KST-9021-000 1
SBC328
PNP Silicon Transistor
Descriptions
• High current appl ication
• Switching application
Features
• Suitable for AF-Driver stage and l ow power output stages
• Complementary pair with SBC338
Ordering Information
Type NO. Marking Package Code
SBC328 SBC328 TO-92
Outline Dimensions unit :
mm
S
Se
em
mi
ic
co
on
nd
du
uc
ct
to
or
r
4.5±0.1
4.5±0.1
0.4±0.02
1.27 Typ.
2.54 Typ.
1 2 3
3.45±0.1
2.25±0.1
2.06±0.1
1.20±0.1
0.38
PIN Conne ctions
1. Collector
2. Bas e
3. Emitter
14.0±0.40
KST-9021-000 2
SBC328
Absolute maximum ratings (Ta=25°
°°
°C)
Characteristic Symbol Ratings Unit
Collector-Base vo ltage VCBO -30 V
Collector-Emitter vo ltage VCEO -25 V
Emitter-base voltage VEBO -5 V
Collector current IC -800 mA
Collector dissipation PC 625 mW
Junction temperature Tj 150
°C
Storage temperature Tstg -55~150
°C
Electrical Characteristics (Ta=25°
°°
°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector-Emitter breakd own voltage BVCEO I
C=-1mA, IB=0 -25 - - V
Base-Emitter Turn On voltage VBE(ON) V
CE=-1V, IC=-300mA - - -1.2 V
Collector- Emitter saturation v olta ge VCE(sat) I
C=-500mA, IB=-50mA - - -700 mV
Collector cut-off current ICBO V
CB=-25V, IE=0 - - -100 nA
DC current gain hFE* VCE=-1V, IC=-100mA 100 - 630 -
Transition frequency fT VCB=-5V, IE=10mA,
f=100MHz - 100 - MHz
Collector output capacitance Cob VCB=-10V, IE= 0, f=1MHz - 16 - pF
* : hFE rank / 16(A) : 100 ~ 250, 25(B) : 160 ~ 400, 40(C) : 250 ~ 630
KST-9021-000 3
SBC328
Electrical Characteristic Curves
Fig. 5 VCE(sat) - IC
Fig. 3 IC - VCE
Fig. 2 IC -VBE
Fig. 4 hFE - IC
Fig. 1 PC-Ta
