MPSH10 / MMBTH10
N
Discrete POWER & Signal
Technologies
NPN RF Transistor
This device is designed for use in low noise UHF/VHF amplifiers,
with collector currents in the 100 µA to 20 mA range in common
emitter or common base mode of operations, and in low frequency
drift, high output UHF oscillators. Sourced from Process 42.
MPSH10 MMBTH10
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Vo ltage 25 V
VCBO Collector-Base Voltage 30 V
VEBO E m i tter - Base Voltage 3 . 0 V
ICC ollector Current - Continuous 50 mA
TJ, T stg Operating and Storage Junction Temperature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
CEBTO-92
C
B
E
SOT-23
Mark: 3E
Symbol Characteristic Max Units
MPSH10 *MMBTH10
PDTo ta l De vice Dissip at i on
Derate above 25°C350
2.8 225
1.8 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 125 °C/W
RθJA Thermal Resistance, Junction to Ambient 357 556 °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
MPSH10 / MMBTH10
Electrical Characteristics TA = 25°C unless otherwise noted
Symb ol Parameter Test Conditions Min Max Un its
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Sustaining Voltage* IC = 1.0 m A , I B = 0 25 V
V(BR)CBO Col lec t or -B ase Breakd ow n Volt ag e IC = 1 00 µA, IE = 0 30 V
V(BR)EBO Em it ter - Bas e B r e akdown Voltage IE = 10 µA, IC = 0 3.0 V
ICBO C olle c tor Cu toff C u r ren t V CB = 2 5 V, IE = 0 100 nA
IEBO Emi tter Cutoff Current VEB = 2.0 V, IC = 0 100 nA
ON CHARACTERISTICS
hFE DC Cu r rent G ain IC = 4.0 m A , VCE = 1 0 V 60
VCE(sat)Col lector-Emitte r Sa turation Vo ltage IC = 4.0 m A, I B = 0.4 mA 0.5 V
VBE(on)Base-Emitter On Voltage IC = 4.0 m A, VCE = 1 0 V 0.95 V
SMALL SIGNAL CHARACTERISTICS
fTCurre nt Ga in - Ba ndwidth Product IC = 4.0 m A, V CE = 1 0 V,
f = 100 MH z 650 MHz
Ccb Collector-Base Capacitance VCB = 1 0 V, IE = 0, f = 1.0 MHz 0.7 pF
Crb Common-Base Feedback Capacitance VCB = 1 0 V, IE = 0, f = 1.0 MHz 0.35 0.65 pF
rb’CcCollector Base Time Constant IC = 4.0 m A , VCB = 1 0 V,
f = 31.8 MHz 9.0 pS
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
NPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=308.6 Ne=1.197 Ise=69.28E-18 Ikf=22.83m Xtb=1.5 Br=1.11
Nc=2 Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.558n
Tf=135.8p Itf=.27 Vtf=10 Xtf=30 Rb=10)
NPN RF Transistor
(continued)
MPSH10 / MMBTH10
NPN RF Transistor
(continued)
Typical Characteristics
Ty pical Pulsed Current Gai n
vs Collector Curren t
P42
0.1 0.2 0.5 1 2 5 10 20 50
0
20
40
60
80
100
I - COLLECTOR CURRENT (mA)
h - TYPICAL PUL SED CURRENT GAIN
C
FE
1 25 ° C
25 °C
- 40 °C
Vc e = 5V
Collector-Emitter Saturation
Voltage vs Collector Current
0.1 1 10 20
0.05
0.1
0.15
0.2
I - COLL EC TO R CURRENT (m A)
V - COLLECTOR-EMITTE R VOLTAGE ( V)
CESAT
25 °C
C
ββ = 10
125 °C
- 40 °C
Base-Emitter Saturation
Voltage vs Collect or Curre nt
P42
0.1 1 10 20
