2SK972 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source * Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220AB D 1 2 3 1. Gate 2. Drain (Flange) 3. Source G S 2SK972 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 20 V Drain current ID 25 A 100 A 25 A 50 W Drain peak current ID(pulse)* Body to drain diode reverse drain current IDR 2 1 Channel dissipation Pch* Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Notes 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C 2 2SK972 Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 60 -- -- V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 20 -- -- V IG = 100 A, VDS = 0 Gate to source leak current IGSS -- -- 10 A VGS = 16 V, VDS = 0 Zero gate voltage drain current IDSS -- -- 250 A VDS = 50 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 -- 2.0 V ID = 1 mA, VDS = 10 V Static drain to source on state resistance RDS(on) -- 0.033 0.04 ID = 15 A, VGS = 10 V * 0.05 0.06 ID = 15 A, VGS = 4 V * 1 Forward transfer admittance |yfs| 12 20 -- S ID = 15 A, VDS = 10 V * Input capacitance Ciss -- 1400 -- pF VDS = 10 V, VGS = 0, f = 1 MHz Output capacitance Coss -- 720 -- pF Reverse transfer capacitance Crss -- 220 -- pF Turn-on delay time td(on) -- 15 -- ns Rise time tr -- 130 -- ns Turn-off delay time td(off) -- 270 -- ns Fall time tf -- 180 -- ns Body to drain diode forward voltage VDF -- 1.3 -- V IF = 25 A, VGS = 0 Body to drain diode reverse recovery time trr -- 135 -- ns IF = 25 A, VGS = 0, diF/dt = 50 A/s Note 1 1 ID = 15 A, VGS = 10 V, RL = 2 1. Pulse test 3 2SK972 Maximum Safe Operation Area Power vs. Temperature Derating 500 300 10 Drain Current ID (A) 40 ar ea ) (o n S pe ra tio n = 25 C ) 0.3 1.0 3 10 30 100 Drain to Source Voltage VDS (V) Typical Transfer Characteristics 50 75C 4.5 V VDS = 10 V Pulse Test 40 4.0 V Pulse Test 30 (T Ta = 25C 0.5 0.1 150 3.5 V 20 3.0 V Drain Current ID (A) 8V 6V O s s ) ot 10 V C C Typical Output Characteristics 50 D Sh 50 100 Case Temperature TC (C) 0 3 1.0 0 10 10 s (1 m s 1 0m 1 = 20 30 O lim pe ite rat d ion by in R th is D 40 100 PW Drain Current ID (A) is Channel Dissipation Pch (W) 60 10 TC= 25C -25C 30 20 10 VGS = 2.5 V 0 0 2 4 6 8 10 Drain to Source Voltage VDS (V) 1 2 3 4 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage VDS (on) (V) Pulse Test 4 3 ID = 50 A 2 1 0 20 A 10 A 2 4 6 8 10 Gate to Source Voltage VGS (V) Static Drain to Source on Static Resistance RDS (on) () Drain to Source Saturation Voltage vs. Gate to Source Voltage 5 Static Drain to Source on State Resistance vs. Drain Current 0.5 Pulse Test 0.2 VGS = 4 V 0.1 0.05 10 V 0.02 0.01 0.005 2 1 Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) () 4 Pulse Test ID = 20 A 0.08 0.06 10 A VGS = 4 V 20 A 5 A 10 A 0.04 5A 0.02 0 -40 VGS = 10 V 0 40 80 120 Case Temperature TC (C) 5 10 20 50 Drain Current ID (A) 100 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature 0.10 5 160 100 50 VDS = 10 V Pulse Test -25C TC = 25C 20 10 75C 5 2 1 0.5 1.0 2 10 20 5 Drain Current ID (A) 50 2SK972 Typical Capacitance vs. Drain to Source Voltage Body to Diode Reverse Recovery Time 10,000 di/dt = 50 A/s, Ta = 25C VGS = 0 Pulse Test 500 VGS = 0 f = 1 MHz 3,000 Capacitance C (pF) Reverse Recovery Time trr (ns) 1,000 200 100 50 Ciss 1,000 Coss 300 Crss 100 30 20 10 0.5 10 2 1.0 5 10 20 Reverse Drain Current IDR (A) 50 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Switching Characteristics Dynamic Input Characteristics 16 10 V 60 VGS VDS 40 0 12 8 VDD = 50 V 25 V 10 V 4 ID = 25 A 20 40 60 80 Gate Charge Qg (nc) 0 100 Switching Time t (ns) 25 V 80 20 1000 20 VDD = 50 V Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) 100 500 td (off) 200 tf 100 tr 50 VGS = 10 V VDD = 30 V PW = 2s, duty < 1 % * * 20 10 0.5 td (on) 1.0 2 5 10 20 Drain Current ID (A) 50 5 2SK972 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 50 Pulse Test 40 10 V 15 V 30 20 5V 10 0.8 0.4 1.2 2.0 1.6 Source to Drain Voltage VSD (V) 0 Normalized Transient Thermal Impedance S (t) VGS = 0, -5 V Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25C D=1 1.0 0.5 0.3 0.2 0.1 0.05 0.02 ch-c(t) = S (t) * ch-c ch-c = 2.5C/W, TC = 25C 0.1 PDM lse 1 0.0 ot Pu h 1S 0.03 0.01 10 T 100 1m 10 m Pulse Width PW (s) D = PW T PW 100 m 1 10 Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T RL Vin Vout 10 % 10 % 10 % 50 Vin = 10 V 6 . 30 V VDD = . td (on) 90 % tr 90 % td (off) tf 2SK972 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 7