Rev 0.2 / Dec. 2003 5
HY62KF16403E Series
256Kx16bit full CMOS SRAM
ORDERING INFORMATION
Note 1) I : Industrial -40 ~ 85 oC
ABSOLUTE MAXIMUM RATING1)
Note1) Stresses greater than th os e li sted under ABSOLUTE MAXIMU M RATINGS may cause permanent damage to th e devi ce. Th is is
stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation
of this specification is not implied.
Exposure to the absolute maximum rati ng conditions for ext ended period may affect reliability.
TRUTH TABLE
Note 1). H=VIH, L=VIL, X=Don't Care(VIL or VIH)
2). UB, LB(Upper, Lower Byte enable)
These active LOW inputs allow individual bytes to be written or read.
When LB is LOW, data is written or read to the lower byte, I/O1 - I /O 8.
When UB is LOW, data is written or read to the upper byte, I/O9 - I/O16.
Part Number Speed Power Temparature Package
HY62KF16403E-SD(I) 55/70 SL-Part I1) TSOP-II
HY62KF16403E-DD(I) 55/70 LL-Part I1) TSOP-II
Parameter Symbol Rating Unit
Input/Output Voltage VIN, VOUT -0.3 to VCC+0.3V V
Power Supply VDD -0.3 to 4.0 V
Ambient Temperature TA-40 to 85 oC
Storage Temperature TSTG -55 to 150 oC
Power Dissipation PD1.0 W
Ball Soldering Temperature & Time TSOLDER 260 . 10 oC . Sec
MODE CS WE OE LB UB I/O POWER
I/O1 ~ I/O8 I/O9 ~ I/O16
Deselected H X X X X High-Z High-Z Standby
Output Disabled L X X H H High-Z High-Z Active
L H H X X High-Z High-Z
Read L H L LHD
OUT High-Z Active HLHigh-Z D
OUT
LLDOUT DOUT
Write L L X LHD
IN High-Z Active HLHigh-Z D
IN
LLDIN DIN