
Features
n Single device for two I/O lines
n Low capacitance for high-speed CANbus
n IEC 61000-4-2 30 kV ESD
n IEC 61000-4-5 (Level 1, CWG 1.2/50)
500 V Surge
n RoHS compliant*
Applications
n High-speed CANbus
n Industrial control networks
n Smart Distribution Systems (SDS)
n DeviceNet™
n Factory and process automation systems
n Lift control systems
Absolute Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted)
CDSOT23-T24CAN CANbus Protector
*RoHS COMPLIANT
LEAD FREE
*RoHS COMPLIANT
VERSIONS
AVAILABLE
LEAD FREE
VERSIONS ARE
RoHS COMPLIANT*
DeviceNet™ is a trademark of ODVA.
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
General Information
The Model CDSOT23-T24CAN device is designed to provide ESD and surge protection
for CAN transceivers, meeting IEC 61000-4-2 (ESD) and IEC 61000-4-5 (Surge) require-
ments. The dual TVS array protects both data lines, oers a Working Reverse Voltage
of 24 V and a Minimum Breakdown Voltage of 26.2 V and can be used with transceivers
with internal circuitry for 24 V power supply miswiring. The low capacitance and low
leakage current of the Model CDSOT23-T24CAN minimizes impact on signal integrity
and is compatible with high-speed CAN.
The SOT-23 packaged device conforms to JEDEC standards and will mount directly
onto the industry standard SOT-23 footprint. Its compact size eases layout on compact
PCB designs while ensuring compliance with stringent EMI requirements.
Rating Symbol Value Unit
Repetitive Peak O-state Voltage VDRM 24 V
Non-Repetitive Peak Impulse Current, 8/20 µs Waveform IPPSM 8A
Non-Repetitive Peak Impulse Current, 1.2/50 µs Waveform IPPSM 6 A
ESD (IEC 61000-4-2 Contact) 30 kV
Junction Temperature TJ-40 to +150 ˚C
Storage Temperature Tstg -55 to +150 ˚C
3
1
2
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter Test Condition Min. Typ. Max. Unit
IDLeakage Current VD = VDRM 100 nA
VBR Breakdown Voltage IBR = 1 mA 26.2 32 V
VCClamping Voltage I = 5 A 8/20 µs waveform 36 V
VCClamping voltage I = 8 A 8/20 µs waveform 40 V
C Capacitance VD = 0 V, f = 1 MHz
Vosc = 1 Vrms
Line to GND (Pin 1-3 or Pin 2-3) 22 30
pF
Line to Line (Pin 1-2) 11
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