SUPERTEX INC on de Pazzaess ooosa & VN1206 VN1210 Gp Supertex inc. T 3F~oo N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BV oss / Fosiony locon Order Number / Package BVngs (max) (min) TO-39 TO-92 TO-220 120V 62 1.0A VNi206B VN1206L VNi206D 120V 100 1.0A VN1210B VNi210L VNi210D Features Advanced DMOS Technology O Freedom from secondary breakdown These enhancement-mode (normally-off) power transistors util- . . ize a vertical DMOS structure and Supertex's well-proven silicon- 0 Low power drive requirement gate manufacturing process. This combination produces devices O Ease of paralleling with the power handling capabilities of bipolar transistors and with O Lowc d fast switchi the high input impedance and negative temperature coefficient OW Orgs and fast switching speeds inherent in MOS devices. Characteristic of all MOS structures, O Excellent thermal stability these devices are free from thermal runaway and thermally- C1 Integral Source-Drain diode induced secondary breakdown. ah | j \ i Supertex Vertical DMOS Power FETs are ideally suited to a wide 0 High t di id high igh Input impedance and nigh gain . range of switching and amplifying applications where high break- OC Complementary N- and P-Channel devices down voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Package Options (Note 1) O Motor control O Converters O Amplifiers O Switches Power supply circuits O Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) TO-39 TO-92 Absolute Maximum Ratings Drain-to-Source Voltage BVoss Drain-to-Gate Voltage BV ngs Gate-to-Source Voltage +40V Operating and Storage Temperature -55C to +150C Soldering Temperature* 300C. Oct 5 rl if TO-220 YX Note 1: Sea Package Ouiline section for discrete pinouts. *Distance of 1.6 mm from case for 10 seconds.SUPERTEX INC Thermal Characteristics OL DE J are3eqs OOOLLS4 4 i VN1206/VN1210 T-37-0S Package [ (continuows)* Ip (pulsed) Power Dissipation clty octy . TO-39 0.7A 3.0A 6.25W 170 21 TO-92 O1A 0.6A AW 312.5 21.3 TO-220 1.5A 3.0A 45w 80 6.25 lp (continuous) is limited by max rated T Electrical Characteristics (@ 25C unless otherwise specified) (Notes 1 and 2) Symbo! Parameter Min Typ Max Unit Conditions BVpss Breakdown Vellage 4120 v_ | Ip = 100pA, Vag <0 Vasith) Gate Threshold Voltage 0.8 2.0 Vv Vas = Vos, Ip = 1mA less Gate Body Leakage 100 nA | Ves = *15V, Vpg = 0 Ipss Zero Gate Voltage Drain Current 10 Vas = 0. Vpg = 120V BA | Vas = 9, Vps = 120V 500 Ta = 125C ID(ON) ON-State Drain Current 1.0 A Ves = l0V. Vps = 2 Voson) RDS(ON) Static Drain-to-Source ALL 10 Vas = 2.5V, Ip = OA ON-State Resistance VNi206 Q Vag = 10V, ip = 05A VN1210 10 Ip = 0.5A, V@g = 10V GrFs Forward Transconductance 300 mU_ | Vps 2 2 Vog(on}. Ip = 0.54 Ciss Input Capacitance 125 Coss Common Source Output Capacitance 50 pF 1 Vas = 0, Vos = 25V Crss Reverse Transfer Capacitance 20 = 1MHz ON) Turn-ON Time i ns VDD = 60V, Ip = 0.1A OFF) Turn-OFF Time 57 Rg = 500 Vsp Diode Forward Voltage Drop VN1210 -1.2 Vv Isp = .12A, Vag = 0 VN1206 ~1.2 Vv disp = -.25A, Vag = 0 Note 1: All D.C. parameters 100% tested at 25C untess otherwise stated. (Pulse test: 3001s pulse, 2% duty cycle.) Note 2: All A.C. parameters sample tested. Switching Waveforms and Test Circuit INPUT A | : ' fON) ; (OFFI a b> t } : : tdtOND ver | ItdHlOFF) tf bq t ' OUTPUT J SCOPE D.U.T. 8-90 UY SAN faa nt yea Ten ee