A Product Line of Diodes Incorporated ZXMP3A16G ADVANCE INFORMATION 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits * ID max V(BR)DSS RDS(on) max TA = 25C (Notes 3) 45m @ VGS = -10V -7.5A 70m @ VGS = -4.5V -5.9A -30V This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Motor control * DC-DC Converters * Power management functions * Relay and solenoid driving Fast switching speed * Low threshold * Low gate drive * "Green" component. Lead Free Finish / RoHS compliant (Note 1) * Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications * Low on-resistance * * Case: SOT223 * Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 * Moisture Sensitivity: Level 1 per J-STD-020 * Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 * Weight: 0.112 grams (approximate) SOT223 D G S Pin Out - Top View Top View Equivalent Circuit Ordering Information (Note 1) Product ZXMP3A16GTA ZXMP3A16GTC Note: Marking ZXMP3A16 ZXMP3A16 Reel size (inches) 7 13 Tape width (mm) 12 12 Quantity per reel 1,000 4,000 1. Diodes, Inc. defines "Green" products as those which are RoHS compliant and contain no halogens or antimony compounds. All applicable RoHS exemptions applied. Further information about Diodes Inc.'s "Green" Policy can be found on our website. Marking Information ZXMP 3A16 ZXMP3A16G Document Number DS33575 Rev. 5 - 2 ZXMP = Product Type Marking Code, Line 1 3A16 = Product Type Marking Code, Line 2 1 of 8 www.diodes.com November 2011 (c) Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMP3A16G Maximum Ratings @TA = 25C unless otherwise specified Characteristic Drain-Source voltage Symbol VDSS Value -30 Unit V VGS V A VGS = 10V Continuous Source current (Body diode) IDM 20 -7.5 -6.0 -5.4 -24.9 (Note 3) IS -3.2 A Pulsed Source current (Body diode) (Note 4) ISM -24.9 A Symbol Unit RJL Value 2.0 16 3.9 31 62.5 32.2 8.51 TJ, TSTG -55 to 150 Gate-Source voltage Continuous Drain current VGS = 10V Pulsed Drain current (Note 3) TA = 70C (Note 3) (Note 2) (Note 4) ID A Thermal Characteristics @TA = 25C unless otherwise specified Characteristic Power dissipation Linear derating factor Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and storage temperature range Notes: (Note 2) PD (Note 3) (Note 2) (Note 3) (Note 5) RJA W mW/C C/W C 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 3. Same as note (2), except the device is measured at t 10 sec. 4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 s. The pulse current is limited by the maximum junction temperature. 5. Thermal resistance from junction to solder-point (at the end of the drain lead). ZXMP3A16G Document Number DS33575 Rev. 5 - 2 2 of 8 www.diodes.com November 2011 (c) Diodes Incorporated A Product Line of Diodes Incorporated Thermal Characteristics Max Power Dissipation (W) -ID Drain Current (A) RDS(on) 10 Limited 1 DC 1s 100m 100ms 10ms Single Pulse 10m T amb=25C 1ms 100s 1 10 -VDS Drain-Source Voltage (V) 2.0 1.6 1.2 0.8 0.4 0.0 0 20 Safe Operating Area 40 60 80 100 120 140 160 Temperature (C) Derating Curve 70 T amb=25C 60 Maximum Power (W) Thermal Resistance (C/W) ADVANCE INFORMATION ZXMP3A16G 50 40 D=0.5 30 20 Single Pulse D=0.2 D=0.05 10 Single Pulse T amb=25C 100 10 D=0.1 0 100 1m 10m 100m 1 Pulse Width (s) 10 100 1k 1 100 Document Number DS33575 Rev. 5 - 2 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance ZXMP3A16G 1m Pulse Power Dissipation 3 of 8 www.diodes.com November 2011 (c) Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMP3A16G Electrical Characteristics @TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 -1 100 V A nA ID = -250A, VGS = 0V VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VGS(th) -1.0 