CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.
Copyright © Harris Corporation 1995
SEMICONDUCTOR
1
HA5022/883
Dual 125MHz Video Current
Feedback Amplifier with Disable
Description
The HA5022/883 is a dual version of the popular Harris HA-
5020. It features wide bandwidth and high slew rate, and is
optimized for video applications and gains between 1 and
10. It is a current feedback amplifier and thus yields less
bandwidth degradation at high closed loop gains than volt-
age feedback amplifiers.
The low differential gain and phase, 0.1dB gain flatness, and
ability to drive two back terminated 75Ωcables, make this
amplifier ideal for demanding video applications.
The HA5022/883 also features a disable function that signifi-
cantly reduces supply current while forcing the output to a
true high impedance state. This functionality allows 2:1 video
multiplexers to be implemented with a single IC.
The current feedback design allows the user to take advan-
tage of the amplifier’s bandwidth dependency on the feed-
back resistor. By reducing RF, the bandwidth can be
increased to compensate for decreases at higher closed
loop gains or heavy output loads.
Ordering Information
PART
NUMBER TEMPERATURE
RANGE PACKAGE
HA5022MJ/883 -55oC to +125oC 16 Lead CerDIP
Features
• This Circuit is Processed in Accordance to MIL-STD-
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
• Dual Version of HA-5020
• Individual Output Enable/Disable
• Wide Unity Gain Bandwidth . . . . . . . . . . . . . . . 125MHz
• Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 475V/µs
• Differential Gain. . . . . . . . . . . . . . . . . . . . . . . . . . .0.03%
• Differential Phase. . . . . . . . . . . . . . . . . . . . . . . 0.03 Deg.
• Supply Current (per Amplifier) . . . . . . . . . . . . . . .7.5mA
• Crosstalk Rejection at 10MHz. . . . . . . . . . . . . . . . -60dB
• ESD Protection. . . . . . . . . . . . . . . . . . . . . . . . . . . .2000V
• Guaranteed Specifications at ±5V Supplies
Applications
• Video Multiplexers; Video Switching and Routing
• Video Gain Block
• Video Distribution Amplifier/RGB Amplifier
• Flash A/D Driver
• Current to Voltage Converter
• Radar and Imaging Systems
• Medical Imaging
January 1995
Pinout
HA5022/883
(CERDIP)
TOP VIEW
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
-IN1
+IN1
DIS1
V-
DIS2
+IN2
NC
-IN2
OUT1
NC
V+
NC
NC
OUT2
NC
NC
+
-
+
-
Spec Number 511107-883
File Number 3729.1
2
Specifications HA5022/883
Spec Number 511107-883
Absolute Maximum Ratings Thermal Information
Voltage Between V+ and V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V-
Output Current . . . . . . . . . . . . . . . . . . . . Full Short Circuit Protected
Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .< 2000V
Storage Temperature Range . . . . . . . . . . . . . .-65oC ≤ TA≤ +150oC
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC
Thermal Resistance θJA θJC
CerDIP Package . . . . . . . . . . . . . . . . . 75oC/W 20oC/W
Maximum Package Power Dissipation at +75oC
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33W
Package Power Dissipation Derating Factor above +75oC
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.3mW/oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Supply Voltage (±VS) . . . . . . . . . . . . . . . . . . . . ±5V to ±15V
Operating Temperature Range. . . . . . . . . . . . .-55oC≤ TA≤ +125oCVINCM ≤ 1/2(V+ - V-) RL≥ 50Ω
VDISABLE = V+ or 0V RF= 1kΩ
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: VSUPPLY =±5V, AV= +1, RF=1kΩ, RSOURCE = 0Ω, RL = 400Ω, VOUT = 0V, VDISABLE = V+, Unless Otherwise Specified.
