is evaporated TiW followed by nickel/gold at pillar attach interface. Ni is the adhesion layer for
the solder and the gold keeps the Ni from oxidizing. The Au should be kept to a minimum to avoid embrittlement; suggested Au /
Sn mass ratio must not exceed 8%.
•Au metallization is not recommended on traces due to solder wicking and consumption concerns. If Au traces are used, a physical
solder barrier must be applied or designed into the pad area of the board. The barrier must be sufficient to keep the solder from
undercutting the barrier.
Reflow process assembly notes:
•Minimum alloying temperatures 245 C.
•Repeating reflow cycles is not recommended due to Sn consumption on the first reflow cycle.
•An alloy station or conveyor furnace with an inert atmosphere such as N2 should be used.
•Dip copper pillars in “no-clean flip chip” flux prior to solder attach. Suggest using a high temperature flux. Avoid exposing entire
die to flux.
•If screen printing flux, use small apertures and minimize volume of flux applied.
•Coefficient of thermal expansion matching between the MMIC and the substrate/board is critical for long-term reliability.
•Devices must be stored in a dry nitrogen atmosphere.
•Suggested reflow will depend on board material and density.
See Triquint Application Note for flip-chip soldering process: TBD
