TLP32 0, -2. -4 GaAs IRED & PHOTO-TRANSISTOR TENTATIVE DATA (TLP320) TELECOMMUNICATION Unit in mm OFFICE MACHINE TLP320 TELEPHONE USE EQUIPMENT 43 The TOSHIBA TLP320, -2 and -4 consists of a photo-transistor o optically coupled to a gallium arsenide infrared emitting diode. 4582025 The TLP320-2 offers two isolated channels in an eight lead plastic ahs DIP package, while the TLP320-4 provides four isolated channels in 12 a sixteen plastic DIP package. This is suitable for application of AC peasy es, . input current up to 150mA. ~~ e Ip Maximum Rating ; 150mA JEDEC = e Collector-Emitter Voltage : 55V (Min.) EIAJ . . TOSHIBA 11-5B1 @ Current Transfer Ratio : 25%(Min.) Ip=20mA) TLP3202 @ Isolation Voltage : 5000Vyms (Min.) 8 = 5 @ UL Recognized : File No. E67349 i ' 1 + 4 PIN CONFIGURATIONS (TOP VIEW) o- 298 20.23 a a] * (3 -h TLP320 TLP320-2 TLP320-4 ry. | ; | +t 025" 00s if 4 1 2 z | zxY= | as * 7.85~8.80 | 4,2.5440.25 eC 3 2 JEDEC 1 : ANODE 3 CATHODE EIAS = 2 : CATHODE 4 TOSHIBA 11-10C1 3: ONE ER TLP320-4 4: COLLECTOR 1 3: ANODE 5 CATHODE 2,4: CATHODE ANODE 5, 7: EMITTER 7 6, 8 : COLLECTOR 8 1, 3,5, 7 : ANODE CATHODE 2, 4, 6, 8 : CATHODE JEDEC ANODE 9, 11,13, 15 : EMITTER EIAI = 10, 12, 14, 16 : COLLECTOR TOSHIBA 11-20A1 270 TLP320, -2, -4 (TLP320) MAXIMUM RATINGS (Ta = 25C) RATING CHARACTERISTIC SYMBOL UNIT TLP320 TLP320-2, 4 Forward Current Ir 150 mA a Forward Current Derating 4Ip/C 1.5 (Ta2 25C) mA/C 4 |Pulse Forward Current Ipp +1(1004s pulse, 100pps) A Junction Temperature Tj 125 C Collector-Emitter Voltage VCEO 55 Vv - Emitter-Collector Voltage VECO 7 Vv 2 Collector Current I 80 mA |Collector Power Dissipation BMT Circuit) Pc 150 100 mW ic Q |Collector Power Dissipation Derating (1 Circuit, Taz 25) | 4PC/C 71S 1.0 mW /C Junction Temperature T; 125 C Storage Temperature Range Tstg _ 55~125 C Operating Temperature Range Topr 55~100 C Lead Soldering Temperature Tsol 260 (10s) C Total Package Power Dissipation Pr 250 200 mW Total Package Power Dissipation Derating (T'a = 25C) 4Pp/C 2.5 2.0 mW /C Isolation Voltage (Note 1) BVs 5000 (AC, Imin., RH= 60%) Vrms Note 1 : Device consider a two terminal : LED side pins shorted together and DETECTOR side pins shorted together. INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT a Forward Voltage VF Ip=+100mA 1.4 | 17 Vv a Forward Current Ip VE=+t0.7V 2.5 20 | vA Capacitance Cy V=0, f=1MHz 60 pF Collector-Emitter Ic =0. _ Vv 2 Breakdown Voltage VY (BR) CEO} 1C=0.5mA 5 |Emitter-Collector IV Ip=0. _ _ Vv 5 Breakdown Voltage (BR) ECO|IE=0.1mA 7 i) VcRp=24V 10 | 100 A B Collector Dark Current ICEO CE = Q VcE=24V, Ta=85C 2 50 | vA