SEMICONDUCTOR MMBTA05 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. FEATURES E B L L Complementary to MMBTA55. H UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 6 V Collector Current IC 500 mA Emitter Current IE -500 mA PC * 350 mW Junction Temperature Tj 150 Storage Temperature Tstg -55 150 Collector Power Dissipation * : Package Mounted On 99.5% Alumina 10 8 P P J RATING M K SYMBOL N CHARACTERISTIC 1 ) C MAXIMUM RATING (Ta=25 3 G A 2 D Driver Stage Application of 20 to 25 Watts Amplifiers. MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 DIM A B C D E G H J K L M N P 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 0.6mm. Marking Lot No. ACX Type Name ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=60V, IE=0 - - 100 nA Emitter Cut-off Current ICEO VCE=60V, IB=0 - - 100 nA V(BR)CEO IC=5mA, IB=0 60 - - V hFE(1) VCE=1V, IC=10mA 100 - - hFE(2) VCE=1V, IC=100mA 100 - - VCE(sat) IC=100mA, IB=10mA - - 0.25 V Base-Emitter Voltage VBE VCE=1V, IC=100mA - - 1.2 V Transition Frequency fT VCE=1V, IC=10mA 80 - - MHz - 10 - pF Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Collector Output Capacitance 2003. 7. 21 Revision No : 2 Cob VCB=10V, IE=0, f=1MHz 1/1