PD - 97034 IRF4905SPbF IRF4905LPbF HEXFET(R) Power MOSFET Features O O O O O O O Advanced Process Technology Ultra Low On-Resistance 150C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free D VDSS = -55V RDS(on) = 20m G ID = -42A S Description D Features of this design are a 150C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. D G D S G D2Pak IRF4905SPbF Absolute Maximum Ratings G D S Gate Drain Source Parameter Max. -70 ID @ TC = 100C Continuous Drain Current, VGS @ 10V (Silicon Limited) -44 ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Package Limited) -42 Pulsed Drain Current c Linear Derating Factor Gate-to-Source Voltage EAS (Thermally limited) Single Pulse Avalanche Energy d EAS (Tested ) Single Pulse Avalanche Energy Tested Value IAR Avalanche Current EAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range c h g Mounting Torque, 6-32 or M3 screw Thermal Resistance 170 W 1.3 W/C 20 V 140 mJ 790 See Fig.12a, 12b, 15, 16 A -55 to + 150 C 300 (1.6mm from case ) y i Junction-to-Case RJA Junction-to-Ambient (PCB Mount, steady state) y 10 lbf in (1.1N m) Parameter RJC www.irf.com A mJ Soldering Temperature, for 10 seconds j Units -280 PD @TC = 25C Power Dissipation VGS S TO-262 IRF4905LPbF ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) IDM D ij Typ. Max. --- 0.75 --- 40 Units 1 8/5/05 IRF4905S/L Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions VGS = 0V, ID = -250A V(BR)DSS Drain-to-Source Breakdown Voltage -55 --- --- V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient --- -0.054 --- V/C Reference to 25C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance --- --- 20 m VGS = -10V, ID = -42A VGS(th) Gate Threshold Voltage -2.0 --- -4.0 V VDS = VGS, ID = -250A gfs Forward Transconductance 19 --- --- S VDS = -25V, ID = -42A IDSS Drain-to-Source Leakage Current --- --- -25 A VDS = -55V, VGS = 0V --- --- -200 --- --- 100 IGSS Gate-to-Source Forward Leakage V e VDS = -44V, VGS = 0V, TJ = 125C nA VGS = -20V Gate-to-Source Reverse Leakage --- --- -100 VGS = 20V Qg Total Gate Charge --- 120 180 ID = -42A Qgs Gate-to-Source Charge --- 32 --- Qgd Gate-to-Drain ("Miller") Charge --- 53 --- td(on) Turn-On Delay Time --- 20 --- VDD = -28V tr Rise Time --- 99 --- ID = -42A td(off) Turn-Off Delay Time --- 51 --- tf Fall Time --- 64 --- LS Internal Source Inductance --- 7.5 --- Ciss Input Capacitance --- 3500 --- Coss Output Capacitance --- 1250 --- Crss Reverse Transfer Capacitance --- 450 --- Coss Output Capacitance --- 4620 --- Coss Output Capacitance --- 940 --- VGS = 0V, VDS = -44V, = 1.0MHz --- VGS = 0V, VDS = 0V to -44V nC VDS = -44V e VGS = -10V ns RG = 2.6 e VGS = -10V nH Between lead, and center of die contact Coss eff. Effective Output Capacitance --- 1530 VGS = 0V VDS = -25V pF = 1.0MHz VGS = 0V, VDS = -1.0V, = 1.0MHz f Source-Drain Ratings and Characteristics Parameter IS Continuous Source Current Min. Typ. Max. Units --- --- -42 --- --- -280 --- -1.3 (Body Diode) ISM Pulsed Source Current c A showing the integral reverse p-n junction diode. (Body Diode) VSD Diode Forward Voltage --- trr Reverse Recovery Time --- 61 Qrr Reverse Recovery Charge --- 150 ton Forward Turn-On Time 2 Conditions MOSFET symbol e V TJ = 25C, IS = -42A, VGS = 0V 92 ns TJ = 25C, IF = -42A, VDD = -28V 220 nC di/dt = -100A/s e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRF4905S/L 1000 1000 100 BOTTOM TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) TOP VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V 10 -4.5V 60s PULSE WIDTH Tj = 25C 100 BOTTOM 10 -4.5V 60s PULSE WIDTH Tj = 150C 1 1 0.1 1 10 100 1000 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.0 1000 40 Gfs, Forward Transconductance (S) TJ = 25C -ID, Drain-to-Source Current() VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V TJ = 150C 100.0 10.0 1.0 VDS = -25V 60s PULSE WIDTH TJ = 25C 30 TJ = 150C 20 10 VDS = -10V 380s PULSE WIDTH 0.1 3 4 5 6 7 8 9 10 11 12 13 -VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 14 0 0 20 40 60 80 -ID, Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance Vs. Drain Current 3 IRF4905S/L 7000 -VGS, Gate-to-Source Voltage (V) 6000 C, Capacitance (pF) 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 5000 Ciss 4000 3000 Coss 2000 1000 Crss ID= -42A 12 8 4 0 0 1 10 0 100 1000.0 1000 -ID, Drain-to-Source Current (A) -ISD , Reverse Drain Current (A) 80 120 160 200 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100.0 TJ = 150C 10.0 