DS30251 Rev. A-2 1 of 2 BC856AW - BC858CW
BC856AW - BC858CW
PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on ourwebsite at http://www.diodes.com/datasheets/ap02001.pdf.
2. Current gain subgroup “C” is not available for BC856W.
Characteristic Symbol Value Unit
Collector-Base Voltage BC856
BC857
BC858
VCBO
-80
-50
-30
V
Collector-Emitter Voltage BC856
BC857
BC858
VCEO
-65
-45
-30
V
Emitter-Base Voltage VEBO -5.0 V
Collector Current IC-100 mA
Peak Collector Current ICM -200 mA
Peak Emitter Current IEM -200 mA
Power Dissipation (Note 1) Pd200 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 625 °C/W
Operating and Storage Temperature Range Tj,T
STG -65 to +150 °C
Marking Code (Note 2)
Type Marking Type Marking
BC856AW K3A BC857CW K3G
BC856BW K3B BC858AW K3J, K3A, K3V
BC857AW K3V, K3A BC858BW K3K, K3B, K3W
BC857BW K3W, K3B BC858CW K3L, K3G
Maximum Ratings @ TA= 25°C unless otherwise specified
Features
·Ideally Suited for Automatic Insertion
·Complementary NPN Types Available
(BC846W-BC848W)
·For Switching and AF Amplifier Applications
·Case: SOT-323, Molded Plastic
·Case material - UL Flammability Rating
Classification 94V-0
·Moisture sensitivity: Level 1 perJ-STD-020A
·Terminals: Solderable per MIL-STD-202, Method
208
·Pin Connections: See Diagram
·Marking Code: See Table Below & Diagram
on Page 2
·Ordering & Date Code Information: See Page 2
·Approx. Weight: 0.006 grams
Mechanical Data
A
M
JL
FD
BC
H
K
G
BE
C
SOT-323
Dim Min Max
A0.25 0.40
B1.15 1.35
C2.00 2.20
D0.65 Nominal
E0.30 0.40
G1.20 1.40
H1.80 2.20
J0.0 0.10
K0.90 1.00
L0.25 0.40
M0.10 0.18
a0°8°
All Dimensions in mm
DS30251 Rev. A-2 2 of 2 BC856AW - BC858CW
Electrical Characteristics
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage (Note 3) BC856
BC857
BC858
V(BR)CBO
-80
-50
-30
—
—
—
—
—
—
VIC= 10mA, IB= 0
Collector-Emitter Breakdown Voltage (Note 3) BC856
BC857
BC858
V(BR)CEO
-65
-45
-30
—
—
—
—
—
—
VIC= 10mA, IB= 0
Emitter-Base Breakdown Voltage (Note 3) V(BR)EBO -5 — — V IE= 1mA, IC= 0
DC Current Gain (Note 3) Current Gain Group A
B
C
hFE
125
220
420
180
290
520
250
475
800
—VCE = -5.0V, IC= -2.0mA
Collector-Emitter Saturation Voltage (Note 3) VCE(SAT) —-75
-250
-300
-650 mV IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5.0mA
Base-Emitter Saturation Voltage (Note 3) VBE(SAT) —
—
-700
-850
—
-950 mV IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5.0mA
Base-Emitter Voltage (Note 3) VBE(ON) -600
—
-650
—
-750
-820 mV VCE = -5.0V, IC= -2.0mA
VCE = -5.0V, IC= -10mA
Collector-Cutoff Current (Note 3) ICBO
ICBO
—
—
—
—
-15
-4.0
nA
µA
VCB = -30V
VCB = -30V, TA= 150°C
Gain Bandwidth Product fT100 200 — MHz VCE = -5.0V, IC= -10mA,
f = 100MHz
Collector-Base Capacitance CCBO —3 4.5pF
VCB = -10V, f = 1.0MHz
Noise Figure NF — — 10 dB
VCE = -5.0V, IC= 200µA,
RS= 2kW, f = 1kHz,
Df = 200Hz
Notes: 3. Short duration pulse test to minimize self-heating effect.
@ TA=25°C unless otherwise specified
XXX = Product Type Marking Code (See Page 1), e.g. K3A = BC856AW
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
XXX
YM
Marking Information
Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
*xx = device type, e.g. BC856AW-7.
Device Packaging Shipping
BC85xxW-7* SOT-323 3000/Tape & Reel
Ordering Information (Note 4)
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
Year 1998 1999 2000 2001 2002 2003 2004
Code JKLM N PR
Date Code Key