PARAMETERS SYMBOL CONDITIONS GROUP A
SUBGROUPS TEMPERATURE
LIMITS
UNITSMIN MAX
Input Offset Voltage VIO VCM = 0V 1 +25oC-33mV
2, 3 +125oC, -55oC-5 5 mV
Common Mode
Rejection Ratio CMRR ∆VCM =±2.5V
V+ = 2.5V, V- = -7.5V
V+ = 7.5V, V- = -2.5V
1 +25oC53- dB
2 +125oC38- dB
∆V
CM =±2.25V
V+ = 2.75V, V- = -7.25V
V+ = 7.25V, V- = -2.75V
3 -55oC38-dB
Power Supply
Rejection Ratio PSRR ∆VSUP =±1.5V
V+ = 6.5V, V- = -5V
V+ = 3.5V, V- = -5V
1 +25oC60- dB
2, 3 +125oC, -55oC55 - dB
Delta Input Offset
Voltage
Between Channels
∆VIO VCM = 0 1 +25oC - 3.5 mV
2,3 +125oC, -55oC - 3.5 mV
Non-Inverting Input (+IN)
Current IBSP VCM = 0V 1 +25oC-88µA
2, 3 +125oC, -55oC -20 20 µA
+IN Current Common
Mode Sensitivity CMSIBP ∆VCM =±2.5V
V+ = 2.5V, V- = -7.5V
V+ = 7.5V, V- = -2.5V
1 +25oC - 0.15 µA/V
2 +125oC - 2.0 µA/V
∆VCM =±2.25V
V+ = 2.75V, V- = -7.25V
V+ = 7.25V, V- = -2.75V
3 -55oC - 2.0 µA/V
∆Inverting Input (-IN)
Current Between
Channels
∆IBSN VCM = 0 1 +25oC -15 15 µA
2, 3 +125oC -30 30 µA
Inverting Input (-IN)
Current IBSN VCM = 0V 1 +25oC -12 12 µA
2, 3 +125oC, -55oC -30 30 µA
3
Specifications HA5022/883
-IN Current Common
Mode Sensitivity CMSIBN ∆VCM =±2.5V
V+ = 2.5V, V- = -7.5V
V+ = 7.5V, V- = -2.5V
1 +25oC - 0.4 µA/V
2 +125oC-5µA/V
∆VCM =±2.25V
V+ = 2.75V, V- = -7.25V
V+ = 7.25V, V- = -2.75V
3 -55oC-5µA/V
-IN Current Power
Supply Sensitivity PSSIBN ∆VSUP =±1.5V
V+ = 6.5V, V- = -5V
V+ = 3.5V, V- = -5V
1 +25oC - 0.2 µA/V
2, 3 +125oC, -55oC - 0.5 µA/V
+IN Current Power
Supply Sensitivity PSSIBP ∆VSUP =±1.5V
V+ = 6.5V, V- = -5V
V+ = 3.5V, V- = -5V
1 +25oC - 0.1 µA/V
2, 3 +125oC, -55oC - 0.3 µA/V
Output Voltage
Swing VOP AV = +1
RL = 150ΩVIN = -3V 1 +25oC 2.5 - V
VIN = -3V 2, 3 +125oC, -55oC 2.5 - V
VON AV = +1
RL = 150ΩVIN = +3V 1 +25oC - -2.5 V
VIN = +3V 2, 3 +125oC, -55oC - -2.5 V
Short Circuit Output
Current +ISC VIN =±2.5V
VOUT =0V 1 +25oC50-mA
2, 3 +125oC, -55oC50 - mA
-ISC VIN =±2.5V
VOUT =0V 1 +25oC - -40 mA
2, 3 +125oC, -55oC - -40 mA
Output Current +IOUT Note 1 1 +25oC20-mA
2, 3 +125oC, -55oC 16.6 - mA
-IOUT Note 1 1 +25oC - -20 mA
2, 3 +125oC, -55oC - -16.6 mA
Quiescent Power
Supply Current ICC RL= 400Ω1 +25oC - 10 mA/Op Amp
2, 3 +125oC, -55oC - 10 mA/Op Amp
IEE RL= 400Ω1 +25oC -10 - mA/Op Amp
2, 3 +125oC, -55oC -10 - mA/Op Amp
Transimpedance +AZOL1 RL= 400Ω
VOUT =±2.5V 1 +25oC1-MΩ
2 +125oC 0.5 - MΩ
VOUT =±2.25V 3 -55oC 0.5 - MΩ
-AZOL1 RL= 400Ω
VOUT =±2.5V 1 +25oC1-MΩ
2 +125oC 0.5 - MΩ
VOUT =±2.25V 3 -55oC 0.5 - MΩ
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: VSUPPLY =±5V, AV= +1, RF=1kΩ, RSOURCE = 0Ω, RL = 400Ω, VOUT = 0V, VDISABLE = V+, Unless Otherwise Specified.
