+125 OC
TSTG
Symbol Typ
Parameter Conditions Min
Max
Unit
Forward voltage
IF = 500mA
IF = 100mA VFV
0.47
0.36
Reverse current
Capacitance between terminals
VR = 20V
f = 1 MHz, and 0 VDC reverse voltage
IR
CT
uA
pF
100
100
CDBU0530-HF
SMD Schottky Barrier Diode
QW-G1085
O
Maximum Rating (at TA=25 C unless otherwise noted)
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Page 1
Typ
IO
VR
VRM
Average forward rectified current
Reverse voltage
Peak reverse voltage
Forward current,surge peak
Symbol
Parameter Conditions Min
Max
Unit
V
V
A
0.5
20
30
Tj
Storage temperature
Junction temperature OC
+125
-40
IFSM
8.3 ms single half sine-wave superimposed
on rate load (JEDEC method) 2A
REV:A
0.071(1.80)
0.063(1.60)
0.014(0.35) Typ.
0.039(1.00)
0.031(0.80)
0.033(0.85)
0.027(0.70)
Dimensions in inches and (millimeter)
0.012 (0.30) Typ.
0.028(0.70) Typ.
Comchip Technology CO., LTD.
0603/SOD-523F
Features
-Low forward voltage.
-Designed for mounting on small surface.
-Extremely thin / leadless package.
-Majority carrier conduction.
Mechanical data
-Case: 0603/SOD-523F standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking code: cathode band & BR
-Mounting position: Any
-Weight: 0.003 gram(approx.).
Io = 500 mA
VR = 20 Volts
RoHS Device
Halogen Free
Capacitance between terminals (PF)
Reverse voltage (V)
RATING AND CHARACTERISTIC CURVES (CDBU0530-HF)
SMD Schottky Barrier Diode
Page 2
Forward current (mA )
0.2 0.40
10
100
0.5
1
0.7
Forward voltage (V)
Fig. 1 - Forward characteristics
O
-25C
O
25 C
O
75 C
O
125 C
Reverse current ( A )
Reverse voltage (V)
100u
0.1u
1m
100m
10u
1u
0 5 10 15 20
Fig. 2 - Reverse characteristics
O
-25 C
0 5 10 15 20
0
10
20
30
60 f=1MHz
O
Ta=25 C
40
50
0
20
40
60
80
100
0 25 50 75 100 125 150
O
Ambient temperature ( C)
Average forward current(%)
Fig.4 - Current derating curve
120
1000
QW-G1085
Fig. 3 - Capacitance between
terminals characteristics
0.1 0.3 0.6
10m
O
100 C
O
75 C
O
25 C
REV:A
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Page 3
QW-G1085
REV:A
Comchip Technology CO., LTD.
BCdD D2
D1
E F P P0P1T
SYMBOL
A
W W1
(mm)
(inch) 0.039 0.004±0.073 0.004±0.039 0.004±0.061 0.002±7.008 0.04±2.362 MIN. 0.512 0.008±
SYMBOL
(mm)
(inch) 0.069 0.004±0.138 0.002±0.157 0.004±0.157 0.004±0.079 0.004±0.009 0.002±0.315 0.008±0.531 MAX.
1.00 0.10± 1.85 0.10±
4.00 0.10±
1.55 0.05±
3.50 0.05±1.75 0.10±
60.0 MIN. 13.0 0.20±1.00 0.10±
4.00 0.10± 2.00 0.05± 0.23 0.05± 8.00 0.20± 13.5 MAX.
178 1±
Index hole
o
120
Trailer Device Leader
10 pitches (min)10 pitches (min)
.......
.......
....... ..............
....... ..............
End Start
d
E
F
B W
A
P
P0
P1
D1
D2
D
W1
T
C
Direction of Feed
Reel Taping Specification
Polarity
0603
(SOD-523F)
0603
(SOD-523F)
SMD Schottky Barrier Diode
Page 4
QW-G1085
REV:A
Comchip Technology CO., LTD.
Park Number
CDBU0530-HF
Marking Code
BR
Suggested PAD Layout
SIZE
(inch)
0.067
(mm)
1.70
0.60
0.80
0.024
0.031
Marking Code
2.30 0.091
E1.10 0.043
Standard Package
A
B
C
D
A
C
B
E
D
BR
0603/SOD-523F
Case Type
Qty per Reel
(Pcs)
4000
0603/SOD-523F
Reel Size
(inch)
7