Capacitance Collector to Emitter CCE V=0, f=1MHz 0 Pp 271 TLP320, -2, -4 (TLP320) COUPLED ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Ic/Ip Ip= +20mA, VcR=1V 25 _ _ Current Transfer Ratio Ic/IF % Ip=+100mA, Vep=1V 20 _ 80 (High) Collector-Emitter Saturation Ig =2.4mA, Ip=+20mA _ 0.4 Vv It: VCE (sat) _ _ Vv ollage Ic =2.4mA, Ip= +100mA _ _ 0.4 Off-State Collector Current Ic (off) Ver=1t0.7V, Vcp=24V 1 10 | A . Ic (p= 20mA)/ CTR Symmetry (Note) | I (ratio) I p= +20mA) (Note) 0.5 1 2 ISOLATION CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. |MAX.| UNIT Capacitance Input to Output Cs Vg=0, f=1MHz 0.8; pF Isolation Resistance Rg Vg =500V 5x10}; 104) Q AC, 1 minute 5000) _ : ; ; Vrms Isolation Voltage BVS AC, 1 second, in oi! 10000] DC, 1 minute,in oi! _ 10000; Vdc (Note) Ici Ic Icg Up=Ir2, VCcR=1V) Ip 2 {] r VCE (ratio) = = _ ay C2 Icy Ip=Iry, Vog=1V) c c Ip2 o{] yo) 272 TLP320, -2, -4 (TLP320) SWITCHING CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX.| UNIT Rise Time ty 9 _ Fall Time t = = 3 _ f Voc=10V, Ic=2mA LS Turn-on Time ton RL = 1000 _ 3 Turn-off Time toff 3 _ Turn-on Time tON 2 Storage Time ts RL=1.9k0 (Fig.1) 15 _ BS Voc=5V, Irp=1l6mA Turn-off Time tOFF _ 25 _ Fig.1 SWITCHING TIME TEST CIRCUIT RL i Vor Von 7 4.5V 4 0.5V on | | LOFF RECOMMENDED OPERATING CONDITIONS CHARACTERISTIC SYMBOL | MIN, | TYP. |MAX. | UNIT Supply Voltage Vcc _ 5 24 Vv Forward Current Ip _ 20 120 | mA Collector Current Ic 1 10 | mA Operating Temperature Topr 25 85 C 273 TLP320, -2, -4 (TLP320) Ip (mA) ALLOWABLE FORWARD CURRENT 0 -20 & Zz i a a 5 1000 q = 500 z z< 300 Of gE iw oe Be 100 z 50 8 z 30 < 3 ier < -3.2 2. oO es -2.8 < gE gu _a4 ze wa ed fae 7 > S34 ae -16 og ao - ge 12 Sa Bid 2O -08 o0 cy -04 0.1 Q 20 40 60 AMBIENT TEMPERATURE Ipp - Dr 80 Ta 100 ec) 120 PULSE WIDTH = 100 sss Ta=25C (a7 3 10 3 1 o DUTY CYCLE RATIO Dr AVF/ATa Ip 09 1 3 FORWARD CURRENT Ip 10 (mA) 30 60 274 ALLOWABLE COLLECTOR POWER (mW) DISSIPATION Po (mA) IF FORWARD CURRENT Ipp (mA) PULSE FORWARD CURRENT Po - Ta 200 160} TLP320 TLP320 2, 4 80 40 20 0 20 40 60 AMBIENT TEMPERATURE 0.6 08 1.0 12 14 FORWARD VOLTAGE Vp Ipp VFpP 80 Ta 100 eC) PULSE WIDTHS lOys REPETITI Ta = 25C 0.6 1.0 1.4 18 PULSE FORWARD VOLTAGE VE 2.2 FREQUENCY = 100Hz 2.6 Vep (Vv) 120TLP320, -2, -4 (TLP320) Ic IF Ic/tp - Ip ~ Ta=25C _| Vor =5V l Ta=25C < 1 2 S 300 0.4 2 _ fe ~ ~ ZR 100 8 a 2 ge 5 8 => 30 oO ee us 5 g o g 10 a a a 5 5 a 5 8 3 ol 04 1 3 10 30 100 0.1 0.3 1 3 10 30 100 FORWARD CURRENT Ip (mA) FORWARD CURRENT Ip (mA) IcKO Ta VoE=24V 1 IcEO (#A) COLLECTOR DARK CURRENT 0 20 40 60 80 100 120 AMBIENT TEMPARETURE Ta (C) 275