DMA50P1200HR
1 2 3
Phase leg
Standard Rectifier
Part number
DMA50P1200HR
Backside: isolated
FAV
F
V V1.28
RRM
50
1200
=
V=V
I=A
2x
Features / Advantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
● High commutation robustness
● High surge capability
● Diode for main rectification
● For single and three phase
bridge configurations
ISO247
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Soldering pins for PCB mounting
● Backside: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
3600
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms and Conditions of Usage
IXYS reserves the right to change limits, conditions and dimensions. 20170721cData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
DMA50P1200HR
V = V
kA²s
kA²s
kA²s
kA²s
Symbol
Definition
Ratings
typ.
max.
I
R
V
IA
V
F
1.31
R0.7 K/W
R
min.
50
V
RSM
V
40T = 25°C
VJ
T = °C
VJ
mA1.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
105
P
tot
210 WT = 25°C
C
RK/W
50
1200
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Conditions
Unit
1.64
T = 25°C
VJ
150
V
F0
V0.82T = °C
VJ
175
r
F
9mΩ
V1.28T = °C
VJ
I = A
F
V
50
1.70
I = A
F
100
I = A
F
100
threshold voltage
slope resistance for power loss calculation only
µA
150
V
RRM
V1200
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
18
junction capacitance
V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
175
650
700
1.54
1.48
A
A
A
A
555
595
2.12
2.04
1200
FAV
180° sine
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1300
0.25
IXYS reserves the right to change limits, conditions and dimensions. 20170721cData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
DMA50P1200HR
Ratings
000000
YYWWZ
Logo
Part Number
DateCode
Assembly Code
abcdef
Product Marking
Assembly Line
D
M
A
50
P
1200
HR
Part description
Diode
Standard Rectifier
(up to 1800V)
Phase leg
ISO247 (3)
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm1.2
mounting torque
0.8
T
VJ
°C175
virtual junction temperature
-55
Weight g6
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
Unit
F
C
N120
mounting force with clip
20
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
2.7
4.1
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
70 A
per terminal
150-55
terminal to terminal
ISO247
Similar Part Package Voltage class
DMA50P1200HB TO-247AD (3) 1200
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
DMA50P1200HR 512335Tube 30DMA50P1200HRStandard
3600
ISOL
T
stg
°C150
storage temperature
-55
3000
threshold voltage
V0.82
mΩ
V
0 max
R
0 max
slope resistance *
6.4
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Rectifier
175 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20170721cData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
DMA50P1200HR
S
Ø
P2x D3
D1
E1
4
1 2 3
L
L1
2x
b2
3x
b
b4
2x
e
2x
E2
D
E
Q
A
A2
A1
C
D2
2x
E3
A3
min max min max
A 4.70 5.30 0.185 0.209
A1 2.21 2.59 0.087 0.102
A2 1.50 2.49 0.059 0.098
A3 typ. 0.05 typ. 0.002
b 0.99 1.40 0.039 0.055
b2 1.65 2.39 0.065 0.094
b4 2.59 3.43 0.102 0.135
c 0.38 0.89 0.015 0.035
D 20.79 21.45 0.819 0.844
D1 typ. 8.90 typ. 0.350
D2 typ. 2.90 typ. 0.114
D3 typ. 1.00 typ. 0.039
E 15.49 16.24 0.610 0.639
E1 typ. 13.45 typ. 0.530
E2 4.31 5.48 0.170 0.216
E3 typ. 4.00 typ. 0.157
e 5.46 BSC 0.215 BSC
L 19.80 20.30 0.780 0.799
L1 - 4.49 - 0.177
Ø P 3.55 3.65 0.140 0.144
Q 5.38 6.19 0.212 0.244
S 6.14 BSC 0.242 BSC
Dim.
Millimeter Inches
1 2 3
Outlines ISO247
IXYS reserves the right to change limits, conditions and dimensions. 20170721cData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
DMA50P1200HR
0.001 0.01 0.1 1
200
250
300
350
400
450
500
5
5
0
2 3 4 5 6 7 8 9 011
10
2
10
3
10
4
0.0 0.5 1.0 1.5 2.0
0
20
40
60
80
0 20 40 60
0
20
40
60
80
100
1 10 100 1000 10000
0.0
0.2
0.4
0.6
0.8
0 50 100 150 200
0
20
40
60
80
I
F
[
A]
V
F
[V]
I
FSM
[A]
t [s]
I
2
t
[A
2
s]
t [ms]
P
tot
[
W]
I
F(AV)M
[A] T
amb
[°C]
I
F(AV)M
[A]
T
C
[°C]
Z
thJC
[K/W]
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
versus time per diode
Fig. 3 I
2
t versus time per diode
Fig. 4 Power dissipation versusdirect output current
and ambient temperature per diode
Fig. 5 Max. forward current vs.
case temperature per diode
Fig. 6 Transient thermal impedance junction to case versus time per diode
t [ms]
Constants for Z
thJC
calculation:
i R
thi
(K/W) t
i
(s)
1 0.06 0.0004
2 0.12 0.0100
3 0.20 0.0240
4 0.20 0.1000
5 0.12 0.4500
0 50 100 150
50 Hz, 80%V
RRM
T
VJ
= 45°C T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150°C T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 150°C
DC =
1
0.5
0.4
0.33
0.17
0.08
DC =
1
0.5
0.4
0.33
0.17
0.08
R
thHA
[K/W]
0.6
0.8
1.0
2.0
4.0
8.0
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20170721cData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
