BAS16XV2T5G - ON Semiconductor

October, 2011 − Rev. 6

1Publication Order Number:

BAS16XV2T1/D

BAS16XV2T1,

BAS16XV2T5,

SBAS16XV2T1G

Switching Diode

Features

•High−Speed Switching Applications

•Lead Finish: 100% Matte Sn (Tin)

•Qualified Reflow Temperature: 260°C

•Extremely Small SOD−523 Package

•AEC−Q101 Qualified and PPAP Capable

•S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements

•Pb−Free Packages are Available

MAXIMUM RATINGS

Rating Symbol Value Unit

Continuous Reverse Voltage VR75 V

Continuous Forward Current IF200 mA

Peak Forward Surge Current IFM(surge) 500 mA

Repetitive Peak Forward Current IFRM 500 mA

Non−Repetitive Peak Forward Current

(Square Wave, TJ = 25°C prior to surge)

t = 1 ms

t = 1 s

IFSM

4.0

1.0

0.5

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings

are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation, (Note 1)

TA = 25°C

Derate above 25°C

PD200

1.57

mW/°C

Thermal Resistance, Junction−to−Ambient RθJA 635 °C/W

Junction and Storage Temperature TJ, Tstg −55 to 150 °C

1. FR-5 Minimum Pad.

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CATHODE

ANODE

Device Package Shipping†

ORDERING INFORMATION

BAS16XV2T1 SOD−523 3000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

SOD−523

CASE 502

PLASTIC

A6 = Specific Device Code

M = Date Code

G= Pb−Free Package

MARKING

DIAGRAM

A6 MG

BAS16XV2T1G SOD−523

(Pb−Free)

3000 / Tape & Reel

BAS16XV2T5G SOD−523

(Pb−Free)

8000 / Tape & Reel

(Note: Microdot may be in either location)

SBAS16XV2T1G SOD−523

(Pb−Free)

3000 /T ape & Reel

BAS16XV2T1, BAS16XV2T5, SBAS16XV2T1G

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Reverse Voltage Leakage Current

(VR = 75 V)

(VR = 75 V, TJ = 150°C)

(VR = 25 V, TJ = 150°C)

−

1.0

Reverse Breakdown Voltage

(IBR = 100 mA)

V(BR) 75 −V

Forward Voltage

(IF = 1.0 mA)

(IF = 10 mA)

(IF = 50 mA)

(IF = 150 mA)

−

715

855

1000

1250

Diode Capacitance (VR = 0, f = 1.0 MHz) CD−2.0 pF

Forward Recovery Voltage

(IF = 10 mA, tr = 20 ns)

VFR −1.75 V

Reverse Recovery Time

(IF = IR = 10 mA, RL = 50 Ω)

trr −6.0 ns

Stored Charge

(IF = 10mA to VR = 5.0V, RL = 500 Ω)

QS−45 pC

Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp » trr

+10 V 2.0 k

820 Ω

0.1 μF

D.U.T.

100 μH

0.1 μF

50 Ω OUTPUT

PULSE

GENERATOR

50 Ω INPUT

SAMPLING

OSCILLOSCOPE

trtpt

10%

90%

trr t

iR(REC) = 1.0 mA

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at iR(REC) = 1.0 mA)

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

BAS16XV2T1, BAS16XV2T5, SBAS16XV2T1G

http://onsemi.com

100

0.2 0.4

VF, FORWARD VOLTAGE (VOLTS)

0.6 0.8 1.0 1.2

1.0

0.1

TA = 85°C

VR, REVERSE VOLTAGE (VOLTS)

1.0

0.1

0.01

0.001

10 20 30 40 50

0.68

VR, REVERSE VOLTAGE (VOLTS)

0.64

0.60

0.56

0.52

CD, DIODE CAPACITANCE (pF)

2468

IF, FORWARD CURRENT (mA)

Figure 2. Forward Voltage Figure 3. Leakage Current

Figure 4. Capacitance

TA = -40°C

TA = 25°C

TA = 150°C

TA = 125°C

TA = 85°C

TA = 55°C

TA = 25°C

IR, REVERSE CURRENT (μA)

BAS16XV2T1, BAS16XV2T5, SBAS16XV2T1G

http://onsemi.com

PACKAGE DIMENSIONS

SOD−523

CASE 502−01

ISSUE E

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.

MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PRO-

TRUSIONS, OR GATE BURRS.

−X−

−Y−

b2X

0.08 X Y

DIM MIN NOM MAX

MILLIMETERS

D1.10 1.20 1.30

E0.70 0.80 0.90

A0.50 0.60 0.70

b0.25 0.30 0.35

c0.07 0.14 0.20

L0.30 REF

H1.50 1.60 1.70

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

RECOMMENDED

TOP VIEW

SIDE VIEW

BOTTOM VIEW

2X 2X

0.48

0.40

1.80

DIMENSION: MILLIMETERS

PACKAGE

OUTLINE

L2 0.15 0.20 0.25

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

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Phone: 81−3−5817−1050

BAS16XV2T1/D

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