PARAMETERS SYMBOL CONDITIONS GROUP A
SUBGROUPS TEMPERATURE
LIMITS
UNITSMIN MAX
Spec Number 511107-883
4
Specifications HA5022/883
Disabled Output Current +ILEAK VIN = 0V,
VOUT = +2.5V
RL= Open, VDIS =0V
1 +25oC-1µA
2, 3 +125oC, -55oC- 2 µA
-ILEAK VIN = 0V,
VOUT = -2.5V
RL= Open, VDIS =0V
1 +25oC-1µA
2, 3 +125oC, -55oC- 2 µA
Disable Pin Input Current ILOGIC VDIS = 0V 1 +25oC -1.0 - mA
2, 3 +125oC, -55oC -1.5 - mA
Minimum DISABLE Pin
Current to Disable IDIS Note 2 1 +25oC - 350 µA
2, 3 +125oC, -55oC - 350 µA
Maximum DISABLE Pin
Current to Enable IEN Note 3 1 +25oC20- µA
2, 3 +125oC, -55oC20 - µA
Disabled Power Supply
Current ICCDIS RL= Open, VDIS = 0V 1 +25oC - 7.5 mA/Op Amp
2, 3 +125oC, -55oC - 7.5 mA/Op Amp
IEEDIS RL= Open, VDIS = 0V 1 +25oC 7.5 - mA/Op Amp
NOTES:
1. Guaranteed from VOUT Test with RL= 150Ω, by: IOUT =V
OUT/150Ω.
2. RL = 100Ω, VIN = 2.5V. This is the minimum current which must be pulled out of theDisable pin in order to disable the output. The output
is considered disabled when -10mV ≤ VOUT ≤ +10mV.
3. VIN = 0V. This is the maximum current that can be pulled out of theDisable pin with the HA5022/883 remaining enabled. The HA5022/883
is considered disabled when the supply current has decreased by at least 0.5mA.
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 2 Intentionally Left Blank.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: VSUPPLY = ±5V, AV = +2, RF= 681Ω, RL = 400Ω, Unless Otherwise Specified.
PARAMETERS SYMBOL CONDITIONS NOTES TEMPERATURE
LIMITS
UNITSMIN MAX
-3dB Bandwidth BW(+1) AV = +1, RF = 1K
VOUT =100mVRMS
1 +125oC, -55oC 70 - MHz
BW(+2) AV = +2,
VOUT = 100mVRMS
1 +125oC, -55oC 70 - MHz
Gain Flatness GF5 AV = +2, f ≤5MHz
VOUT = 100mVRMS
1 +125oC, -55oC-±0.045 dB
GF10 AV = +2, f ≤10MHz
VOUT = 100mVRMS
1 +125oC, -55oC-±0.085 dB
GF20 AV = +2, f ≤20MHz
VOUT = 100mVRMS
1 +125oC, -55oC-±0.65 dB
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: VSUPPLY =±5V, AV= +1, RF=1kΩ, RSOURCE = 0Ω, RL = 400Ω, VOUT = 0V, VDISABLE = V+, Unless Otherwise Specified.