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
I - CO L L E CT O R CUR RE NT ( mA)
V - BA SE- EMI T TE R VOLTA GE (V)
BESAT
C
ββ = 10
25 °C
125 °C
- 40 °C
Collecto r -C ut o ff C ur re n t
vs Am b ient Te m per atu r e
25 50 75 100 125 150
0.1
1
10
T - AMBIENT TEMPERATURE ( C)
I - COL L ECTOR CU RREN T (n A)
A
V = 30V
CB
CBO
°
Base-Emit ter ON Voltage vs
Collect or Cur re nt
P42
0.01 0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER O N VOLTAGE (V)
BE(ON)
C
V = 5V
CE
25 °C
125 °C
- 40 °C
Power Dissipation vs
Ambient T emperature
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
T EMPERATURE ( C)
P - POWER DISSIP ATI ON (mW)
D
o
TO-92
SOT-23
MPSH10 / MMBTH10
NPN RF Transistor
(continued)
Common Base Y Parameters vs. Frequency
I nput Adm i t ta nce
P 42 (BASE)
100 200 500 1000
-120
-80
-40
0
40
80
120
f - FREQUENCY (MHz )
Y - INPUT ADMITTANCE (mmhos)
ib
V = 1 0V
CE
I = 5 mA
C
gib
bib
O utp ut Admittance
P 42 (BASE)
100 200 500 1000
0
2
4
6
8
10
12
f - FREQUENCY (MHz)
Y - OUTPUT ADMITTANCE (mmhos)
ob
V = 10V
CE
I = 5 mA
C
gob
bob
For ward Transfer Admittance
100 200 500 1000
-120
-80
-40
0
40
80
120
f - FREQUENCY (MHz)
Y - FORWARD ADMITTANCE (mmhos)
fb
V = 10V
CE
I = 5 mA
C
gfb
bfb
Reverse Transfer Adm ittance
(S)
100 200 500 1000
0
2
4
6
8
f - FREQUENCY (MHz )
Y - REVER SE ADM ITTANCE ( mmhos)
rb
V = 10V
CE
I = 5 mA
C
-grb
-brb
MPSH10 / MMBTH10
NPN RF Transistor
(continued)
Common Emitter Y Parameters vs. Frequency
Inp ut Admit ta n ce
100 200 500 1000
0
4
8
12
16
20
24
f - FREQUENCY (MHz)
Y - INPUT ADMITTANCE (mm ho s)
ie
V = 10V
CE
I = 2 mA
C gie
bie
Output Admittance
P42(EMITTER)
100 200 500 1000
0
1
2
3
4
5
6
f - FREQUENCY (MHz)
Y - OUTPUT ADMITTANCE (mmhos)
oe
V = 10V
CE
I = 2 mA
C
goe
boe
F or ward Transfer Admi t t a nce
P42(EMITTER)
100 200 500 1000
-60
-40
-20
0
20
40
60
f - FREQUENCY (MHz)
Y - FORWARD ADMI TTANCE (m mhos)
fe
V = 10V
CE
I = 2 mA
C
gfe
bfe
R ever se Transfer Adm i ttance
100 200 500 1000
0
0.2
0.4
0.6
0.8
1
1.2
f - FREQUENCY (MHz)
Y - REVERSE ADMITTANCE (mmh os)
re
V = 10V
CE
I = 2 mA
C
-gre
-bre
MPSH10 / MMBTH10
Test Circuits
1000 pF1000 pF
(NOTE 2) 175 pF
50 pF
2.2 KΩΩ
ΩΩ
Ω
- VCC
RFC (NOTE 1)
RFC
500 mHz Output
into 50ΩΩ
ΩΩ
Ω
VCC
NOTE 1: 2 turns No. 16 AWG wire, 3/8 inch OD, 1 1/4 inch long
NOTE 2: 9 turns No. 22 AWG wire, 3/16 inch OD, 1/2 inch long
FIGURE 1: Neutralized 200 MHz pF and NF Circuit
FIGURE 2: 500 MHz Oscillator Circuit
0.8-10 pF
1000 pF
2.0 pF
1000 pF
100 pF
0.8-10 pF
5.0-18 pF 1000 pF
1000 pF
1000 pF
2.0 KΩΩ
ΩΩ
Ω10 KΩΩ
ΩΩ
Ω
680 ΩΩ
ΩΩ
Ω
T1
Input
50 ΩΩ
ΩΩ
Ω
L1
L2
TUM
VCC = 12 V
L1 - L3 turns No. 16 wire, 1/2 inch L x 1/4 inch ID
tapped 1 1/2 turns from cold side
L2 - L6 turns No. 14 wire, 1 inch L x 1/4 inch ID
tapped 1 1/2 turns from cold side
T1 - Pri. 1 turn No. 16 wire
Sec. 1 turn No. 18 wire
NPN RF Transistor
(continued)
