SIEMENS SIPMOS Power Transistors @ Nchannel @ Enhancement mode @ Avalanche-rated BUZ 73 BUZ73A WPTOS381 $ Type Vos Ip To Ros (on) Package " Ordering Code BUZ 73 200V '7.0A |28C |049 TO-220 AB C67078-S1317-A2 BUZ73A |200V 155A [37C [062 |TO-220AB C67078-S1317-A3 Maximum Ratings Parameter a a Symbol y BUZ Unit 73 73 A Continuous drain current Ip 7.0 5.5 A Pulsed drain current, Tz = 25 C Io pus 28 22 Avalanche current, limited by T, max Ia 7.0 Avalanche energy, periodic limited by 7; imax Ean 6.5 mJ Avalanche energy, single pulse Exs | 120 In =7 A, Von = 50 V, Rag = 25.2 L = 3.67 mH, 7, = 25C Gate-source voltage Vos +20 Vv Power dissipation, 7, = 25 C Pro 40 Ww Operating and storage temperature range T,. Tig - 55 ...+ 150 C Thermal resistance, chip-case Rin sc 7 <3.1 KAW DIN humidity category, DIN 40 040 fe i E - IEC climatic category, DIN IEC 68-1 - 55/150/56 1) See chapter Package Outlines. 386SIEMENS BUZ 73 BUZ73 A Electrical Characteristics at 7, = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. | typ. | max. Static characteristics Drain-source breakdown voltage Ver) oss | 200 - - Vv Veg = OV, Ip = 0.25 mA Gate threshold voltage Vestn | 2.1 3.0 4.0 Ves = Vos, fp = 1 mA Zero gate voltage drain current loss pA Vos = 200 V, Ves = OV T= 25C - 0.1 1.0 T,= 125C - 10 100 Gate-source leakage current Tess - 10 100 nA Veg = 20 V, Vos = OV Drain-source on-resistance Robs (on) Q Veg =10V, 1 =4.5A BUZ 73 - 0.3 0.4 BUZ73A - 0.5 0.6 Dynamic characteristics Forward transconductance Bis 3.0 4.2 - Ss Vps 2 2 X Ip X R pstenymaxs 1p = 4.5 A Input capacitance Cos - 400 530 pF Veg = 0 V, Vos = 25 V, f= 1 MHz Output capacitance Coss ~ 85 130 Veg = 0 V, Vog = 25 V, f= 1 MHz Reverse transfer capacitance Css - 45 70 Veg = 0 V, Vog = 25 V, f= 1 MHz Turn-on time fon s (fon = ba tony + fr) La (on) - 10 15 ns Vop = 30 V, Ves = 10 V, Ip = 3.0 A, Reg =50Q |, _ 40 60 Turn-off time ton. (lot = ta ot) + 4) La (ott - 55 75 Vop = 30 V, Veg = 10 V, Ip = 3.0 A, Reg = 502 A _ 30 40 Semiconductor Group 387SIEMENS BUZ 73 BUZ73 A Electrical Characteristics (cont'd) at 7; = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. | max. Reverse diode Continuous reverse drain current Is A Tc = 25C BUZ 73 - - 7.0 BUZ 73 A - - 5.5 Pulsed reverse drain current Ts To = 25C BUZ 73 - - 28 BUZ73A _ - 22 Diode forward on-voltage Vsp - 1.3 1.7 Vv 15=14A, Veg = OV Reverse recovery time tir - 200 - ns Va = 100 V, fp =ls,dip/ dt = 100 A/us Reverse recovery charge 0, (7 0.60 - uc Ve=100V,i-=/s,di-/dt = 100 A/us | Semiconductor Group 388SIEMENS BUZ 73 BUZ73 A Characteristics at 7,= 25 C, unless otherwise specified. Total power dissipation Typ. output characteristics Pro =f (To) Ip =f (Vos) BUZ 73 parameter: f, = 80 us 45 Bu TA SILO3256 16 Be? S1L03257 By =40W = Pot w fy A 10V9V 8V 7.5 WV 38 12 30 10 25 8 20 6 15 4 10 4.5V 5 2 : 4V 0 0 20 40 60 80 100 120 c 160 O12 5 45 6 7 8 9 10 V 12 s * bs Typ. output characteristics Safe operating area 1b =f (Vs) BUZ73A Ip =f (Vps) BUZ 73 parameter: t, = 80 ys parameter: D = 0.01, 7, = 25C 13 BUZ 73A SILO3271 102 BUZ 73 S1LO3258 ly loon 6.5V Vyg=20V NO WN Fk HT mM SN wo oO OG 0 0 1 2345 6 7 8 9 10 11 V 13 Ky S Semiconductor Group 389 10! 