PARAMETERS SYMBOL CONDITIONS GROUP A
SUBGROUPS TEMPERATURE
LIMITS
UNITSMIN MAX
Spec Number 511107-883
5
Specifications HA5022/883
Slew Rate +SR(+1) AV = +1, RF = 1K
VOUT = -2V to +2V 1, 4 +125oC, -55oC 300 - V/µs
-SR(+1) AV = +1, RF = 1K
VOUT = +2V to -2V 1, 4 +125oC, -55oC 270 - V/µs
+SR(+2) AV = +2, VOUT = -2V to +2V 1, 4 +125oC, -55oC 465 - V/µs
-SR(+2) AV = +2, VOUT = +2V to -2V 1, 4 +125oC, -55oC 350 - V/µs
Rise and Fall Time TRAV = +2, VOUT =-0.5V to -0.5V 1, 2 +125oC, -55oC - 5.5 ns
TFAV = +2, VOUT =+0.5V to +0.5V 1, 2 +125oC, -55oC - 6.0 ns
Overshoot +OS AV = +2, VOUT = -0.5V to +0.5V 1, 3 +125oC, -55oC - 35 %
-OS AV = +2, VOUT =+0.5V to -0.5V 1, 3 +125oC, -55oC - 27 %
Propagation Delay +TPAV = +2, RF = 681Ω
VOUT = 0V to 1V 1, 2 +125oC, -55oC - 10 ns
-TPAV = +2, RF = 681Ω
VOUT = 1V to 0V 1, 2 +125oC, -55oC - 9.5 ns
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot-to-lot and within lot variation.
2. Measured between 10% and 90% points.
3. For 200ps input transition times. Overshoot decreases as input transition times increase, especially for AV= +1. Please refer to
Performance Curves.
4. Measured between 25% and 75% points.
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (SEE TABLE 1)
Interim Electrical Parameters (Pre Burn-In) 1
Final Electrical Test Parameters 1 (Note 1), 2, 3, 4
Group A Test Requirements 1, 2, 3, 4
Groups C and D Endpoints 1
NOTE:
1. PDA applies to Subgroup 1 only.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Characterized at: VSUPPLY = ±5V, AV = +2, RF= 681Ω, RL = 400Ω, Unless Otherwise Specified.
PARAMETERS SYMBOL CONDITIONS NOTES TEMPERATURE
LIMITS
UNITSMIN MAX
Spec Number 511107-883
6
HA5022/883
Test Circuits and Waveforms
FIGURE 1. TEST CIRCUIT (Applies to Table 1)
FIGURE 2. TEST CIRCUIT FOR TRANSIMPEDANCE MEASUREMENTS
FIGURE 3. SMALL SIGNAL PULSE RESPONSE CIRCUIT FIGURE 4. LARGE SIGNAL PULSE RESPONSE CIRCUIT
FIGURE 5. SMALL SIGNAL RESPONSE
Vertical Scale: VIN = 100mV/Div., VOUT = 100mV/Div.
Horizontal Scale: 20ns/Div.
FIGURE 6. LARGE SIGNAL RESPONSE
Vertical Scale: VIN = 1V/Div., VOUT = 1V/Div.
Horizontal Scale: 50ns/Div.
V+
ICC 10 0.1
13
DUT
-
+
1, 7
2, 6
4
1K
VIN
-
+
HA-5177
200pF
100K (0.01%)
VZ
VXx100 -
+470pF
VIO = VX
100
+IBIAS = VZ
100K 10 0.1
V-
IEE
-IBIAS = VX
50K K6
400 100
VOUT
NOTE: All Resistors = ±1% (Ω)
All Capacitors = ±10% (µF)
Unless Otherwise Noted
16, 10
+
+
0.1
100
0.1
K1 NC
1K
0.1
1K
510
510
0.1
K2
2
1
K2 = POSITION 1:
K2 = POSITION 2:
0.1
Chip Components Recommended
K5
50
K3
3, 5
0.1
VD
NC
+
-
50
50
DUT
HP4195
NETWORK
ANALYZER
VIN VOUT
RL
RF, 1K
100Ω
50Ω
+
-DUT VIN VOUT
RL
RF, 681 400Ω
50Ω
+
-DUT
RI
681Ω
Spec Number 511107-883
7
HA5022/883
Burn-In Circuit
HA5022MJ/883 CERAMIC DIP
NOTES:
R1 = R2 = R4 = R5 = 1kΩ,±5% (Per Socket)
R3 = R6 = 10kΩ,±5% (Per Socket)
C1 = C2 = 0.01µF (Per Socket) or 0.1µF (Per Row) Minimum