V Static Drain-Source On-Resistance (Note 6) RDS (ON) gfs VSD trr Qrr ID = -250A, VDS = VGS VGS = -10V, ID = -4.2A VGS = -4.5V, ID = -3.4A VDS = -15V, ID = -4.2A IS = -3.6A, VGS = 0V, TJ = 25C 9.2 -0.85 21.7 16.1 45 70 -0.95 Ciss Coss Crss Qg Qg Qgs Qgd tD(on) tr tD(off) tf 1022 267 229 17.2 29.6 2.8 8.6 3.8 6.5 37.1 21.4 Forward Transconductance (Notes 6 & 7) Diode Forward Voltage (Note 6) Reverse recovery time (Note 7) Reverse recovery charge (Note 7) DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (Note 8) Total Gate Charge (Note 8) Gate-Source Charge (Note 8) Gate-Drain Charge (Note 8) Turn-On Delay Time (Note 8) Turn-On Rise Time (Note 8) Turn-Off Delay Time (Note 8) Turn-Off Fall Time (Note 8) Notes: m S V ns nC pF pF pF nC nC nC nC ns ns ns ns Test Condition IF = -2A, di/dt = 100A/s, TJ = 25C VDS = -15V, VGS = 0V f = 1MHz VGS = -5V VGS = -10V VDS = -15V ID = -4.2A VDD = -15V, VGS = -10V ID = -1A, RG 6.0 6. Measured under pulsed conditions. Pulse width 300s; duty cycle 2% 7. For design aid only, not subject to production testing. 8. Switching characteristics are independent of operating junction temperatures. ZXMP3A16G Document Number DS33575 Rev. 5 - 2 4 of 8 www.diodes.com November 2011 (c) Diodes Incorporated A Product Line of Diodes Incorporated Typical Characteristics -ID Drain Current (A) 5V 4V 3.5V 10 -ID Drain Current (A) 10V T = 25C 3V 2.5V 1 -VGS 2V 0.1 0.1 1 10 2V -VGS 0.1 1.5V 0.1 1 10 -VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics 1.6 Normalised RDS(on) and VGS(th) 10 T = 150C 1 T = 25C -VDS = 10V 0.1 1.5 2.0 2.5 3.0 3.5 -VGS Gate-Source Voltage (V) 3V 3.5V 1 4V 0.1 5V 10V 0.1 1 10 RDS(on) 1.2 1.0 VGS(th) 0.8 ID = -250uA 0.6 -50 ZXMP3A16G Document Number DS33575 Rev. 5 - 2 0 50 100 150 10 T = 150C T = 25C 1 0.1 0.01 0.4 0.6 0.8 1.0 -VSD Source-Drain Voltage (V) -ID Drain Current (A) On-Resistance v Drain Current VGS = VDS Normalised Curves v Temperature T = 25C 2.5V -VGS ID = -5.4A Tj Junction Temperature (C) Typical Transfer Characteristics 2V VGS = -10V 1.4 -ISD Reverse Drain Current (A) -ID Drain Current (A) 3.5V 3V 10V 1 0.01 10 T = 150C 2.5V -VDS Drain-Source Voltage (V) RDS(on) Drain-Source On-Resistance () ADVANCE INFORMATION ZXMP3A16G 1.2 Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com November 2011 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXMP3A16G VGS = 0V 1600 CISS 1400 f = 1MHz 1200 1000 COSS 800 600 400 CRSS 200 0 0.1 1 10 -VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage -VGS Gate-Source Voltage (V) 10 1800 C Capacitance (pF) ADVANCE INFORMATION Typical Characteristics - continued ID = -4.2A 8 6 4 2 VDS = -15V 0 0 5 10 15 20 25 30 Q - Charge (nC) Gate-Source Voltage v Gate Charge Test Circuits ZXMP3A16G Document Number DS33575 Rev. 5 - 2 6 of 8 www.diodes.com November 2011 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXMP3A16G ADVANCE INFORMATION Package Outline Dimensions DIM A A1 A2 b b2 C Millimeters Min Max 1.80 0.02 0.10 1.55 1.65 0.66 0.84 2.90 3.10 0.23 0.33 Inches Min Max 0.071 0.0008 0.004 0.0610 0.0649 0.026 0.033 0.114 0.122 0.009 0.013 DIM D e e1 E E1 L Millimeters Min Max 6.30 6.70 2.30 BSC 4.60 BSC 6.70 7.30 3.30 3.70 0.90 - Inches Min Max 0.248 0.264 0.0905 BSC 0.181 BSC 0.264 0.287 0.130 0.146 0.355 - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches. Suggested Pad Layout 3.8 0.15 2.0 0.079 6.3 0.248 2.0 0.079 1.5 0.059 ZXMP3A16G Document Number DS33575 Rev. 5 - 2 2.3 0.091 7 of 8 www.diodes.com mm inches November 2011 (c) Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMP3A16G IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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