ee Discrete POWER & Signal -AIRCHILA Technologies SE MICO T ORS x MPSA56 MMBTA56 PZTA56 SOT-23 B SOT-223 Mark: 2G PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. Absol ute Maxi mum Rati ngs* TA = 25C unless otherwise noted 9SV.1LZd / 9SVLEININ / 9SVSdIN Symbol Parameter Value Units Voes Collector-Emitter Voltage 80 Vv Vcso Collector- Base Voltage 80 Vv VeBo Emitter-Base Voltage 40 Vv Io Collector Current - Continuous 500 mA Ty, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units MPSA56 *MMBTA56 *PZTA56 Pp Total Device Dissipation 625 350 1,000 mw Derate above 25C 5.0 28 8.0 mWw/C Resc Thermal Resistance, Junction to Case 83.3 C/AV Rosa Thermal Resistance, Junction to Ambient 200 357 125 C/W * Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 om?, 1997 Fairchild Semiconductor CorporationElectrical Characteristics PNP General Purpose Amplifier TA = 25C unless otherwise noted (continued) Symbol Parameter Test Conditions Min Max | Units OFF CHARACTERISTICS VipR)ceo Collector-Emitter Breakdown Voltage | Ic = 1.0 mA, lz =0 80 Vv Vieryceo Collector- Base Breakdown Voltage lo = 100 LA, Ie = 0 80 Vv VieR)EBO Emitter-Base Breakdown Voltage le = 100 pA, Ic = 0 4.0 Vv Ice Collector- Cutoff Current Vee = 60 V, Ip =0 0.1 HA leso Collector- Cutoff Current Ves = 80 V, le=0 0.1 HA ON CHARACTERISTICS Hee DC Current Gain lo=10mMA, Voce = 1.0 V 100 lo = 100 mA, Vce = 1.0 V 100 Voetsat) Collector- Emitter Saturation Voltage lc = 100 mA, Is = 10 mA 0.25 Vv Vee(on) Base-Emitter On Voltage lo = 100 mA, Vce = 1.0 V 1.2 Vv SMALL SIGNAL CHARACTERISTICS f Current Gain - Bandwidth Product lo = 100 mA, Voce = 1.0 V, 50 MHz f= 100 MHz *Pulse Test: Pulse Width < 300 ys, Duty Cycle < 2.0% Spice Model PNP (ls=12.27p Xti=3 Eg=1.11 Vaf=100 Bf=91.63 Ne=1.531 Ise=12.27p Ikf=1.009 Xtb=1.5 Br=1.287 Nc=2 Isc=O Ikr=0 Ro=.6 Cjo=48.28p Mjc=.5615 Vjc=.75 Fe=.5 Cje=106.7p Mje=.5168 Vje=.75 Tr=496.3n Tf=865.8p Itf=.2 Vtf=2 Xtf=.8 Rb=10) Typical Characteristics 300 250 200 - TYPICAL PULSED CURRENT GAIN a Oo @ OQ oO oO E u 0.001 h Typical Pulsed Current Gain vs Collector Current Vo E =1V 0.01 0.1 I. - COLLECTOR CURRENT (A) Collector-Emitter Saturation B =10 Voesar> COLLECTOR EMITTER VOLTAGE (V) 125C 100 Ic- COLLECTOR CURRENT (mA) Voltage vs Collector Current 9SV.1LZd / 9SVLEININ / 9SVSdINPNP General Purpose Amplifier (continued) Typical Characteristics (continued) Base-Emitter Saturation Voltage vs Collector Current io B =10 o o 0.6 Veegar BASE EMITTER VOLTAGE (V) S Qo 100 1000 I- COLLECTOR CURRENT (mA) Collector-Cutoff Current vs. Ambient Temperature Vor = 60Vz cao COLLECTOR CURRENT (nA) 25 50 76 100 125 T,- AMBIENT TEMPERATURE (C) Input and Output Capacitance vs Reverse Voltage f=1.0 MHz CAPACITANCE (pF) 0.1 1 10 100 Vice - COLLECTOR VOLTAGE(V) o 2S 2 28 = yb FB OD @8 = DN Vpeqn - BASE EMITTER ON VOLTAGE (V) B 3 Voge- COLLECTOR-EMITTER VOLTAGE (V) ny wo 3 8 wo b 3 o fo 1 f.- GAIN BANDWIDTH PRODUCT (MHz) ny Base Emitter ON Voltage vs Collector Current Vop=iv 1 10 100 1000 I,.: COLLECTOR CURRENT (mA) Collector Saturation Region 10 mA 100 mA 5000 10000 20000 30000 50000 1g: BASE CURRENT (uA) Gain Bandwidth Product vs Collector Current Voge =5V. 10 20 50 100 | - COLLECTOR CURRENT (mA) 9SV.1LZd / 9SVLEININ / 9SVSdINPNP General Purpose Amplifier (continued) Typical Characteristics (continued) Power Dissipation vs Ambient Temperature SOT-223 0.75 a Pa- POWER DISSIPATION (W) iy a 0 25 50 75 100 TEMPERATURE (C) 125 150 9SV.1LZd / 9SVLEININ / 9SVSdIN