D1 = D2 = 1N4002 or Equivalent (Per Board)
D3 = D4 = 1N4002 or Equivalent (Per Socket)
V+ = +5.5V ± 0.5V
V- = -5.5V ± 0.5V
V+
C1 D1
D2 C2
V- D4 D3
R2
R1
R3
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
R4
R5
R6
+
-
+
-
Spec Number 511107-883
8
HA5022/883
Spec Number 511107-883
Die Characteristics
DIE DIMENSIONS:
65 x 100 x 19 mils ± 1 mils
1650 x 2540 x 483µm± 25.4µm
METALLIZATION:
Type: Metal 1: AlCu (1%), Metal 2: AlCu (1%)
Thickness: Metal 1: 8kű0.4kÅ, Metal 2: 16kű0.8kÅ
WORST CASE CURRENT DENSITY:
1.62 x 105 A/cm2 at 35mA
SUBSTRATE POTENTIAL (Powered Up): V-
GLASSIVATION:
Type: Nitride
Thickness: 4kű 0.4kÅ
TRANSISTOR COUNT: 124
PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA5022/883
-IN1
V+
OUT1
+IN2
DIS2
V-
NC
OUT2
-IN2
DIS1
+IN1
9
HA5022/883
Spec Number 511107-883
NOTES:
1. Index area: A notch or a pin one identification mark shall be locat-
ed adjacent to pin one and shall be located within the shaded
area shown. The manufacturer’s identification shall not be used
as a pin one identification mark.
2. The maximum limits of lead dimensions b and c or M shall be
measured at the centroid of the finished lead surfaces, when
solder dip or tin plate lead finish is applied.
3. Dimensions b1 and c1 apply to lead base metal only. Dimension
M applies to lead plating and finish thickness.
4. Corner leads (1, N, N/2, and N/2+1) may be configured with a
partial lead paddle. For this configuration dimension b3 replaces
dimension b2.
5. This dimension allows for off-center lid, meniscus, and glass
overrun.
6. Dimension Q shall be measured from the seating plane to the
base plane.
7. Measure dimension S1 at all four corners.
8. N is the maximum number of terminal positions.
9. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
10. Controlling dimension: INCH.
bbb C A - B
S
c
Q
L
A
SEATING
BASE
D
PLANE
PLANE
-D-
-A-
-C-
-B-
α
D
E
S1
b2 b
A
e
M
c1
b1
(c)
(b)
SECTION A-A
BASE
LEAD FINISH
METAL
eA/2
A
M
S S
ccc C A - B
MD
SSaaa C A - B
MD
SS
eA
F16.3 MIL-STD-1835 GDIP1-T16 (D-2, CONFIGURATION A)
16 LEAD CERAMIC DUAL-IN-LINE FRIT SEAL PACKAGE
SYMBOL
INCHES MILLIMETERS
NOTESMIN MAX MIN MAX
A - 0.200 - 5.08 -
b 0.014 0.026 0.36 0.66 2
b1 0.014 0.023 0.36 0.58 3
b2 0.045 0.065 1.14 1.65 -
b3 0.023 0.045 0.58 1.14 4
c 0.008 0.018 0.20 0.46 2
c1 0.008 0.015 0.20 0.38 3
D - 0.840 - 21.34 5
E 0.220 0.310 5.59 7.87 5
e 0.100 BSC 2.54 BSC -
eA 0.300 BSC 7.62 BSC -
eA/2 0.150 BSC 3.81 BSC -
L 0.125 0.200 3.18 5.08 -
Q 0.015 0.060 0.38 1.52 6
S1 0.005 - 0.13 - 7
α90o105o90o105o-
aaa - 0.015 - 0.38 -
bbb - 0.030 - 0.76 -
ccc - 0.010 - 0.25 -
M - 0.0015 - 0.038 2 , 3
N16 168
Rev. 0 4/94
Ceramic Dual-In-Line Frit Seal Packages (CerDIP)
The information contained in this section has been developed through characterization by Harris Semiconductor and is for use as
application and design information only. No guarantee is implied.
