2003. 7. 21 1/1
SEMICONDUCTOR
TECHNICAL DATA
MMBTA05
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
DRIVER STAGE AMPLIFIER APPLICATIONS.
VOLTAGE AMPLIFIER APPLICATIONS.
FEATURES
Complementary to MMBTA55.
Driver Stage Application of 20 to 25 Watts Amplifiers.
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
23
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=60V, IE=0 - - 100 nA
Emitter Cut-off Current ICEO VCE=60V, IB=0 -- 100 nA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=5mA, IB=0 60 - - V
DC Current Gain
hFE(1) VCE=1V, IC=10mA 100 - -
hFE(2) VCE=1V, IC=100mA 100 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - - 0.25 V
Base-Emitter Voltage VBE VCE=1V, IC=100mA - - 1.2 V
Transition Frequency fTVCE=1V, IC=10mA 80 - - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 10 - pF
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC500 mA
Emitter Current IE-500 mA
Collector Power Dissipation PC *350 mW
Junction Temperature Tj150
Storage Temperature Tstg -55 150
* : Package Mounted On 99.5% Alumina 10 8 0.6mm.
Type Name
Marking
Lot No.
ACX
