© Semiconductor Components Industries, LLC, 2015
February, 2020 − Rev. 3
1Publication Order Number:
FGH20N60SFDTU−F085/D
IGBT - Field Stop
600 V, 20 A
FGH20N60SFDTU,
FGH20N60SFDTU-F085
Description
Using Novel Field Stop IGBT Technology, ON Semiconductor’s
new series of Field Stop IGBTs offer the optimum performance for
Automotive Chargers, Inverter, and other applications where low
conduction and switching losses are essential.
Features
•High Current Capability
•Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 20 A
•High Input Impedance
•Fast Switching
•Qualified to Automotive Requirements of AEC−Q101
(FGH20N60SFDTU−F085)
•These Devices are Pb−Free and are RoHS Compliant
Applications
•Automotive Chargers, Converters, High Voltage Auxiliaries
•Inverters, PFC, UPS
www.onsemi.com
MARKING DIAGRAM
G
E
C
G
C
E
G
TO−247−3LD
CASE 340CK
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FGH20N60SFD,
FGH20N60SFDTU = Specific Device Code
$Y&Z&3&K
FGH20N60
SFD
$Y&Z&3&K
FGH20N60
SFDTU
Industrial Automotive
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
FGH20N60SFDTU, FGH20N60SFDTU−F085
www.onsemi.com
2
ABSOLUTE MAXIMUM RATINGS
Description Symbol Ratings Unit
Collector to Emitter Voltage VCES 600 V
Gate to Emitter Voltage VGES ±20 V
Transient Gate−to−Emitter Voltage ±30 V
Collector Current TC = 25°CIC40 A
TC = 100°C 20 A
Pulsed Collector Current TC = 25°C ICM (Note 1) 60 A
Maximum Power Dissipation TC = 25°CPD165 W
TC = 100°C 66 W
Operating Junction Temperature TJ−55 to +150 °C
Storage Temperature Range Tstg −55 to +150 °C
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 Seconds TL300 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Parameter Symbol Value Unit
Thermal Resistance Junction−to−Case RJC (IGBT) 0.76 °C/W
Thermal Resistance Junction−to−Case RJC (Diode) 2.51 °C/W
Thermal Resistance Junction−to−Ambient RJA 40 °C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number Top Mark Package Package Method Reel Size Tape Width Quantity
FGH20N60SFDTU FGH20N60SFD TO−247 Tube − − 30
FGH20N60SFDTU−F085* FGH20N60SFDTU TO−247 Tube − − 30
*Qualified to Automotive Requirements of AEC−Q101
ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 250 A600 − − V
Temperature Coefficient of Breakdown
Voltage
BVCES/TJVGE = 0 V, IC = 250 A−0.6 −V/°C
Collector Cut−Off CurrentICES VCE = VCES, VGE = 0 V − − 250 A
G−E Leakage Current IGES VGE = VGES, VCE = 0 V − − ±400 nA
ON CHARACTERISTICs
G−E Threshold Voltage VGE(th) IC = 250 A, VCE = VGE 4.0 4.6 6.5 V
Collector to Emitter Saturation Voltage VCE(sat) IC = 20 A, VGE = 15 V −2.2 2.8 V
IC = 20 A, VGE = 15 V, TC = 125°C−2.4 −V
DYNAMIC CHARACTERISTICS
Input Capacitance Cies VCE = 30 V, VGE = 0 V, f = 1 MHz −985 −pF
Output Capacitance Coes −110 −pF
Reverse Transfer Capacitance Cres −40 −pF
FGH20N60SFDTU, FGH20N60SFDTU−F085
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3
ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued)
Parameter UnitMaxTypMinTest ConditionsSymbol
SWITCHING CHARACTERISTICS
Turn−On Delay Time td(on) VCC = 400 V, IC = 20 A,
RG = 10 VGE = 15 V,
Inductive Load, TC = 25°C
−13 −ns
Rise Time tr−18 −ns
Turn−Off Delay Time td(off) −90 −ns
Fall Time tf−20 48 ns
Turn−On Switching Loss Eon −0.43 −mJ
Turn−Off Switching Loss Eoff −0.13 −mJ
Total Switching Loss Ets −0.56 −mJ
Turn−On Delay Time td(on) VCC = 400 V, IC = 20 A,
RG = 10 VGE = 15 V,
Inductive Load, TC = 125°C
−13 −ns
Rise Time tr−16 −ns
Turn−Off Delay Time td(off) −95 −ns
Fall Time tf−50 −ns
Turn−On Switching Loss Eon −0.53 −mJ
Turn−Off Switching Loss Eoff −0.24 −mJ
Total Switching Loss Ets −0.77 −mJ
Total Gate Charge QgVCE = 400 V, IC = 20 A, VGE = 15 V −66 −nC
Gate to Emitter Charge Qge −7−nC
Gate to Collector Charge Qgc −33 −nC
ELECTRICAL CHARACTERISTICS OF THE DIODE (TJ = 25°C unless otherwise noted)
Parametr Symbol Test Conditions Min Typ Max Unit
Diode Forward Voltage VFM IF = 10 A TC = 25°C−1.9 2.5 V
TC = 125°C−1.7 −
Diode Reverse Recovery Time trr IF = 10 A, diF/dt = 200 A/s TC = 25°C−40 −ns
TC = 125°C−180 −
Diode Reverse Recovery Charge Qrr TC = 25°C−70 −nC
TC = 125°C−495 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
FGH20N60SFDTU, FGH20N60SFDTU−F085
www.onsemi.com
4
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 6. Saturation Voltage vs. VGE
FGH20N60SFDTU, FGH20N60SFDTU−F085
www.onsemi.com
5
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE
Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics
Figure 11. SOA Characteristics Figure 12. Turn−on Characteristics vs. Gate
Resistance
FGH20N60SFDTU, FGH20N60SFDTU−F085
www.onsemi.com
6
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Figure 13. Turn−off Characteristics vs. Gate
Resistance
Figure 14. Turn−on Characteristics vs.
Collector Current
Figure 15. Turn−off Characteristics vs.
Collector Current Figure 16. Switching Loss vs. Gate
Resistance
Figure 17. Switching Loss vs. Collector
Current
Figure 18. Turn−off Switching SOA
Characteristics
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
E
D
L1
E2
(3X) b
(2X) b2
b4
(2X) e
Q
L
0.25 MBAM
A
A1
A2
A
c
B
D1
P1
S
P
E1
D2
2
13
2
DIM MILLIMETERS
MIN NOM MAX
A 4.58 4.70 4.82
A1 2.20 2.40 2.60
A2 1.40 1.50 1.60
b 1.17 1.26 1.35
b2 1.53 1.65 1.77
b4 2.42 2.54 2.66
c 0.51 0.61 0.71
D 20.32 20.57 20.82
D1 13.08 ~ ~
D2 0.51 0.93 1.35
E 15.37 15.62 15.87
E1 12.81 ~ ~
E2 4.96 5.08 5.20
e ~ 5.56 ~
L 15.75 16.00 16.25
L1 3.69 3.81 3.93
P 3.51 3.58 3.65
P1 6.60 6.80 7.00
Q 5.34 5.46 5.58
S 5.34 5.46 5.58
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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DOCUMENT NUMBER:
DESCRIPTION:
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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TO−247−3LD SHORT LEAD
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1
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