DESIGN INFORMATION
January 1995
SEMICONDUCTOR
10
Typical Performance Curves
VSUPPLY = ±5V, AV = +1, RF = 1kΩ, RL = 400Ω, TA = 25oC, Unless Otherwise Specified.
FIGURE 1. NON-INVERTING FREQUENCY RESPONSE FIGURE 2. INVERTING FREQUENCY RESPONSE
FIGURE 3. PHASE RESPONSE AS A FUNCTION OF
FREQUENCY FIGURE 4. BANDWIDTH AND GAIN PEAKING vs FEEDBACK
RESISTANCE
FIGURE 5. BANDWIDTH AND GAIN PEAKING vs FEEDBACK
RESISTANCE FIGURE 6. BANDWIDTH AND GAIN PEAKING vs LOAD
RESISTANCE
+5
+4
+3
+2
+1
0
-1
-2
-3
-4
-5
NORMALIZED GAIN (dB)
FREQUENCY (MHz)
2 10 100 200
VOUT = 0.2VP-P
CL = 10pF AV = 1, RF = 1kΩ
AV = 2, RF = 681Ω
AV = 5, RF = 1kΩ
AV = 10, RF = 383Ω
+5
+4
+3
+2
+1
0
-1
-2
-3
-4
-5 2 10 100 200
FREQUENCY (MHz)
NORMALIZED GAIN (dB)
VOUT = 0.2VP-P
CL = 10pF
RF = 750ΩAV = -1
AV = -2
AV = -10
AV = -5
FREQUENCY (MHz)
2 10 100 200
0
-45
-90
-135
-100
-225
-270
-315
-360
+180
+135
+90
0
-45
-90
-135
+45
-180
NONINVERTING PHASE (DEGREES)
INVERTING PHASE (DEGREES)
VOUT = 0.2VP-P
CL = 10pF
AV = +10, RF = 383Ω
AV = -10, RF = 750Ω
AV = -1, RF = 750Ω
AV = +1, RF = 1kΩ
FEEDBACK RESISTOR (Ω)
500 700 900 1100 1300 1500
140
130
120 10
5
0
-3dB BANDWIDTH (MHz)
GAIN PEAKING (dB)
VOUT = 0.2VP-P
CL = 10pF
-3dB BANDWIDTH
GAIN PEAKING
AV = +1
FEEDBACK RESISTOR (Ω)
-3dB BANDWIDTH (MHz)
GAIN PEAKING (dB)
100
95
90
0
350 500 650 800 950 1100
-3dB BANDWIDTH
GAIN PEAKING
VOUT = 0.2VP-P
CL = 10pF
AV = +2
5
10
LOAD RESISTOR (Ω)
-3dB BANDWIDTH (MHz)
GAIN PEAKING (dB)
130
120
110
100
90
800 200 400 600 800 1000
6
4
2
0
VOUT = 0.2VP-P
CL = 10pF
-3dB BANDWIDTH
GAIN PEAKING
AV = +1
HA5022
Dual 125MHz Video Current
Feedback Amplifier with Disable
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Harris Semiconductor and is for use as
application and design information only. No guarantee is implied.
11
HA5022
FIGURE 7. BANDWIDTH vs FEEDBACK RESISTANCE FIGURE 8. SMALL SIGNAL OVERSHOOT vs LOAD
RESISTANCE
FIGURE 9. DIFFERENTIAL GAIN vs SUPPLY VOLTAGE FIGURE 10. DIFFERENTIAL PHASE vs SUPPLY VOLTAGE
FIGURE 11. DISTORTION vs FREQUENCY FIGURE 12. REJECTION RATIOS vs FREQUENCY
Typical Performance Curves
VSUPPLY = ±5V, AV = +1, RF = 1kΩ, RL = 400Ω, TA = 25oC, Unless Otherwise Specified.