TJ = 25C 1.0 40 QG Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) OPERATION IN THIS AREA LIMITED BY R DS (on) 100 1msec 100sec 10msec LIMITED BY PACKAGE 10 DC Tc = 25C Tj = 150C Single Pulse VGS = 0V 1 0.1 0.0 0.4 0.8 1.2 1.6 -VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS = -44V VDS= -28V VDS= -11V 16 2.0 0 1 10 100 -VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF4905S/L 80 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 -ID , Drain Current (A) LIMITED BY PACKAGE 60 40 20 0 25 50 75 100 125 ID = -42A VGS = -10V 1.5 1.0 0.5 150 -60 -40 -20 TC , Case Temperature (C) 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (C) Fig 10. Normalized On-Resistance Vs. Temperature Fig 9. Maximum Drain Current Vs. Case Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 J 0.02 0.01 0.01 R1 R1 J 1 R2 R2 2 1 2 Ci= i/Ri Ci i/Ri R3 R3 3 C 3 Ri (C/W) i (sec) 0.1165 0.000068 0.3734 0.002347 0.2608 0.014811 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF4905S/L L VDS RG -20V IAS VDD A DRIVER 0.01 tp 15V Fig 12a. Unclamped Inductive Test Circuit I AS EAS, Single Pulse Avalanche Energy (mJ) 600 D.U.T ID -17A -30A BOTTOM -42A TOP 500 400 300 200 100 0 25 50 75 100 125 150 Starting TJ, Junction Temperature (C) tp V(BR)DSS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10V 3.6 QGD VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V .2F .3F D.U.T. +VDS -VGS(th) Gate threshold Voltage (V) QGS 3.2 ID = -250A 2.8 2.4 2.0 -75 VGS -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( C ) -3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 Fig 14. Threshold Voltage Vs. Temperature www.irf.com IRF4905S/L 1000 Avalanche Current (A) Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 0.01 0.05 10 0.10 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth EAR , Avalanche Energy (mJ) 160 TOP Single Pulse BOTTOM 1% Duty Cycle ID = -42A 120 80 40 0 25 50 75 100 125 Starting TJ , Junction Temperature (C) Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 150 D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav 7 IRF4905S/L D.U.T** Driver Gate Drive + * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple 5% ** P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - - D= Period P.W. + Reverse Polarity of D.U.T for P-Channel ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for P-Channel HEXFET(R) Power MOSFETs RD VDS VGS D.U.T. RG - + VDD VGS Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit td(on) tr t d(off) tf VGS 10% 90% VDS Fig 18b. Switching Time Waveforms 8 www.irf.com IRF4905S/L D2Pak Package Outline (Dimensions are shown in millimeters (inches)) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L" Note: "P" in assembly line position indicates "Lead-Free" OR INT ERNAT IONAL RECT IFIER LOGO DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L AS S EMBLY LOT CODE INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE www.irf.com PART NUMBER F530S PART NUMBER F530S DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 0 = 2000 WEEK 02 A = AS S EMBLY S IT E CODE 9 IRF4905S/L TO-262 Package Outline (Dimensions are shown in millimeters (inches)) IGBT 1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 IN T HE AS SEMBLY LINE "C" Note: "P" in ass embly line pos ition indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C OR INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE 10 PART NUMBER DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 7 = 1997 WEEK 19 A = AS SEMBLY SIT E CODE www.irf.com IRF4905S/L D2Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) 3 4 Notes: Repetitive rating; pulse width limited by Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive max. junction temperature. (See fig. 11). avalanche performance. Limited by TJmax, starting TJ = 25C, L = 0.16mH This value determined from sample failure population. 100% RG = 25, IAS = -42A, VGS =-10V. Part not tested to this value in production. recommended for use above this value. This is applied to D2Pak, when mounted on 1" square PCB (FR Pulse width 1.0ms; duty cycle 2%. 4 or G-10 Material). For recommended footprint and soldering Coss eff. is a fixed capacitance that gives the techniques refer to application note #AN-994. same charging time as Coss while VDS is rising R is measured at TJ approximately 90C from 0 to 80% VDSS . Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 08/05 www.irf.com 11 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/