10 107! 10 103 - bosSIEMENS BUZ 73 BUZ 73 A Safe operating area fo =f (Vos) parameter: D = 0.01, 7, = 25C BUZ73A SILO3273 102 BUz 234 ty op | 19! 10 yv 103 Nps Typ.forward transconductance 8s =f (Ip) parameter: 7, = 80 ps 73A SILO3260 6.0 BUZ Hs 8 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 10 A 12 Semiconductor Group Typ. transfer characteristics fh =f (Ves) parameter: 1, = 80 us, Vos = 25 V Buz 73A SILO3259 13 Ip A nN WwW FF AAs wO OO OD oO 0 1 2 3 4 5 6 7 8 V 10 . Yes Typ. drain-source on-resistance Ros (on) =f (lo) parameter: Ves BUZ 73 13 BUZ 73 SIL03261 Rogion) Q 11 it 0.9 0.8 0.7 0.6 05 0.4 0.3 0.2 0.1 0.0 2 4 6 8 10 12 A 16 +. I, 390SIEMENS BUZ 73 BUZ73 A Typ. drain-source on-resistance Drain-source on-resistance Ros (on) =F Up) BUZ73 A Ros tom =f (7) BUZ 73 parameter: Ves parameter: /p = 4.5 A, Vag = 10 V, (spread) 4,9 BU 73a SIL03272 0.9 SILO3262 R DS(on) 9 Roston) Qa i ; ce L 4 / 1.4 0.7 ape fot 1.2 0.6 Va 1.0 a5}-4-+.1 P A 98% A A 0.8 0.4 + A i" 0.6 0.3 EE 4 La 7 Le] typ 0.4 O.2p bef pt 4 0.2 0.1}-+ L 0.0 0.0 cone LL 0123 45 67 8 91011 A 13 -80 -40 0 40 80 120 C160 oe ly Tj Drain-source on-resistance Gate threshold voltage Ros (on) = f(T) BUZ 73 A Vos (th) =f(T) parameter: /p = 4.5 A, Ves = 10 V, (spread) BUZ 73A StLO3277 1.4 Poston) 1.2 | 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -80 ied 120 160 . fj -40 0 40 80 Semiconductor Group 391 parameter: Ves = Vos, /p = 1 MA, (Spread) 73A BUZ S1L03263 5.0 V 44 4.0 3.6 3.2 2.8 2.4 2.0 1.6 1.2 Vestih) 0.8 0.4 0.0 ~60-40-20 OG 20 40 60 80 100120 C 160 7SIEMENS BUZ 73 BUZ73A Typ. capacitances C = f (Vos) parameter: Veg = 0 V, f= 1 MHz 1 Qo! BUZ T3A SILO3264 nF 0 5S 19 15 20 25 30 V_ 40 . Ys Forward characteristics of reverse diode Tp =f (Vsp) parameter: 7; , fp = 80 us 102 BUZ 73h SILO3267 Irn 10! 5 7,=150 C 0 10 T= 25 C 5 7,=150 -C (98%) T= 25 (98%) 1071: 0.0 1.0 2.0 v3.0 > Kp Semiconductor Group Drain current Ip =f (Tc) parameter: Vgsg = 10 V BUZ TBA SILO3265 75 032 Ip A 6.5 6.0 5.5 5.0 45 4.0 3.5 3.0 2.5 2.0 15 1.0 0.5 0.0 0 BUZ 73A 20 40 60 80 100 120 Cc 160 + |, Avalanche energy Es = f (7) parameter: [p = 7 A, Vpp = 50 V Res = 25 Q, L = 3.67 mH A SILO3268 130 BUZ Exs_ md { 110 | 100) 90 80 70 60 50 40 30 20 10 0 20 40 60 80 100 120 140 C160 392SIEMENS BUZ 73 BUZ 73 A Transient thermal impedance Zinsc =F (tp) parameter: D =1,/-T 10! BUZ 73/BUZ 734 SILO3266 2inuc K/W 10 Meat a A Wi to"! re rT 19-214 Ll fov 1075 10-* to-3 107-2 107! 10% s 10! + |, Semiconductor Group Typ. gate charge 393 Ves = f (Qeate) parameter: [p puis = 13.5 A BUZ 73/BUZ 73A SILO3269 f- / LL. 4 Nome LA J 160 Mose : L/ 6 LL AT 4 0 5 10 16 20 25 30 nc 40 Cote