(Continued)
80
60
40
20
0200 350 500 650 800 950
-3dB BANDWIDTH (MHz)
FEEDBACK RESISTOR (Ω)
VOUT = 0.2VP-P
CL = 10pF
AV = +10
LOAD RESISTANCE (Ω)
0 200 400 600 800 1000
16
6
0
OVERSHOOT (%)
VOUT = 0.1VP-P
CL = 10pF VSUPPLY = ±5V, AV = +2
VSUPPLY = ±15V, AV = +1
VSUPPLY = ±5V, AV = +1
VSUPPLY = ±15V, AV = +2
12
SUPPLY VOLTAGE (V)
3 5 7 9 11 13 15
0.10
0.08
0.06
0.04
0.02
0.00
DIFFERENTIAL GAIN (%)
FREQUENCY = 3.58MHz
RL = 75Ω
RL = 150Ω
RL = 1kΩ
0.08
0.06
0.04
0.02
0.003 5 7 9 11 13 15
SUPPLY VOLTAGE (V)
DIFFERENTIAL PHASE (DEGREES)
RL = 1kΩ
RL = 75Ω
RL = 150Ω
FREQUENCY = 3.58MHz
-40
-50
-60
-70
-80
-90
0.3 1 10
FREQUENCY (MHz)
DISTORTION (dBc)
VOUT = 2.0VP-P
CL = 30pF
HD3
HD2
3RD ORDER IMD
HD2
HD3
FREQUENCY (MHz)
0
-10
-20
-30
-40
-50
-60
-70
-80
REJECTION RATIO (dB)
0.001 0.01 0.1 1 10 30
AV = +1
CMRR
POSITIVE PSRR
NEGATIVE PSRR
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Harris Semiconductor and is for use as
application and design information only. No guarantee is implied.
12
HA5022
FIGURE 13. PROPAGATION DELAY vs TEMPERATURE FIGURE 14. PROPAGATION DELAY vs SUPPLY VOLTAGE
FIGURE 15. SLEW RATE vs TEMPERATURE FIGURE 16. NON-INVERTING GAIN FLATNESS vs FREQUENCY
FIGURE 17. INVERTING GAIN FLATNESS vs FREQUENCY FIGURE 18. INPUT NOISE CHARACTERISTICS
Typical Performance Curves
VSUPPLY = ±5V, AV = +1, RF = 1kΩ, RL = 400Ω, TA = 25oC, Unless Otherwise Specified.
(Continued)
TEMPERATURE (oC)
-50 -25 0 +25 +50 +75 +100 +125
8.0
7.5
7.0
6.5
6.0
PROPAGATION DELAY (ns)
RL = 100Ω
VOUT = 1.0VP-P
AV = +1
SUPPLY VOLTAGE (V)
PROPAGATION DELAY (ns)
12
10
8
6
43 5 7 9 11 13 15
RLOAD = 100Ω
VOUT = 1.0VP-P
AV = +10, RF = 383Ω
AV = +2, RF = 681Ω
AV = +1, RF =1kΩ
TEMPERATURE (oC)
-50 -25 0 +25 +50 +75 +100 +125
500
450
400
350
300
250
200
150
100
SLEW RATE (V/µs)
VOUT = 20VP-P
+ SLEW RATE
- SLEW RATE
FREQUENCY (MHz)
51015202530
+0.8
+0.6
+0.4
+0.2
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
NORMALIZED GAIN (dB)
VOUT = 0.2VP-P
CL = 10pF
AV= +2, RF = 681Ω
AV= +5, RF = 1kΩ
AV = +1, RF = 1kΩ
AV = 10, RF =383Ω
+0.8
+0.6
+0.4
+0.2
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
NORMALIZED GAIN (dB)
FREQUENCY (MHz)
51015202530
V
OUT = 0.2VP-P
CL = 10pF
AV = -1
AV = -2
AV = -5
AV = -10
RF = 750Ω
FREQUENCY (kHz)
0.01 0.1 1 10 100
VOLTAGE NOISE (nV/√Hz)
CURRENT NOISE (pA/√Hz)
100
80
60
40
20
0
1000
800
600
400
200
0
AV = 10, RF = 383Ω
-INPUT NOISE CURRENT
+INPUT NOISE CURRENT
+INPUT NOISE VOLTAGE
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Harris Semiconductor and is for use as
application and design information only. No guarantee is implied.
