MJE13003D
DISCRETE SEMICONDUCTORS
R
DC COMPONENTS CO., LTD.
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Pinning
1 = Base
2 = Collector
3 = Emitter
Description
Designed for high-voltage, high-speed power switching
inductive circuits where fall time is critical.
Characteristic Symbol Rating Unit
Collector-Emitter Voltage VCEV 700 V
VCEO 400 V
Emitter-Base Voltage VEBO 9 V
Collector Current IC 1.5 A
Base Current IB 0.75 A
Total Power Dissipation(TC=25oC) PD 40 W
Junction Temperature TJ +150 oC
Storage Temperature TSTG -55 to +150 oC
Absolute Maximum Ratings(TA=25oC)
Characteristic Symbol Min Typ Max Unit Test Conditions
Collector-Emitter Breakdown Voltage BVCEV 700 - - V IC=1mA, VBE(off)=1.5V
BVCEO 400 - - V IC=10mA
Collector Cutoff Current ICEV - - 1 mA VCE=700V, VBE(off)=1.5V
Emitter Cutoff Current IEBO - - 1 mA VEB=9V
VCE(sat)1 - - 0.5 V IC=0.5A, IB=0.1A
Collector-Emitter Saturation Voltage(1) VCE(sat)2 - - 1 V IC=1A, IB=0.25A
VCE(sat)3 - - 3 V IC=1.5A, IB=0.5A
Base-Emitter Saturation Voltage(1) VBE(sat)1 - - 1 V IC=0.5A, IB=0.1A
VBE(sat)2 - - 1.2 V IC=1A, IB=0.25A
DC Current Gain(1) hFE1 8 - 40 - IC=0.5A, VCE=2V
hFE2 5 - 25 - IC=1A, VCE=2V
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
TO-126ML
Dimensions in inches and (millimeters)
.090
(2.28)
.123(3.12)
.113(2.87)
.084(2.14)
.074(1.88)
.033(0.84)
.027(0.68)
.163(4.12)
.153(3.87) .044(1.12)
.034(0.87)
.060(1.52)
.050(1.27)
.084(2.12)
.074(1.87)
.591(15.0)
.551(14.0)
.300(7.62)
.290(7.37)
.148(3.75)
.138(3.50)
.056(1.42)
.046(1.17)
.180
(4.56)Typ
.146(3.70)
.136(3.44)
.027(0.69)
.017(0.43)
Typ
123