SIEGET 45 BFP 540ECSP NPN Silicon RF Transistor Preliminary data For highest gain low noise amplifier XY at 1.8 GHz 4 Outstanding Gms = 21 dB 3 Noise Figure F = 0.9 dB 1 Gold metallization for high reliability SIEGET 45 GHz fT- Line 2 *=Chip Scale Package typical dimension: 1.0 x 0.6 x 0.5mm ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 540ECSP ATs Pin Configuration 1=B 2=E 3=C Package 4=E E-CSP Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 4.5 Collector-base voltage VCBO 14 Emitter-base voltage VEBO 1 Collector current IC 80 Base current IB 4 Total power dissipation, TS = tbd C 1) Ptot tbd mW Junction temperature Tj 150 C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 V mA Thermal Resistance Junction - soldering point RthJS tbd K/W 1T is measured on the emitter lead at the soldering point to the pcb S 1 Aug-23-2000 SIEGET 45 BFP 540ECSP Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. 4.5 5 6.5 V ICBO - - 200 nA IEBO - - 70 A hFE 50 110 200 - fT - 29 - GHz Ccb - tbd - pF Cce - tbd - Ceb - tbd - F - 0.9 - Gms - 21 - |S21|2 - 18.5 - DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 20 mA, VCE = 3.5 V V(BR)CEO AC Characteristics (verified by random sampling) Transition frequency IC = 50 mA, VCE = 4 V, f = 1 GHz Collector-base capacitance VCB = 2 V, f = 1 MHz Collector-emitter capacitance VCE = 2 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz Power gain, maximum stable 1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Insertion power gain IC = 20 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZL = 50 Third order intercept point at output VCE = 2 V, f = 1.8 GHz, ZS =ZSopt, ZL =ZLopt , IC = 20 mA IC = 7 mA 1dB compression point VCE = 2 V, f = 1.8 GHz, ZS =ZSopt, ZL =ZLopt , IC = 20 mA IC = 7 mA dB dBm IP3 - 24 20 - - 12 4 - P-1dB 1G ms = |S21 / S12 | 2 Aug-23-2000