13
HA5022
FIGURE 19. INPUT OFFSET VOLTAGE vs TEMPERATURE FIGURE 20. +INPUT BIAS CURRENT vs TEMPERATURE
FIGURE 21. -INPUT BIAS CURRENT vs TEMPERATURE FIGURE 22. TRANSIMPEDANCE vs TEMPERATURE
FIGURE 23. SUPPLY CURRENT vs SUPPLY VOLTAGE FIGURE 24. REJECTION RATIO vs TEMPERATURE
Typical Performance Curves
VSUPPLY = ±5V, AV = +1, RF = 1kΩ, RL = 400Ω, TA = 25oC, Unless Otherwise Specified.
(Continued)
1.5
1.0
0.5
0.0-60 -40 -20 0 +40 +60 +80 +100 +120 +140+20
VIO (mV)
TEMPERATURE (oC)
2
0
-2
-4-60 -40 -20 0 +40 +60 +80 +100 +120 +140+20
BIAS CURRENT (µA)
TEMPERATURE (oC)
22
20
18
16
-60 -40 -20 0 +40 +60 +80 +100 +120 +140+20
TEMPERATURE (oC)
BIAS CURRENT (µA)
TEMPERATURE (oC)
4000
3000
2000
1000
TRANSIMPEDANCE (kΩ)
-60 -40 -20 0 +40 +60 +80 +100 +120 +140+20
34 5 6 7 8 9 10 11 12 13 14 15
25
20
15
10
5
ICC (mA)
SUPPLY VOLTAGE (V)
+125oC
+55oC
+25oC
58
60
62
64
66
68
70
72
74
-100 -50 0 +50 +100 +150
+PSRR
-PSRRN
CMRR
+200 +250
TEMPERATURE (oC)
REJECTION RATIO (dB)
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Harris Semiconductor and is for use as
application and design information only. No guarantee is implied.
14
HA5022
FIGURE 25. SUPPLY CURRENT vs DISABLE INPUT VOLTAGE FIGURE 26. OUTPUT SWING vs TEMPERATURE
FIGURE 27. OUTPUT SWING vs LOAD RESISTANCE FIGURE 28. INPUT OFFSET VOLTAGE CHANGE BETWEEN
CHANNELS vs TEMPERATURE
FIGURE 29. INPUT BIAS CURRENT CHANGE BETWEEN
CHANNELS vs TEMPERATURE FIGURE 30. DISABLE SUPPLY CURRENT vs SUPPLY
VOLTAGE
Typical Performance Curves
VSUPPLY = ±5V, AV = +1, RF = 1kΩ, RL = 400Ω, TA = 25oC, Unless Otherwise Specified.
(Continued)
10 2 3 4 5 6 7 8 9 10 11 12 13 14 15
DISABLE INPUT VOLTAGE (V)
40
30
20
10
0
SUPPLY CURRENT (mA)
+5V +10V +15V
4.0
3.8
3.6-60 -40 -20 0 +40 +60 +80 +100 +120 +140+20
TEMPERATURE (oC)
OUTPUT SWING (V)
0.01 0.10 1.00 10.00
30
20
10
0
VOUT (VP-P)
LOAD RESISTANCE (kΩ)
VCC = ±15V
VCC = ±10V
VCC = ±4.5V
-60 -40 -20 0 +40 +60 +80 +100 +120 +140+20
1.2
1.1
1.0
0.9
0.8
VIO (mV)
TEMPERATURE (oC)
-60 -40 -20
1.5
1.0
0.5
0.0
TEMPERATURE (oC)
∆BIAS CURRENT (µA)
+40 +60 +80 +100 +120 +140+20
03456789101112131415
30
25
20
15
10
5
SUPPLY VOLTAGE (V)
ICC (mA)
-55oC
+25oC
+125oC